41 112 TKIM TC-00002744/O1007 TIIM TC-00000930/40407QB TIIM TC-00000630/22107QB TIIM TC-00000371 No. A0555-1/7
O1712 TKIM TC-00002824
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
July, 2013
2SK4087LS
N-Channel Power MOSFET
600V, 14A, 610mΩ, TO-220F-3FS
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
• ON-resistance RDS(on)=0.47Ω (typ.) • Input capacitance Ciss=1200pF (typ.)
• 10V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 600 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) IDc *1
Limited only by maximum temperature Tch=150°C
14 A
IDpack *2
Tc=25°C (Our ideal heat dissipation condition)*3
9.2 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 52 A
Allowable Power Dissipation PD2.0 W
Tc=25°C (Our ideal heat dissipation condition)*3
40 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *4 EAS 106 mJ
Avalanche Current *5 IAV 14 A
*1 Shows chip capability.
*2 Package limited.
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=1mH, IAV=14A (Fig.1)
*5 L≤1mH, Single pulse
Package Dimensions
unit : mm (typ)
7528-001
Ordering number : ENA0555E
Product & Package Information
• Package : TO-220F-3FS
• JEITA, JEDEC : SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking Electrical Connection
1
3
2
K4087
LOT No.
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
10.16
0.8
15.8712.98
3.3
6.68
3.23
1.47 MAX
15.8
4.7 2.54
2.76
123 0.5
2.54 2.54
3.18
2SK4087LS-1E
2SK4087LS
No. A0555-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 600 V
Zero-Gate Voltage Drain Current IDSS V
DS=480V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V
Forward Transfer Admittance | yfs | VDS=10V, ID=7A 4 8 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=7A, VGS=10V 0.47 0.61 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 1200 pF
Output Capacitance Coss 220 pF
Reverse Transfer Capacitance Crss 50 pF
Turn-ON Delay Time td(on)
See Fig.2
27 ns
Rise Time tr 72 ns
Turn-OFF Delay Time td(off) 144 ns
Fall Time tf48 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=14A 46 nC
Gate-to-Source Charge Qgs 8.6 nC
Gate-to-Drain “Miller” Charge Qgd 26.4 nC
Diode Forward Voltage VSD IS=14A, VGS=0V 0.95 1.3 V
Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SK4087LS-1E TO-220F-3FS 50pcs./magazine Pb Free
50Ω
≥50Ω
RG
VDD
L
10V
0V
2SK4087LS
PW≤10μs
D.C.≤1%
P.G 50Ω
ID=7A
RL=28Ω
VDD=200V
VOUT
2SK4087LS
VIN
10V
0V
VIN
G
S
D
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
IT11753 Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
IT11754
0
0
30
35
25
20
15
10 3052515 20
10
5
0
40
30
35
25
20
15
10
5
020181641221068 14
15V
10V
Tc=25°CVDS=20V
VGS=5V
6V
Tc= --25°C
25°C
75°C
8V
2SK4087LS
No. A0555-3/7
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
IT11755 Case Temperature, Tc -- °C
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
IT11756
--50 --25 0 25 50 75 100 125 150
0
1.4
0.4
1.0
0.6
0.2
1.2
0.8
IT11758
0.2 0.4 0.6 0.8 1.41.21.0
0.01
0.1
10
7
5
3
2
5
3
2
7
5
3
2
2
1.0
7
5
3
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD
Drain Current, ID -- A IT11757
Forward T ransfer Admittance, | yfs | -- S
| yfs | -- ID
25°C
--25
°
C
Tc=75°C
0.1 23 57 23
1.0 23 5 5710
1.0
10
2
3
5
7
5
7
3
2
3VDS=10V
Ô
Tc= --25°C
Ô
75
°
C
VGS=0V
3
0
2.0
1.8
1.0
1.4
151359711
0.6
0.2
1.2
1.6
0.8
0.4
ID=7A
Tc=75°C
25°C
--25°C
ID=7A, VGS=10V
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
IT11759
10
100
3
2
2
5
7
1000
3
5
7
0.1 1.0
23 5 23 572 10
357
VDD=200V
VGS=10V
td(off)
tr
tf
Ô
td(on)
0
7
100
10
1000
5
3
2
7
5
3
2
10000
7
5
3
2
505 2535451510 30 4020
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
IT11760
f=1MHz
Ô
Ciss
Ô
Coss
Ô
Crss
25
°
C
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
2
3
5
7
2
0.1
3
5
7
2
1.0
3
5
7
2
10
3
5
7
100
0.01 23 57 2
1.0 10 35
7
IT16815
IT11761
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
0
0
1
2
3
4
5
6
7
8
5040
10
9
10 20 30
VDS=200V
ID=14A
2
100 357
1000
IDP=52A
(PW
≤
10
μ
s)
IDc(
*
1)=14A
Operation in this area
is limited by RDS(on).
IDpack(*2)=9.2A
10μs
100μs
DC operation
1ms
10ms
100ms
Tc=25°C
Single pulse *1. Shows chip capability
*2.
Our ideal heat dissipation condition
2SK4087LS
No. A0555-4/7
0
020 40
5
10
60
20
15
80 100 120
25
35
30
40
45
140 160
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT11742IT11730 Case Temperature, Tc -- °C
PD -- Tc
Allowable Power Dissipation, PD -- W
0
020 40
1.0
0.5
60
2.0
1.5
80 100 120
2.5
140 160
0
025 50 75 100 125 150
100
80
60
20
40
120
175
EAS -- Ta
IT10478
Ambient Temperature, Ta -- °C
Avalanche Energy derating factor -- %
2SK4087LS
No. A0555-5/7
Magazine Specifi cation
2SK4087LS-1E
2SK4087LS
No. A0555-6/7
Outline Drawing
2SK4087LS-1E
Mass (g) Unit
1.8
* For reference
mm
2SK4087LS
PS No. A0555-7/7
Note on usage : Since the 2SK4087LS is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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