COLLMER SEMICONDUCTOR INC Fi High voltage fast recovery diode for snubber circuit (Non-insulated) 4YBE D MB 2234752 DOODBYY 75) MB COL 7-93-07 Device Varm Vasm Iriavy lesm it Vem os tppM ter Rin{j-c) Package Net type weight Volts Volts Amps. Amps. As Volts mA us C Grams ERG28-12 1200 1320 30 500 1000 3.0 10 0.60 0.80 _ 25 ERG78-12 1200 1320 30 500 1000 3.0 10 0.60 0.80 _ 25 1F60A-120F 1200 1320 60 1000 4000 3.0 20 0.60 0.32 R101 33 1F60A-120R 1200 1320 60 1000 4000 3.0 20 0.60 0.32 R101 33 FE Schottky-barrier diode modules Device Varo Vasm Iriavy frsm Pt Vem IRAM Rin{j-c) Package Net Internal type weight | circuit Volts Volts Amps. Amps. As Volts mA C/W Grams 2BI60E-004 40 48 60 x 2 850 2890 0.58 300 0.5 R205A 110 Fig. 5 2Bl100E-004 40 48 100 x 2 1600 10240 0.55 600 0.3 R205A 110 Fig. 5 2BI200E-004C, N, D 40 48 200x2* 3000 36000 0.55 1200 0.15 R208 150 Fig. 5 * lo 10] Diode and tyristor modules Device Application Diode and tyristor Diode Tyristor Package Net Internal type Vram Varasm lowv ltsm Pt Tj Vem Vim \or weight | circuit Volts Volts Amps. Amps. As C | Volts Volts mA Grams 3R3TI20E-080 Power supply 800 900 20 400 660 125 | Rectifier: | 1.30 80 R611 140 Fig. 6 3R3TI30E-080 _ | for inverter, 800 900 30 600 1490 125 | 1.20 1.40 80 | R611 140 ~=| Fig. 6 __ nnn battery charger - 3R3TI60E-080 and DC motor 800 900 60 1000 4150 125 1.30 80 R611 140 Fig. 6 4R3TI20Y-080 800 900 20 400 660 125 | Rectifier: | 1.30 980 R701 140 Fig. 7 4R3TI3Z0Y-080 800 900 30 600 1490 125 | 1.20 1.40 80 | R701 140 | Fig. 7 4R3TI60Y-080 800 900 60 1000 4150 125 | Output: 1.30 80 R701 140 Fig. 7 6RITIZ0Y-080 | For dynamic 800 900 30 300 375 125 | 1-10 1.40 80 | R702 140 ~([ Fig. 8 breaking circuit Internal circuit Fig.1 Fig.2 Fig.3 Fig4 GC N D Fig.5 o* oO Ko Fig.6 oO + Fig.7 Ko ofa) . {pal [2 a2 | G3 ] Fig.8 (49 GO OK A A k G1 | paz | a3 , * > | + (yo} kk P So- ht 4 (Mo4 zk <x (2) A AA (3) TY (2) _ Aa A (3) tL _ A AS 58 o-