@@ 6653931 0025751 cOb MBAPX N AMER PHILIPS/DISCRETE b?E | L BZV90 SERIES SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, in a SOT 223 plastic envelope, intended for stabilization applica- tions in thick and thin-film circuits. The series covers the normalized range of nominal working voltages from 2.4 V to 75 V with a tolerance of + 5% (international standard E24 range). QUICK REFERENCE DATA Working voltage range Working voltage tolerance (E24 range) Total power dissipation up to Tamp = 25 OC Junction temperature Vz nom. Prot max Tj max 2.4to 75 V +5 % 1.3 Ww 150 C MECHANICAL DATA Dimensions in mm Fig.1 SOT223. Pinning 1 = anode bos mm 2 = cathode (oso ' 3 3 = anode 4 = cathode I seating plane [Glo 3[s] 67 63 tr 35 2-4 mear67 28 {=[02@]A] I ; 4 | 1 | | 33 by eo8_| | | max, + j il 1 i 2 | 3 |gq-! ose.) | Lcororas) a | ) MSAQ35 1 October 1993 1709| 6653931 0025752 14e MAPX BZV90 SERIES N AMER PHILIPS/DISCRETE bh7E D N RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Repetitive peak forward current lFRM max, 400 mA Average forward current (averaged over any 20 ms period) lFIAV) max. 400 mA Working current (DC) Iz limited by Ptot max Total power dissipation Up to Tamb = 25 PC (note 1) Prot max. 1.3 W Non-repetitive peak reverse power dissipation Tj = 25 C; th = 100 us Pzsm max. 40 W Storage temperature range Tstg 65 to +150 C Junction temperature Tj max. 150 C THERMAL RESISTANCE From junction to ambient in free air (note 1) Rth j-a = 95 K/W CHARACTERISTICS 7, = 25 C Forward voltage Ip =50 mA VE max, 1.0 v Reverse current BZV90- C2V4 VR=alv IR max. 50 pA C2V7 VR=1lV IR max. 20 pA C3Vv0 VR=tV IR max. 10 uA C3V3 VR=lV IR max. 5 uA C3V6 Va=l1V IR max, 5 pA C3Vv9 VrR=l1V ir max. 3 uA C4V3 Vp=iV IR max. 3 pA C4V7 VR=2V ip max, 3 pA C5V1 VR=2Vv 'R max, 2 pA C5V6 VR=2V ip max, 1 pA C6V2 VRa4v IR max, 3 yA C6V8 VR=4V IR max. 2 uA C7V5 VRa=5V IR max, 1 pA C8V2 VR=5V Ip max. 700 nA cov VR=6V IR max. 500 nA c10 VRaa7V IR max. 200 nA C11 to C13 Va =8V IR max. 100 nA C15 to C75 VR =0,7 V2nom in max. 50 nA Note 1, Device mounted on an epoxy printed circuit board: 40 mm x 40 mm x 1.5 mm; mounting pad for the cathode lead min. 6 cm?. 1710 October 1993MH 6653931 0025753 089 MAPX Silicon planar voltage regulator diodes BZV90 SERIES N AMER PHILIPS/DISCRETE b7E D Tj = 25C E24 logarithmic range (tolerance + 5%) BZV90-...|. working voltage differential temperature coefficient diode capacitance resistance Vz (V) Taift (Q) Sz (mV/K) Cq(pF); f = 1 MHz at IZtest =5mA at \7test =5mA at IZtest =5mA VR =0 min. max. | typ. max. | min, typ. max. typ. max. C2V4 2,2 2,6 70 100 3,5 1,6 0 375 450 C2V7 25 2,9 75 100 3,5 2,0 0 350 450 C3V0 2,8 3,2 80 95 3,5 2,1 0 350 450 C3V3 3,1 3,5 85 95 3,5 2,4 0 325 450 C3V6 3,4 3,8 85 90 3,5 2,4 0 300 450 C3V9 3,7 4,1 85 90 3,5 2,5 0 300 450 C4V3 40 46 80 90 3,5 2,5 0 275 450 C4V7 44 5,0 50 80 3,5 1,4 0,2 130 180 C5v1 48 5,4 40 60 2,7 0,8 1,2 110 160 C5V6 5,2 6,0 15 40 2,0 1,2 2,5 95 140 Cc6V2 58 6,6 6 10 0,4 2,3 3,7 90 130 C6V8 6,4 7,2 6 15 1,2 3,0 45 85 110 C7V5 7,0 7,9 6 15 25 40 5,3 80 100 Cc8V2 7,7 8,7 6 15 3,2 46 6,2 75 95 cov 8,5 96 6 15 3,8 55 7,0 70 90 C10 94 10,6 8 20 45 6,4 8,0 70 90 C11 10,4 11,6 10 20 54 7,4 9,0 65 85 C12 11,4 12,7 10 25 6,0 8,4 10,0 65 85 C13 12,4 14,1 10 30 7,0 9,4 11,0 60 80 C15 13,8 15,6 10 30 9,2 11,4 13,0 55 75 c16 15.3 17,1 10 40 10,4 12,4 14,0 52 75 C18 16,8 19,1 10 45 12,4 14,4 16,0 47 70 C20 18,8 21,2 15 55 14.4 16,4 18,0 36 60 C22 20,8 23,3 20 55 