FEBRUARY 2009
DSC-5280/08
1
©2004 Integrated Device Technology, Inc.
Features
◆128K x 36, 256K x 18 memory configurations
◆◆
◆◆
◆Supports fast access times:
Commercial:
– 7.5ns up to 117MHz clock frequency
Commercial and Industrial:
– 8.0ns up to 100MHz clock frequency
– 8.5ns up to 87MHz clock frequency
◆LBO input selects interleaved or linear burst mode
◆◆
◆◆
◆Self-timed write cycle with global write control (GW), byte write
enable (BWE), and byte writes (BWx)
◆◆
◆◆
◆3.3V core power supply
◆◆
◆◆
◆Power down controlled by ZZ input
◆◆
◆◆
◆3.3V I/O
◆◆
◆◆
◆Optional - Boundary Scan JTAG Interface (IEEE 1149.1
compliant)
◆◆
◆◆
◆Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
grid array
Pin Description Summary
NOTE:
1. BW3 and BW4 are not applicable for the IDT71V3579.
Description
The IDT71V3577/79 are high-speed SRAMs organized as
128K x 36/256K x 18. The IDT71V3577/79 SRAMs contain write, data,
address and control registers. There are no registers in the data output
path (flow-through architecture). Internal logic allows the SRAM to gen-
erate a self-timed write based upon a decision which can be left until the
end of the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V3577/79 can provide four cycles of data
for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will flow-through from the
array after a clock-to-data access time delay from the rising clock edge of
the same cycle. If burst mode operation is selected (ADV=LOW), the
subsequent three cycles of output data will be available to the user on the
next three rising clock edges. The order of these three addresses are
defined by the internal burst counter and the LBO input pin.
The IDT71V3577/79 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
A
0
-A
17
Address Inputs Input Synchronous
CE Chip Enable Input Synchronous
CS
0
, CS
1
Chi p Se le c ts Inp ut S ync hro no us
OE Output Enable Inp ut Asy nc hro no us
GW Glo bal Write En abl e Inp ut S ync hro no us
BWE Byte Write Enable Input Synchronous
BW
1
, BW
2
, BW
3
, BW
4
(1)
Ind ivi dual B yte Write S ele c ts Inp ut S ync hro no us
CLK Clock Input N/A
ADV Burst Address Advance Input Synchronous
ADSC Ad d re s s S tatus (Cac he Co ntrol le r) Inp ut S y nc hrono us
ADSP Address Status (Processor) Input Synchronous
LBO Linear / Inte rleave d Burst Order Input DC
TMS Test Mode Select Input Synchronous
TDI Test Data Input Input Synchronous
TCK Test Clock Input N/A
TDO Test Data Output Output Synchronous
TRST JTAG Reset (Optional) Input Asynchronous
ZZ Sleep Mode Input Asynchronous
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
Data Inp ut / O utp ut I/O S y nc hro n o us
V
DD
, V
DDQ
Co re Powe r, I/O Po wer Sup ply N/A
V
SS
Ground Supply N/A
5280 tbl 01
128K X 36, 256K X 18
3.3V Synchronous SRAMs
3.3V I/O, Flow-Through Outputs
Burst Counter , Single Cycle Deselect
IDT71V3577S
IDT71V3579S
IDT71V3577SA
IDT71V3579SA
6.422
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Pin Definitions(1)
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
Symbol Pin Function I/O Active Description
A
0
-A
17
Address Inputs I N/A Synchronous Address inputs. The address register is triggered by a combi-nation of the rising edge of CLK
and ADSC Low o r ADSP Lo w and CE Lo w.
ADSC Address Status
(Cac he Co ntrolle r) I LOW Synchronous Addre ss Status from Cache Controller. ADSC is an activ e LOW input that is used to lo ad the
address registers with new addresses.
ADSP Address Status
(Processor) I LOW Synchronous Address Status from Processor. ADSP is an active LOW input that is used to lo ad the add ress
registers with new addresses. ADSP is gated by CE.
ADV Burst Address
Advance I LOW Synchronous Address Advance. ADV i s an activ e LOW inp ut that is used to advanc e the inte rnal b urs t co unter,
co ntrolling b urst acce ss after the i nitial add ress is lo aded. When the input is HIGH the burst counter is not
incremented; that is, there is no address advance.
