5 JIYNPNEEEWAYHRS IIA Penh. SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR TENTATIVE OQ kKEyv WEA O KBNz*1 ot + ITR oo O vDce-pezr-4 17 Lt RR INDUSTRIAL. APPLICATIONS CO BRV 5-27 o Power Amplifier, Power Switching Applications Unit in mm o DpO-DC Converter and Regulator Applications. + R2SBS5SRLEAYSVAYAVCRO ETS of uplementary to 28B552 TP AREMAR : Pe=150W (Te=25T) av 2 SRRMAKEN : Ig=15A MECH: Voxpo=180V 1 BASE @ EMITTER MATH MAXIMUM RATINGS (Ta=25U ) COLLECTOR (CASE) CHARACTERISTIC SYMBOL RATING UNIT JEDEC TO-3 svoaeN- AMBE VoBo 220 v BIAS TC-3, TB-3 TOSHIBA -21Al1A : avege- ms oe WBE Voxro 180 . Vv z ! THe VBACTS CMH Sy A tx = v 5 v PX ~ laochia EBO MOUNTING KIT NO. AC7S - v Dp # BOB Ig 15 A =z y # BE Ip -15 A nN - mm a ve Ip 3 A avo athe (Tco=25C)1 Po 150 Ww R e i & Ty 150 c a i id Ts tg -65~150 c 941250852 \ BRM ELECTRICAL CHARACTERISTICS ( Ta=25C) CHARACTERISTIC SYMBOL CONDITION MIN. | TYP.| MAX. | UNIT V2 4% L BE HE] Ion, Vop= 150V, Ip =O - - 100 | 4A tive L Hh @ iE! Ippo Ver 5V, Ip=0 - - 1 mA aUZR + ZAREK EEE Ive R)cpoj Io= loma, Ip=o 220 ~ - Vv SVR x8 > SAREE AE IV(BR)CRO|Ig= s0mA, . Rppe=co 180 - - v Ti ys#-S AMMK EE |VCBR)EBO| Ip= 5mA, Ig=0 5 - - v Vor= 5V, Ig= 5A , _ AFR) (Note. 2) 25 - 80 Rt Eh 6 * : Vop= 5V, Iqg= 15A CE 5vV, Cc - (Note.1) A PHQ) 10 15 . Ig= 10A, Ip= 1A UPR Ts y : - ~ 0 v AVZAa- xi & iPS AI E VoR(sat) (Note. 1) Rl Ig= 104, Ip= 1A N~- A+ Dy ; Vv - Vv > # fel ta EE Vem eat) (Note. 1) 15 25 hFvYY Yay BRB fo- Vor= 10V, Ig= 14 - 4 - MHZ Vop= 50V, Iip=o v Ke c - - F a 27 2H HB BI Cop f1 MHz 160 Pp % B-vay Be] top ~ 1 2 ue } SR HR MY] tote Fig. 1 - a5 | 7 hs ~ 7 F Me Se fi] te - 0.5 1 a Note.1,; Pulse Test: Pulse width S 30048, Duty cycle S 2% Note.2; hpg (iC Lb FROLSOUCHML, RARRL THY Et, According to the value of hpp(l), the 2SD552 is classified as follows, CLASSIFICATION MIN. MAX. 28D552-BN 25 50 28D552-R 40 80 beds an Fig.ls 249% SRP HE Voo=125V SWITCHING TIME TEST CIRCUIT G R088 8 4 I OUTPUT a Bl 1 INPUT ow eR - a IB2 942 DUTY CYCLE = 1% Ipi=~-Ipeg=Q5A2spuu2 STATIC CHARACTERISTIC Ipr roma Qo 200 100 Oo 20 40 80 : AVIS > Ty 9 TBE ~2 Bibit Ip ma) Vor () e - e o oF ei Diys eb COMMON EMITTER To=25T wn Naz HE Ver (V) STATIC CHARACTERISTIC e 17 9 BBE g00 200 100 0 20 940 60 ~-2 ME Ip @A) DUIS + DR FE O4 yy Von Ww Hing a8 Ro RS Zing Bib COMMON EMITTER To=100T STATIC CHARACTERISTIC 0 200 100 0 20 40 60 680 -2 BBE Ip (mA) S99 2359 ABE wy Vew() Ziyd ib COMMON EMITTER To=-5SCT 943IUP PBR To (A) IU SRR Io (A) AVIS MR Iq (A) 2sp002 \ Ig-Vop(LOW VOLTAGE REGION) R = iy : 450 | COMMON EMIT 25 300 10 0 o 2 4 6 8 10 iw AVI9> zi ySMME Vor (Vv) Ig-Vog(LOW VOLTAGE REGION) miv 14 COMMON EMITTER Tg =100T 300 200 50 Ip=20mA 0 0 2 4 6 8 10 (4 AVI9+-r ty SMBE Vop(V) Io Var Diy 9 ehh COMMON EMITTER Vop=5V Tg=100 25 65 0 Q4 a8 12 16 20 24 oS MRE Yaw (V) Nasa? 944 14 28 %B2 36 IV797RMWH Io (A) BREWER hyp 79 RANE Von ( sat y AVI9+ =. ad 00 mio COMMON EMITTER -55T 10 450 8 350 250 6 4 R =z = GO 0 zg 4 6 8 1o 12 4 BU79+- => FRMME Vow (V) hpp - Ig 500 Zi yd Rib 300 COMMON EMITTER Vv =5V 100 50 30 10 5 Q05 Ql a3 as 1 3.5 10 R20 3V79 Mit Ig (A) Von(sat) ~ Io oa. 5 Ic-Vor(LOW VOLTAGE REGION) Liys 3 COMMON EMITT 05 a1 Ig/Ip =10 3 Ig (A) O03 a5 5 10 2 IV7 9 Rit 1eso852 wns N-2%+E8y MAO Ver (oat) (V) a < 2 D AS 7 s w iN a S n VBE(sat) Io Diy 9 Mb COMMON EMITTER Ig/Ip =10 al a3 a5 1 3 5 10 20 aVU7 SMR Ico (A) KAOECAR aso *KSINGLE NONREPETITVE PULSE Tg=25T Ig MAX, (PULSED Rew ARABRC Lo THAV-F4AVTILCH REDEMSVET. DERATE LINEARLY FOR Tg ABOVE 25C Voro MAX., wa oS Qo 5 10 30 50 100 av7e-2iy MBE Vom (CV)