Product Specification
PE42650A
Page 2 of 11
©2008-2009 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0267-02 │ UltraCMOS™ RFIC Solutions
Table 1: Electrical Specifications @ +25 °C, VDD = 3.3 V (ZS = ZL = 50 Ω ) unless oth erwi se no t ed
Table 3. Absolute Maximum Ratings
Absolute Maximum Ratings
Exceeding abs olute maxim um ratings may cause
permanent damage. Operation should be res tricted to
the limits in t he Operating Ranges t able. Oper ation
between oper ating range maxi m um and abs olute
maximum for extended periods m ay r educ e r eliability.
Symbol Parameter/Conditions Min Max Units
VDD Power supply voltage -0.3 4 V
VI Voltage on any DC input -0.3 VDD+
0.3 V
TST Storage temperature range -65 150 °C
TCASE Maximum case temperature 85 °C
Tj Peak m ax imu m junc tio n
temperature (10 seconds max) 200 °C
PIN
TX Input Power1
(V SWR 20:1, 10 seconds) 40 dBm
TX Input Power1 (50 Ω) 45 dBm
RX Input Power at ANT pin2
(VSWR 20:1) 27 dBm
RF Input Power on inactive ports or
supply unbi ased 27 dBm
PD Maximum Power Dissipation fro m
RF Insertion Loss 2.8 W
VESD ESD Vo ltage (HBM, MIL_STD 883
Meth od 301 5.7) 2000 V
Table 2. Operating Ranges
Parameter Min Typ Max Units
Frequency Range 30 1000 MHz
TX Input Power1 (VSWR ≤ 8:1) 40 dB m
RX Input Power2 (VSWR ≤ 8:1) 27 dBm
VDD Power Supply Voltage 3.2 3.3 3.4 V
IDD Power Supply Current 90 170 uA
Control Voltage High 1.4 V
Control Voltage Low 0.4 V
TOP Operating temperature
range (Cas e) -40 85
°C
Tj Operating junction
temperature 140 °C
Moist u re Sensitivit y Lev el
The Mois ture Sensitiv ity Level r ating for the PE42650A
in the 5x5 QF N pac kage is MSL3.
Parameter Conditions Min Typ Max Units
TX Insertion Loss1 30 MH z ≤ 1 GHz 0.3 0.5 dB
RX Insertion Loss (Un-Attenuated State)1 30 MHz ≤ 1 GHz 0.5 0.9 dB
RX Insertion Loss (Attenuated State)1 800 MHz 13 14.5 16 dB
0.1 dB Inp ut Compre ssion Point 800 MH z, 50% duty cycle 45.4 dBm
Isolation (Supply Biased): TX-TX 800 MHz 30 33 dB
Isolation (Supply Biased): TX-RX 800 MHz 35 38 dB
Unbiased Isolation: ANT - TX, VDD, V1,
V2, V3=0 V 800 MHz, +27 dBm 6 10 dB
Unbiased Isolation: ANT - RX, VDD, V1,
V2, V3=0 V 800 MHz, +27 dBm 14 22 dB
RX Port Return Loss1 Un-Attenuated State, 800 MHz 18 22 dB
Atte nuat ed S t ate, wi th ex tern al matc hi ng ind uc tor o ptimized w it hout
att en uator en gag ed, 800 MHz 12 18 dB
TX an d ANT Port Return Loss1 800 MHz 20 23 dB
TX, 2n d H arm onic
TX, 3rd Har m onic 800 MHz @ 42.5 dBm
800 MHz @ 42.5 dBm -81
-81 -79
-79 dBc
dBc
RX IIP3 Un-Attenuated State, 800 MHz, 150 kHz tone separation 30 dBm
Switching Time 50% of CTRL to 10/90% of RF 0.1 0.5 ms
Notes: 1. Supply biased
2. Supply biased or unbiased
Notes: 1. Supply biased
2. Supply biased or unbiased
Note: 1. The device was matched with ~4 nH inductance per RF port. RX port may not need matching inductor.