BWE Byte Write Enable I LOW Synchronous byte write enable gates the byte write inputs BW
1
-BW
4
. If BWE is LOW at the rising edge of CLK
then BWx inputs are passed to the next stage in the circuit. If BWE is HIGH then the byte write inputs are
blocked and only GW can initiate a write cycle.
BW
1
-BW
4
Ind ivid ual Byte
Write Enab le s I LOW Synchronous byte write enables. BW
1
controls I/O
0-7
, I/O
P1
, BW
2
controls I/O
8-15
, I/O
P2
, etc. Any active byte
write causes all outputs to be disabled.
CE Chip Enable I LOW Sync hronous c hip e nable . CE is used with CS
0
and CS
1
to enab le the IDT71V3577/79. CE also gates ADSP.
CLK Cl o ck I N/ A This is the clo c k inp ut. A ll ti ming re fe re nc e s fo r the d e vic e are m ad e wi th re s p e ct to thi s i np ut.
CS
0
Chip Select 0 I HIGH Synchronous active HIGH chip select. CS
0
is used with CE and CS
1
to e nab le the chip.
CS
1
Chip Select 1 I LOW Synchronous active LOW chip select. CS
1
is used with CE and CS
0
to e nab le the chip .
GW Global Write
Enable I LOW Synchronous g lobal write enab le. This input will wri te all fo ur 9-bit data bytes when LOW on the rising e dge of
CLK. GW supersedes individual byte write enables.
I/O
0
-I/O
31
I/O
P1
-I/O
P4
Data Input/Output I/O N/A Synchronous data inp ut/output (I/O) pins. The data input path is registered, triggered by the rising edge of
CLK. The data output path is flow-through (no output register).
LBO Linear Burst Ord er I LOW Asynchro no us b urs t o rder se le ctio n inp ut. Whe n LBO is HIGH, the inter-leaved burst sequence is selected.
When LBO is LOW the Linear burst sequence is selected. LBO is a static i nput and must not change state
while the device is operating.
OE Outp ut Enable I LOW Asy nchronous outp ut e nable . Whe n OE is LOW the data output drivers are enabled on the I/O pins if the chip
is also selected. When OE is HIGH the I/O pins are in a high-impedance state.
TMS Test ModeSelect I N/A Gives input command for TAP controller. Sampled on rising edge of TDK. This pin has an internal pullup.
TDI Te s t Data Inp ut I N/ A Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK. This pin has an
inte rnal pullup.
TCK Test Clock I N/A Clock input of TAP co ntroller. Each TAP event is clocked. Test inputs are captured on rising edge of TCK,
while test o utputs are drive n fro m the falling edge of TCK. This pin has an internal pullup.
TDO Te s t DataOutp ut O N/ A Serial output of registers placed be tween TDI and TDO. This output is active depending on the state of the
TAP controller.
TRST JTAG Reset
(Optional) ILOW
Optional Asynchronous JTAG rese t. Can be used to reset the TAP contro ller, but not required. JTAG reset
occurs automatically at p ower up and als o resets using TMS and TCK per IEEE 1149. 1. If no t us ed TRST can
be left floating. This pin has an internal pullup. Only available in BGA package.
ZZ Sleep Mode I HIGH Asynchronous sleep mode input. ZZ HIGH will g ate the CLK internally and power down the IDT71V3577/79 to
its lowest power consumption level. Data retention is guaranteed in Sleep Mode.This pin has an internal pull
down.
V
DD
Power Supply N/A N/A 3.3V core power supply.
V
DDQ
Power Supply N/A N/A 3.3V I/O Supply.
V
SS
Ground N/A N/A Ground.
NC No Connect N/A N/A NC pins are not electrically connected to the device.