16,4 18,4 20,0 34 60 C24 22,8 25.6 25 70 18,4 20,4 22,0 33 55 at I7test =2mA at IZtest =2mA at 'Ztest =2mA C27 25,1 28,9 25 80 21,4 23,4 25,3 30 50 C30 28,0 32,0 30 80 24,4 26,6 29,4 27 50 C33 31,0 35,0 35 80 27,4 29,7 33,4 25 45 C36 34,0 38,0 35 90 30,4 33,0 37,4 23 45 C39 37,0 41,0 40 130 33,4 36,4 41,2 21 45 C43 40,0 46,0 45 150 37,6 41,2 46,6 21 40 C47 44.0 50,0 50 170 42,0 46,1 518 19 40 C51 48,0 54,0 60 180 46,6 51,0 57,2 19 40 C56 52,0 60,0 70 200 52,2 57,0 63,8 18 40 C62 58,0 66,0 80 215 58,8 64,4 71,6 17 35 C68 64,0 72,0 90 240 65,6 71,7 79,8 17 35 C75 70,0 79,0 95 255 73,4 80,2 88,6 16,5 35 October 1993 1711MB 6653931 0025754 T15 MAPX BZV90 SERIES N AMER PHILIPS/DISCRETE b?E D 6 V2 (V} 4 2 oY 100 Iz (mA) 200 7277971 2 Fig. 2 Dynamic characteristics; typical values; Tj = 25 %. 15 Vz(V) 10 5 0 100 Iz typical values (mA) T= 25C dynamic characteristics 200 7Z59234.5 Fig. 3 Dynamic characteristics; typical values at Tj = 25C. 1712 October 1993MB 66535931 0025755 451) MMAPX Silicon planar voltage regulator diodes BZV90 SERIES N AMER PHILIPS/DISCRETE B?E D 40 Vz_(V) 30 20 10 50 Iz (mA) typical values , Tj= 25C dynamic characteristics 7Z61216.3 100 Fig. 4 Dynamic characteristics; typical values; Tj = 25 C. 90 Vz (V) 70 50 30, 50 Iz (mA) typical values , Tj =25C dynamic characteristics 100 7261217.3 Fig. 5 Dynamic characteristics; typical values at Tj = 25. Octaber 1993 1713MB 665399351 0025756 898 MAPX BZV90 SERIES N AMER PHILIPS/DISCRETE BE D Model for calculating the static working voltage (Vz stat). This model can be derived from VZ stat = VZ dyn + AVz of which Vz dyn /s given in the preceding tables and can be derived from the typical dynamic characteristic curves (Figs 2, 3, 4 and 5) AV? = AT x Sz. For S7 see tables and graphs Sz versus Tj AT = Prot X Rth j-a = '2 * VZ dyn * Rth j-a- Following AVz = 17 x V2 dyn x Rth j-a * Sz and the model will be: VZ stat = VZ dyn + '!2 * VZ dyn * Rth j-a X SZ Calculating example BZV90-C24 mounted on an epoxy printed circuit board of 40 mm x 40 mm x 1.5 mm; at lz = 7 mA. Vz stat = 24 + (0.007 x 24 x 0.095 x 20.4) = 24 + 0,32 = 24.32 V 7259 1 max. permissible non-repetitive peak reverse power dissipation versus duration Pzsm (W) MGA001 15 40? Prot (Ww) 1.0 T= 25C (prior to surge) 10 50C 0.5 (prior to surge 0 te 9 50 100 + mb (2c) 15 10 1 duration(ms) 10 Fig. 6 Power derating curve. Fig. 7. 1714 October 1993MB 6653931 0025757 724 MAPX Silicon planar voltage regulator diodes BZV90 SERIES N AMER PHILIPS/DISCRETE b7E D 300 7259230 1 +10 7259112 4 Sy : typical values | (mv/ Tj=25 to 150C F (mA) +7,5 200 +5 +2,5 100 0 -2,5 0 8p 5 10 5 20 0,6 08 veiv) 1 Tz (mA) Fig. 8 1) = 25 oC, Fig. 9. 7228220 +1 (mV/K) 1 10 100 Iz (ma) 1000 Fig. 10 Typical values temperature coefficient. October 1993 1715MM 6653931 0025758 660 MAPX N AMER PHILIPS/DISCRETE b?E D J \ BZV90 SERIES 410-1 MCBS86 104 MCB587 AVz +AVzZ (mv) (mv) Prot max 1 103 Iz (DC) =5 mA 10 102 Iz(DC) =5 ma 102 10 103 1 5 0 10 20 vz ) Vz {V) Fig. 11 Typical change of working voltage; Fig. 12 Typical change of working voltage; Tj = 25 OC, Tj = 25 oC, 104 MCB585 +AV7 Ptot max (mv) 103 Iz (DC) = 2mA 102 10 Qo 20 40 60 0 8 vz () Fig. 13 Typical change of working voltage; Tj = 25 oC. 1716 October =) (MM 6653931 0025759 ST? MAPX Silicon planar voltage regulator diodes BZV90 SERIES N AMER PHILIPS/DISCRETE L7E D 7277973 2 104 "aiff (Q) 10? 1 10~1 1 10 Iz (mA) Fig. 14 Typical values; Tj = 25 9C; f = 1 kHz. ) ( ose 1993 1717