Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com
POWER MOSFET IRF820
Advance Information
Ordering Inform ation
Device Package Temp.
IRL820T TO-220
0 to 150°C
IRL820S TO-263 ( D2 ) 0 to 150°C
Absolute Maximum Rating
Parameter Max Unit
ID@ TC =25°
°°
°C Continuous Drain Cur rent, V GS @10V 2.5
ID@ TC =100°
°°
°C Continuous Drain Cur rent, V GS @10V 1.6
IDM Pulsed Drain Current (1) 8.0 A
PD @ TC =25°
°°
°C Power Dissipation 50 W
Linear Derating Factor 0.40
Linear Derating Factor ( PCB Mount, D2 ) 0.025 W/°
°°
°C
VGS Gate-to- Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 210 mJ
IAR Avalanche Current (1) 2.5 A
EAR Repetitive Avalanche Energy (1) 5.0 mJ
dv/dt Peak Diode Recovery dv/dt (3) 3.5 V/ns
TJ, TSTG Junction & Storage Temperature Range −55 to +150
Soldering Temperature, for 10 seconds 300 (1.6mm from case) °
°°
°C
Thermal Resistance
Parameter Min Typ Max Units
Rθ
θθ
θJC Junction-to Case - - 2.5
Rθ
θθ
θCS Case-to-Sink, Flat, Greased Surface (TO-220) - 0.50
Rθ
θθ
θJA Junction-to Ambient ( PCB Mount, D2 ) - - 40
Rθ
θθ
θJA Junction-to Ambient - - 62
°
°°
°C/W
Description
The Bay Linear MOSF ET’s provid e the designers with the best
combination of fast switching, ruggedized device design, low
0n-resist ance and low cost -effectiveness.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 Watts. Also, available in a D2 surface
mount power package with a power dissipation up to 2 Watts.
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
VDSS = 500V
RDS (ON) = 3.0 Ω
I
D
=2.5A
Bay Linear
Bay LinearBay Linear
Bay Linear
Linea r Exc e lle nc e
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com
IRF820
Electrical Characteristics ( TC = 25°
°°
°C unless otherwise specified)
Symbol Parameter Conditions Min Typ Max Units
V(BR)DSS Drain-to-source Breakdown
Voltage VGS = 0V, ID = 250µA 500 V
V(BR)DSS /
∆
∆∆
∆TJ Breakdown Voltage
Temperature Coefficient Reference to 25°C,
ID = 250µA - 0.59 - V/°
°°
°C
ID(ON) On-State Drain Current
(note 2) VGS > ID(ON) x RDS(ON)Max 2.5
A
RDS(ON) Static Drain-to-Source
On-Resistance VGS =10V, ID = 1.5A
(note 4) 3.0
Ω
ΩΩ
Ω
VGS(TH) Gate Threshold Vo ltage VDS = VGS, ID = 250µA 2.0 - 4.0 V
gfs Forward Transconductance VDS = 50V, ID = 1.5A
1.5 - - S
VDS = 500V, VGS = 0V 25
IDSS Drain-to-Source Leakage
Current VDS = 400V, VGS = 0V,
TC= 125°C - -
250 µ
µµ
µA
Gate-to-Source Forward
Leakage VGS = 20V 100
IGSS Gate-to-Source Reverse
Leakage VG = -20V - -
-100
nA
Qg Total Gate Charge - - 24
Qqs Gate-to-Source Charge - - 3.3 nC
Qgd Gate-to-Drain (“Miller”)
Charge
ID = 2.1A
VDS = 400V
VGS = 10V
(note 4) 13
nC
td ( on) Turn-O n Delay Time - 8.0 -
Tr Rise Time - 8.6 -
td (off) Tur n -Off Dela y Time - 33 -
Tf Fall Time
VDD = 250V
ID = 2.1A
RG = 18Ω
RD = 100Ω (note 4) - 16 -
ns
LD Internal Drain Inductance - 4.5 -
LS Internal Source Inductance
Between lead 6mm (0.25in.)
from package and center or die
contact - 7.5 - nH
Ciss Input Capacitance - 360 -
Coss Output Capacitance - 92 -
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
F = 1.0MHZ - 37 - pF
Source-Drain Rating Characteristics
Symbol Parameter Conditions Min Typ Max Units
IS Continuous Sourc e Current
(Body Diode) - - 2.5
ISM Pulsed Source Current
(Body Diode) (Note 1)
MOSFET symbol showing the
integral reverse p-n junctio n
diode. - - 8.0
A
VSD Diode Forward Voltage (4) TJ=25°C, IS=2.5A,VGS=DV - - 1.6
V
trr Reverse Recovery Time - - 520 ns
Qrr Reverse Recovery Charge TJ=25°C, IF=2.1A
di/dt=100A/µs (Note 4) - 0.70 1.4
µ
µµ
µC
ton Forward Turn-On Ti me Intrinsic turn-on time is negligible (turn-on is dominated by (LS+LD)
Notes: 1. Repetitive Rating; puls e width limited by max. junction temperature.
2a. VDD = 50V, starting Tj = 25°C, L = 440µH RG = 25Ω, IAS = 28A
3. ISD ≤ 2.5A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, Tj ≤ 150°C
4. Pulse with ≤ 300µs; duty cycle ≤ 2%
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com
Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The applicati on circuit examples ar e only to explain the representati ve applicatio ns of the devices and ar e not intended to guarantee any c ircuit
desi gn or permit any industrial prop erty right to other rights to execute. Bay Linear takes no responsibility for any prob lems related to any
industrial property right resulting from the use of th e conten ts shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space eq uipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