5280 tbl 02
6.42
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
3
Functional Block Diagram
A
0-
A
16/17
ADDRESS
REGISTER
CLR
A1*
A0* 17/18
2
17/18
A
2-
A
17
128K x 36/
256K x 18-
BIT
MEMORY
ARRAY
INTERNAL
ADDRESS
A
0
,A
1
BW
4
BW
3
BW
2
BW
1
Byte 1
Write Register
36/18 36/18
ADSP
ADV
CLK
ADSC
CS
0
CS
1
Byte 1
Write Driver
Byte 2
Write Driver
Byte 3
Write Driver
Byte 4
Write Driver
Byte 2
Write Register
Byte 3
Write Register
Byte 4
Write Register
9
9
9
9
GW
CE
BWE
LBO
I/O
0
-I/O
31
I/O
P1
- I/O
P4
OE
DATA INPUT
REGISTER
36/18
OUTPUT
BUFFER
DQ
Enable
Register
OE
Burst
Sequence
CEN
CLK EN
CLK EN
Q1
Q0
2
Burst
Logic
Binary
Counter
5280 drw 01
ZZ
Powerdown
,
JTAG
(SA Version)
TMS
TDI
TCK
TRST
(Optional)
TDO
6.424
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
100 Pin TQFP Capacitance
(TA = +25° C, f = 1.0mhz)
Recommended Operating
Temperature Supply Voltage
Absolute Maximum Ratings(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6 . This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.
7. TA is the "instant on" case temperature.
Recommended DC Operating
Conditions
NOTES:
1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle.
2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Symbol Rating Commercial &
Industrial Values Unit
V
TERM
(2)
Terminal Voltage with
Re sp e c t to GND -0.5 to +4.6 V
V
TERM
(3,6)
Terminal Voltage with
Re sp e c t to GND -0.5 to V
DD
V
V
TERM
(4,6)
Terminal Voltage with
Re sp e c t to GND -0. 5 to V
DD
+0.5 V
V
TERM
(5,6)
Terminal Voltage with
Re sp e c t to GND -0. 5 to V
DDQ
+0.5 V
T
A
(7)
Commercial
Operating Temperature -0 to + 70
o
C
Industrial
Operating Temperature -40 to +85
o
C
T
BIAS
Temperature
Under Bias -55 to +125
o
C
T
STG
Storage
Temperature -55 to +125
o
C
P
T
Po we r Di ssipati o n 2. 0 W
I
OUT
DC Outp ut Curre nt 50 mA
5280 t b l 03
Grade Temperature
(1)
V
SS
V
DD
V
DDQ
Co mme rc ial 0° C to +70° C 0V 3.3V ± 5% 3.3V± 5%
Ind ustrial -40°C to +85°C 0V 3.3V± 5% 3.3V± 5%
5280 t b l 04
Symbol Parameter Min. Typ. Max. Uni
t
V
DD
Core Supply Volt age 3.135 3.3 3.465 V
V
DDQ
I/O Supply Voltage 3.135 3.3 3.465 V
V
SS
Supply Voltage 0 0 0 V
V
IH
Input High Vo lt age - Inputs 2. 0
____
V
DD
+0.3 V
V
IH
Input High Voltage - I /O 2 .0
____
V
DDQ
+0.3
(1)
V
V
IL
Input Low Volta ge -0.3
(2)
____
0.8 V
5 280 tbl 06
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Inp ut Cap acitance V
IN
= 3dV 5 pF
C
I/O
I/O Cap ac itanc e V
OUT
= 3dV 7 p F
5280 t bl 07
NOTES:
1. TA is the "instant on" case temperature.
119 BGA Capacitance
(TA = +25° C, f = 1.0mhz)
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Input Cap ac itanc e V
IN
= 3dV 7 pF
C
I/O
I/O Cap acitanc e V
OUT
= 3dV 7 pF
5280 tbl 07a
165 fBGA Capacitance
(TA = +25° C, f = 1.0mhz)
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Inp ut Cap acitance V
IN
= 3dV 7 pF
C
I/O
I/O Cap ac itanc e V
OUT
= 3dV 7 pF
5280 tb l 07b
6.42
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
5
Pin Configuration – 128K x 36
100 TQFP
Top View
NOTES:
