BDX67
BDX67A
BDX67B
BDX67C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 7/99
NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
PNP complements are:
BDX66, BDX66A, BDX66B, BDX66C.
VCEO Collector - emitter voltage (open base)
VCBO Collector - base voltage (open emitter)
VEBO Emitter - base voltage (open collector)
ICCollector current
ICM Collector current (peak)
IBBase current
Ptot Total power dissipation at Tmb= 25°C
TjMaximum junction temperature
Tstj Storage junction temperature
Rth j-mb Thermal resistance, junction to mounting base.
60 80 100 120 V
80 100 120 140 V
5555V
16 A
20 A
250 mA
150 W
200 °C
-65 to +200 °C
1.17 K/ W
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
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TO3 Package.
Case connected to collector.
BDX BDX BDX BDX
67 67A 67B 67C
BE
4.2
26.6 max.
39.5 m ax.
30.1
16.9
10.9
2.5
1.0
12.8
20.3 max .
9.0 max.
mA
mA
V
pF
kHz
V
BDX67
BDX67A
BDX67B
BDX67C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 7/99
ELECTRICAL CHARACTERISTICS (Tj= 25°C, unless otherwise stated)
ICEO Collector cut-off current
IEBO Emitter cut-off current
hFE D.C. current gain (note 1)
VBE Base - emitter voltage (note 1)
CcCollector capacitance
fhfe Cut-off frequency
hfe Small signal current gain
VFDiode, forward voltage
IE= 0, VCB = VCEOmax
IE= 0, VCB = ½VCBOmax, Tj = 200°C
IB= 0, VCE = ½VCEOmax
IC= 0, VEB = 5V
IC=1A, VCE = 3V
IC= 10A, VCE = 3V
IC= 16A, VCE = 3V
IC= 10A, VCE = 3V
IE= Ie= 0, VCB = 10V f = 1MHz
IC= 5A, VCE = 3V
–IBoff = 0, ICC = 7.8 A
tp= 1ms,
d
< 1%
IC= 5A, VCE = 3V, f = 1MHz
IF= 10A
1
5
1
5
5200
1000 4000 2.5
300
50
20
2.5
Parameter Test Conditions Min. Typ. Max. Unit.
Note 1: Measured under pulse conditions , tp< 300
m
s,
d
< 2%
2
E(BR) Turn-off breakdown energy
with inductive load
VCEsat Collector - emitter saturation
voltage IC= 10A, IB= 40mA V
150 mJ
ICBO Collector cut-off current mA
R1 typ. 3K
W
R2 typ. 80
W
R2R1
B
C
E
Circuit Diagram
