TOSHIBA {DISCRETE/OPTO} 6? de Bsoszeso ooowen 9 TENTATIVE j 9097250 TOSHIBA. oo a ere Silicon Epitaxial Planar Type 1 N91 6, 1 N91 6A, , N916B (DISCRETE/OPTO) _67C_ 09286 _0T03 -09 Diode 1 COMMUNICATION AND INDUSTRIAL APPLICATIONS. voit in mm HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. 3 FEATURES: & . Low Forward Voltage { Vp=l.0V (Max.) . Small Total Capacitance : Cr=2pF (Max.) z . Fast Reverse Recovery Time : tyy=4ns (Max.) 8 Hermetically Sealded Miniature Glass Package, . g a CATHODE MARK ; MAXIMUM RATINGS (Ta=25C) Tl CHARACTERISTIC SYMBOL RATING | UNIT gos z Maximum (peak) Reverse Voltage VRM 100 Vv 8 Reverse Voltage VR 75 Vv Maximum (Peak) Forward Current Ie 450 mA JEDEO DOnss Average Forward Current Io 150 mA EIAs g0-40 Surge Current (las) IpsM 2 A TOBHIBA 1-RALA Power Dissipation P 500 mW | Weight : 0.148 Junction Temperature Tj 200 c Storage Temperature Range Tstg -65~200{ C ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.) MAX. {UNIT 1N916 VF(1) Ip2l0mA - 0.75, 1.0 Vv Forward Voltage 1N916A VF(2) Tp=20mA - 0.79 1,0 Vv insiep |__YEG3) | TR=5ma 0.63 [0.68 }0.73 | v VE(4) Tp=30mA - {0.81} 1.0 Vv Ir(1) | Vr=20V - - 25 | nA Reverse Current Ipn(2) | VR=20V, Ta=150C - - 50 | #A Ip (3) Vp275V - - aA Total Capacitance Cr Vp=0, f=1MHz - - pF Reverse Recovery Time trr TpelOmA, VR=6V - - 4 j] ns RL=1000, Ipr=1mA 121- TOSHIBA CORPORATION