1. Pin 14 does not have to be directly connected to VSS as long as the input voltage is < VIL.
2. Pin 64 can be left unconnected and the device will always remain in active mode.
10099989796959493929190 8786858483828189 88
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
A
6
A
7
CE
CS
0
BW
4
BW
3
BW
2
BW
1
CS
1
V
DD
V
SS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
8
A
9
NC
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
16
NC
LBO
A
14
A
13
A
12
A
11
A
10
V
DD
V
SS
A
0
A
1
A
2
A
3
A
4
A
5
I/O
P4
I/O
31
I/O
30
V
DDQ
V
SS
I/O
29
I/O
28
I/O
27
I/O
26
V
SS
V
DDQ
I/O
25
I/O
24
V
SS
(1)
V
DD
I/O
23
I/O
22
V
DDQ
V
SS
I/O
21
I/O
20
I/O
19
I/O
18
V
SS
V
DDQ
I/O
17
I/O
16
I/O
P3 80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
I/O
P2
I/O
14
V
DDQ
V
SS
I/O
13
I/O
12
I/O
11
I/O
10
V
SS
V
DDQ
I/O
9
I/O
8
V
SS
NC
V
DD
ZZ
(2)
I/O
7
I/O
6
V
DDQ
V
SS
I/O
5
I/O
4
I/O
3
I/O
2
V
SS
V
DDQ
I/O
1
I/O
0
I/O
P1
V
SS
I/O
15
A
15
5280 drw 02a
,
NC
NC
NC
6.426
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Pin Configuration – 256K x 18
100 TQFP
Top View
NOTES:
1. Pin 14 does not have to be directly connected to VSS as long as the input voltage is < VIL.
2. Pin 64 can be left unconnected and the device will always remain in active mode.
100 99 98 97 96 95 94 93 92 91 90 87 86 85 84 83 82 8189 88
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
A
6
A
7
CE
CS
0
NC
NC
BW
2
BW
1
CS
1
V
DD
V
SS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
8
A
9
NC
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
17
NC
NC
LBO
A
15
A
14
A
13
A
12
A
11
V
DD
V
SS
A
0
A
1
A
2
A
3
A
4
A
5
NC
NC
NC
V
DDQ
V
SS
NC
I/O
P2
I/O
15
I/O
14
V
SS
V
DDQ
I/O
13
I/O
12
V
SS
V
DD
I/O
11
I/O
10
V
DDQ
V
SS
I/O
9
I/O
8
NC
NC
V
SS
V
DDQ
NC
NC
NC
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
10
NC
V
DDQ
V
SS
NC
I/O
P1
I/O
7
I/O
6
V
SS
V
DDQ
I/O
5
I/O
4
V
SS
NC
V
DD
ZZ
(2)
I/O
3
I/O
2
V
DDQ
V
SS
I/O
1
I/O
0
NC
NC
V
SS
V
DDQ
NC
NC
NC
V
SS
(1)
NC
A
16
5280 drw 02b
,
NC
NC
6.42
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
7
1
2
3
4
5
6
7
AV
DDQ
A
6
A
4
ADSP A
8
A
16
V
DDQ
BNC CS
0
A
3
ADSC A
9
CS
1
NC
CA
7
A
2
V
DD
A
13
A
17
NC
DI/O
8
NC V
SS
NC V
SS
I/O
7
NC
ENC I/O
9
V
SS
CE V
SS
NC I/O
6
FV
DDQ
NC V
SS
OE V
SS
I/O
5
V
DDQ
GNC I/O
10
ADVBW
2
NC I/O
4
HI/O
11
NC V
SS
GW V
SS
I/O
3
NC
JV
DDQ
V
DD
NC V
DD
NC V
DD
V
DDQ
KNC I/O
12
V
SS
CLK V
SS
NC I/O
2
LI/O
13
NC NC BW
1
I/O
1
NC
M
V
DDQ
I/O
14
V
SS
BWE V
SS
NC V
DDQ
NI/O
15
NC V
SS
A
1
V
SS
I/O
0
NC
PNC I/O
P2
V
SS
A
0
V
SS
NC I/O
P1
RNC A
5
LBO V
DD
NCA
12
V
SS
TNC A
10
A
15
NC A
14
A
11
ZZ
(3)
UV
DDQ
V
DDQ
5280 drw 02d
NC
V
SS
V
SS
,
NC/TMS
(2)
NC/TDI
(2)
NC/TCK
(2)
NC/TDO
(2)
NC/TRST
(2,4)
Pin Configuration – 256K x 18, 119 BGA
Pin Configuration – 128K x 36, 119 BGA
Top View
Top View
NOTES:
1. R5 does not have to be directly connected to VSS as long as the input voltage is < VIL.
2. These pins are NC for the "S" version or the JTAG signal listed for the "SA" version. Note: If NC, these pins can either be tied to VSS, VDD or left floating.
