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Is Now Part of
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1
August 2008
PACKAGE DIMENSIONS
QED121, QED122, QED123
Plastic Infrared Light Emitting Diode
Features
■
λ
= 880nm
■
Chip material = AlGaAs
■
Package type: T-1 3/4 (5mm lens diameter)
■
Matched photosensor: QSD122/QSD123/QSD124
■
Narrow emission angle, 16°
■
High output power
■
Package material and color: clear, peach tinted, plastic
Description
The QED121, QED122 and QED123 are 880nm
AlGaAs LEDs encapsulated in a clear peach tinted,
plastic T-1 3/4 package.
Package Dimensions
ANODE
CATHODE
0.195 (4.95)
0.040 (1.02)
NOM
0.100 (2.54)
NOM
0.050
(1.25)
0.800 (20.3)
MIN
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
CATHODE
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
Schematic
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1 2
QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly 2.67mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
(T
A
= 25°C)
Symbol Parameter Rating Units
T
OPR
Operating Temperature -40 to +100 °C
T
STG
Storage Temperature -40 to +100 °C
T
SOL-I
Soldering Temperature (Iron)
(2)(3)(4)
240 for 5 sec °C
T
SOL-F
Soldering Temperature (Flow)
(2)(3)
260 for 10 sec °C
I
F
Continuous Forward Current 100 mA
V
R
Re verse Voltage 5 V
P
D
Power Dissipation
(1)
200 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
PE
Peak Emission Wavelength I
F
= 20mA 890 nm
TC
λ
Temperature Coefficient 0.2 nm
/
°C
2
Θ
1
/2 Emission Angle I
F
= 100mA 16 °
V
F
Forward Voltage I
F
= 100mA, tp = 20ms 1.7 V
TC
VF
Temperature Coefficient -6 mV
/
°C
I
R
Reverse Current V
R
= 5V 10 µA
I
E
Radiant Intensity QED121 I
F
= 100mA, tp = 20ms 16 40 mW/sr
I
E
Radiant Intensity QED122 I
F
= 100mA, tp = 20ms 32 100 mW/sr
I
E
Radiant Intensity QED123 I
F
= 100mA, tp = 20ms 50 70 mW/sr
TC
IE
Temperature Coefficient -0.3 %
/
°C
t
r
Rise Time I
F
= 100mA 900 ns
t
f
Fall Time 800 ns
C
j
Junction Capacitance V
R
= 0V 11 pF
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1 3
QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
Figure 3. Normalized Radiant Intensity vs. Forward Current
IF – FORWARD CURRENT (mA)
Ie – NORMALIZED RADIANT INTENSITY
10010 1000
10
1
0.1
Normalized to:
I
F
= 100mA Pulsed
t
PW
= 20mS
Duty Cycle = 4%
T
A
= 25°C
TA – AMBIENT TEMPERTURE (°C)
Figure 6. Forward Voltage vs. Ambient Temperature
Figure 1. Normalized Intensity vs. Wavelength
VF – FORWARD VOLTAGE (V)
2.1
2.0
1.9
1.8
1.7
1.6
1.5
VF – FORWARD VOLTAGE (V)
5.0
4.0
3.0
2.0
1.0
0.0
λ (nm)
NORMALIZED INTENSITY
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0700 750 800 850 900 950 1,000 1,050
I
F
= 20mA Pulsed
t
PW
= 20mS
Duty Cycle = 4%
Figure 5. Forward Voltage vs. Forward Current
IF – FORWARD CURRENT (mA)
10010 1000
I
F
Pulsed
t
PW
= 20mS
Duty Cycle = 4%
T
A
= 25°C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
TA – AMBIENT TEMPERTURE (°C)
Figure 2. Peak Wavelength vs. Ambient Temperature
λPE – PEAK EMISSION WAVELENGTH
010203040506070
910
908
906
904
902
900
898
896
894 80 90 100
I
F
= 20mA DC
TA – AMBIENT TEMPERTURE (°C)
Figure 4. Normalized Radient Intensity vs. Ambient Temperature
Ie – NORMALIZED RADIANT INTENSITY
-15 0 15 30 45 60 75 90 105
-15 0 15 30 45 60 75 90 105
Normalized to:
I
F
= 20mA Pulsed
t
PW
= 20mS
Duty Cycle = 4%
T
A
= 25°C
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1 4
QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
(Continued)
Figure 8. Coupling Characteristics of QED12X and QSD12X
LENS TIP SEPARATION (inches)
IC (ON) – NORMALIZED COLLECTOR CURRENT
0123456
1.0
0.8
0.6
0.4
0.2
0.0
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
150°
160°
170°
180°
I
F
= 20mA
I
F
= 100mA
Figure 7. Radiation Diagram
0.00.20.40.60.81.0 0.2 0.4 0.6 0.8 1.0
Normalized to:
d = 0 inch
Pulse Width = 100µs
Duty Cycle = 0.1%
V
CC
= 5V
R
L
= 100Ω
T
A
= 25°C
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1 5
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,andis not
intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter®*
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
ThePower Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
*EZSWITCH™ and FlashWriter®are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicalandproduct information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Ful
First Production
lProduction Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The
datasheet is for reference information only.
Rev. I36
QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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