3. T7 can be left unconnected and the device will always remain in active mode.
4. TRST is offered as an optional JTAG Reset if required in the application. If not needed, can be left floating and will internally be pulled to VDD.
1234567
AV
DDQ
A
6
A
4
ADSP A
8
A
16
V
DDQ
BNC CS
0
A
3
ADSC A
9
CS
1
NC
CA
7
A
2
V
DD
A
12
A
15
NC
DI/O
16
I/O
P3
V
SS
NC V
SS
I/O
P2
I/O
15
EI/O
17
I/O
18
V
SS
CE V
SS
I/O
13
I/O
14
FV
DDQ
I/O
19
V
SS
OE V
SS
I/O
12
V
DDQ
GI/O
20
I/O
21
BW
3
ADV BW
2
I/O
11
I/O
10
HI/O
22
I/O
23
V
SS
GW V
SS
I/O
9
I/O
8
JV
DDQ
V
DD
NC V
DD
NC V
DD
V
DDQ
KI/O
24
I/O
26
V
SS
CLK V
SS
I/O
6
I/O
7
LI/O
25
I/O
27
BW
4
NC BW
1
I/O
4
I/O
5
M
V
DDQ
I/O
28
V
SS
BWE V
SS
I/O
3
V
DDQ
NI/O
29
I/O
30
V
SS
A
1
V
SS
I/O
2
I/O
1
PI/O
31
I/O
P4
V
SS
A
0
V
SS
I/O
0
I/O
P1
RNC A
5
LBO V
DD
NCA
13
TNC NC A
10
A
11
A
14
NC ZZ
(3)
UV
DDQ
V
DDQ
NC
V
SS
5280 drw 02c
NC/TMS
(2)
NC/TDI
(2)
NC/TCK
(2)
NC/TDO
(2)
NC/TRST
(2,4)
6.428
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Pin Configuration – 256K x 18, 165 fBGA
Pin Configuration – 128K x 36, 165 fBGA
NOTES:
1. H1 does not have to be directly VSS as long as input voltage is < VIL
2. These pins are NC for the "S" version or the JTAG signal listed for the "SA" version. Note: If NC, these pins can either be tied to VSS, VDD or left floating.
3. H11 can be left unconnected and the device will always remain in active mode.
4. Pins P11, N6, B11, A1, R2 and P2 are reserved for 9M, 18M, 36M, 72M, 144M and 288M respectively.
5. TRST is offered as an optional JTAG Reset if required in the application. If not needed, can be left floating and will internally be pulled to VDD.
1234567891011
ANC
(4)
A
7
CE
1
BW
3
BW
2
CS
1
BWE ADSC ADV A
8
NC
BNC A
6
CS
0
BW
4
BW
1
CLK GW OE ADSP A
9
NC
(4)
CI/O
P3
NC V
DDQ
V
SS
V
SS
V
SS
V
SS
V
SS
V
DDQ
NC I/O
P2
DI/O
17
I/O
16
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
15
I/O
14
EI/O
19
I/O
18
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
13
I/O
12
FI/O
21
I/O
20
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
11
I/O
10
GI/O
23
I/O
22
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
9
I/O
8
HV
SS
(1)
NC NC V
DD
V
SS
V
SS
V
SS
V
DD
NC NC ZZ
(3)
JI/O
25
I/O
24
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
7
I/O
6
KI/O
27
I/O
26
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
5
I/O
4
LI/O
29
I/O
28
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
3
I/O
2
MI/O
31
I/O
30
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
1
I/O
0
NI/O
P4
NC V
DDQ
V
SS NC/TRST
(2,5)
NC
(4)
NC V
SS
V
DDQ
NC I/O
P1
PNCNC
(4)
A
5
A
2
NC/TDI
(2)
A
1
NC/TDO
(2)
A
10
A
13
A
14
NC
(4)
RLBO NC
(4)
A
4
A
3
NC/TMS
(2)
A
0
NC/TCK
(2)
A
11
A
12
A
15
A
16
5280 tb l 17
1234567891011
ANC
(4)
A
7
CE
1
BW
2
NC CS
1
BWE ADSC ADV A
8
A
10
BNC A
6
CS
0
NC BW
1
CLK GW OE ADSP A
9
NC
(4)
CNC NCV
DDQ
V
SS
V
SS
V
SS
V
SS
V
SS
V
DDQ
NC I/O
P1
DNC I/O
8
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
NC I/O
7
ENC I/O
9
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
NC I/O
6
FNCI/O
10
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
NC I/O
5
GNC I/O
11
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
NC I/O
4
HV
SS
(1)
NC NC V
DD
V
SS
V
SS
V
SS
V
DD
NC NC ZZ
(3)
JI/O
12
NC V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
3
NC
KI/O
13
NC V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
2
NC
LI/O
14
NC V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
1
NC
MI/O
15
NC V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
I/O
0
NC
NI/O
P2
NC V
DDQ
V
SS NC/TRST
(2,5)
NC
(4)
NC V
SS
V
DDQ
NC NC
PNC NC
(4)
A
5
A
2
NC/TDI
(2)
A
1
NC/TDO
(2)
A
11
A
14
A
15
NC
(4)
RLBO NC
(4)
A
4
A
3
NC/TMS
(2)
A
0
NC/TCK
(2)
A
12
A
13
A
16
A
17
5280 tb l 17a
6.42
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
9
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (1)
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 5%)
Figure 2. Lumped Capacitive Load, Typical Derating
Figure 1. AC Test Load
AC Test LoadAC Test Conditions
(VDDQ = 3.3V)
NOTE:
1. The LBO, TMS, TDI, TCK and TRST pins will be internally pulled to VDD and the ZZ in will be internally pulled to VSS if they are not actively driven in the application.
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC while ADSC = LOW; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V.
V
DDQ
/2
50Ω
I
/O Z
0
=50Ω
5280 drw 03
,
Symbol Parameter Test Condi ti ons Min. Max. Unit
|I
LI
| Input Le ak ag e Curre nt V
DD
= Max., V
IN
= 0V to V
DD
___
5µA
|I
LI
|ZZ , LBO and J TAG Inp ut Le akag e Curre nt
(1)
V
DD
= Max., V
IN
= 0V to V
DD
___
30 µA
|I
LO
| Output Leakage Current V
OUT
= 0V to V
DDQ
, Device Deselected
___
5µA
V
OL
Output Lo w Vo ltage I
OL
= +8mA, V
DD
= Min.
___
0.4 V
V
OH
Outp ut Hig h Voltage I
OH
= -8mA, V
DD
= Min. 2.4
___
V
5280 tbl 08
Symbol Parameter Test Conditions
7.5ns 8ns 8.5ns
UnitCom'l Only Co m'l I nd Com 'l Ind
I
DD
Operating Power Supply Current Device Selected, Outputs Open, V
DD
= Max.,
V
DDQ
= Max., V
IN
> V
IH
or < V
IL
, f = f
MAX
(2)
255 200 210 180 190 mA
I
SB1
CMOS Standby Power
Supply Current Device Deselected, Outputs Open, V
DD
= Max.,
V
DDQ
= Max., V
IN
> V
HD
or < V
LD
, f = 0
(2,3)
30 30 35 30 35 mA
I
SB2
Cl o ck Running Po we r
Supply Current Device Deselected, Outputs Open, V
DD
= Max.,
V
DDQ
= Max., V
IN
> V
HD
or < V
LD
, f = f
MAX
(2,.3)
90 85 95 80 90 mA
I
ZZ
Full Sleep Mode Supply Current ZZ > V
HD,
V
DD
= Max . 30 30 35 30 35 mA
5280 tbl 09
Inp ut Pul s e L e ve ls
Inp ut Ris e /Fal l Tim e s
Inp ut Ti ming Re fe re nc e Le v e ls
Output Timing Re fe rence Le ve ls
AC Test Load
0 to 3V
2ns
1.5V
1.5V
See Figure 1
5280 t b l 10
1
2
3
4
20 30 50 100 200
∆tCD
(Typical, ns)
Capacitance (pF)
80
5
6
5280 drw 05
,
6.4210
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Synchronous Truth Table (1,3)
NOTES:
1 . L = VIL, H = VIH, X = Don’t Care.
2. OE is an asynchronous input.
3. ZZ - low for the table.
Operation Address
Used
CE CS
0
CS
1
ADSP ADSC ADV GW BWE BWxOE
(2)
CLK I/O
De se l e c te d Cy c le , Po we r Do wn No ne H X X X L X X X X X ↑HI-Z
De se l e c te d Cy c le , Po we r Do wn No ne L X H L X X X X X X ↑HI-Z
De se l e c te d Cy c le , Po we r Do wn No ne L L X L X X X X X X ↑HI-Z
De se l e c te d Cy c le , Po we r Do wn No ne L X H X L X X X X X ↑HI-Z
De se l e c te d Cy c le , Po we r Do wn No ne L L X X L X X X X X ↑HI-Z
Read Cycle, Begin Burst External L H L L X X X X X L ↑D
OUT
Read Cycle, Begin Burst External L H L L X X X X X H ↑HI-Z
Read Cycle, Begin Burst External L H L H L X H H X L ↑D
OUT
Read Cycle, Begin Burst External L H L H L X H L H L ↑D
OUT
Read Cycle, Begin Burst External L H L H L X H L H H ↑HI-Z
Write Cycle, Begin Burst External L H L H L X H L L X ↑D
IN
Write Cycle, Begin Burst External L H L H L X L X X X ↑D
IN
Read Cycle, Continue B urst Next X X X H H L H H X L ↑D
OUT
Read Cycle, Continue B urst Next X X X H H L H H X H ↑HI-Z
Read Cycle, Continue B urst Next X X X H H L H X H L ↑D
OUT
Read Cycle, Continue B urst Next X X X H H L H X H H ↑HI-Z
Read Cycle, Continue B urst Next H X X X H L H H X L ↑D
OUT
Read Cycle, Continue B urst Next H X X X H L H H X H ↑HI-Z
Read Cycle, Continue B urst Next H X X X H L H X H L ↑D
OUT
Read Cycle, Continue B urst Next H X X X H L H X H H ↑HI-Z
Write Cycle, Continue Burst Next X X X H H L H L L X ↑D
IN
Write Cycle, Continue Burst Next X X X H H L L X X X ↑D
IN
Write Cycle, Continue Burst Next H X X X H L H L L X ↑D
IN
Write Cycle, Continue Burst Next H X X X H L L X X X ↑D
IN
Read Cycle, Suspend Burst Current X X X H H H H H X L ↑D
OUT
Read Cycle, Suspend Burst Current X X X H H H H H X H ↑HI-Z
Read Cycle, Suspend Burst Current X X X H H H H X H L ↑D
OUT
Read Cycle, Suspend Burst Current X X X H H H H X H H ↑HI-Z
Read Cycle, Suspend Burst Current H X X X H H H H X L ↑D
OUT
Read Cycle, Suspend Burst Current H X X X H H H H X H ↑HI-Z
Read Cycle, Suspend Burst Current H X X X H H H X H L ↑D
OUT
Read Cycle, Suspend Burst Current H X X X H H H X H H ↑HI-Z
Write Cycle, Suspe nd Burst Current X X X H H H H L L X ↑D
IN
Write Cycle, Suspe nd Burst Current X X X H H H L X X X ↑D
IN
Write Cycle, Suspe nd Burst Current H X X X H H H L L X ↑D
IN
Write Cycle, Suspe nd Burst Current H X X X H H L X X X ↑D
IN
5280 tbl 11
6.42
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
11
Linear Burst Sequence Table ( LBO=VSS)
Synchronous Write Function Truth Table (1, 2)
Asynchronous Truth Table
(1)
Interleaved Burst Sequence Table ( LBO=VDD)
NOTES:
1 . L = VIL, H = VIH, X = Don’t Care.
2. BW3 and BW4 are not applicable for the IDT71V3579.
3. Multiple bytes may be selected during the same cycle.
NOTES:
1 . L = VIL, H = VIH, X = Don’t Care.
2. Synchronous function pins must be biased appropriately to satisfy operation requirements.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
Operation GW BWE BW
1
BW
2
BW
3
BW
4
Read HHXXXX
Read HLHHHH
Write all Bytes LXXXXX
Write all Bytes HLLLLL
Wr ite B yte 1
(3)
HLLHHH
Wr ite B yte 2
(3)
HLHLHH
Wr ite B yte 3
(3)
HLHHLH
Wr ite B yte 4
(3)
HLHHHL
5280 t bl 12
Operation
(2)
OE ZZ I/O Status Power
Re ad L L Data Out Active
Read H L High-Z Active
Wr i te X L Hi gh-Z – D ata In A c ti v e
Deselected X L High-Z Standby
Sleep Mode X H High-Z Sleep
5280 t bl 13
Sequence 1 Sequence 2 Sequence 3 Sequence 4
A1 A0 A1 A0 A1 A0 A1 A0
First Address 000 110 11
Second Address 0 1 0 0 1 1 1 0
Third Address 1 0 1 1 0 0 0 1
Fourth Address
(1)
11100100
5280 t bl 14
Sequence 1 Sequence 2 Sequence 3 Sequence 4
A1 A0 A1 A0 A1 A0 A1 A0
First Address 000 110 11
Second Address 0 1 1 0 1 1 0 0
Third Address 1 0 1 1 0 0 0 1
Fourth Address
(1)
11000110
5280 t bl 15
6.4212
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VDD = 3.3V ±5%, Commercial and Industrial Temperature Ranges)
7.5ns
(5)
8ns 8.5ns
Symbol Parameter Min.Max.Min.Max.Min.Max.Unit
Clock P aram eter
t
CYC
Clock Cycle Time 8.5
____
10
____
11.5
____
ns
t
CH
(1)
Clock High Pulse Width 3
____
4
____
4.5
____
ns
t
CL
(1)
Clock Low Pulse Width 3
____
4
____
4.5
____
ns
Output Parameters
t
CD
Cl ock Hi gh to Vali d Data
____
7.5
____
8
____
8.5 ns
t
CDC
Clo ck Hig h to Data Chang e 2
____
2
____
2
____
ns
t
CLZ
(2)
Clock High to Output Active 0
____
0
____
0
____
ns
t
CHZ
(2)
Clo ck Hig h to Data Hig h-Z 2 3. 5 2 3. 5 2 3. 5 ns
t
OE
Output Enable Access Time
____
3.5
____
3.5
____
3.5 ns
t
OLZ
(2)
Outp ut Enable Low to Output Active 0
____
0
____
0
____
ns
t
OHZ
(2)
Output E nab le Hig h to Outp ut Hig h-Z
____
3.5
____
3.5
____
3.5 ns
Set Up Times
t
SA
Address Setup Time 1.5
____
2
____
2
____
ns
t
SS
Address Status Setup Time 1.5
____
2
____
2
____
ns
t
SD
Data In Se tup Time 1. 5
____
2
____
2
____
ns
t
SW
Wri te Se tup Ti me 1. 5
____
2
____
2
____
ns
t
SAV
Address Advance Setup Time 1.5
____
2
____
2
____
ns
t
SC
Chip Enable/Select Setup Time 1.5
____
2
____
2
____
ns
Hold Times
t
HA
Address Hold Time 0.5
____
0.5
____
0.5
____
ns
t
HS
Ad dress Status Hold Time 0.5
____
0.5
____
0.5
____
ns
t
HD
Data In Ho ld Tim e 0. 5
____
0.5
____
0.5
____
ns
t
HW
Write Hold Time 0.5
____
0.5
____
0.5
____
ns
t
HAV
Address Advance Hold Time 0.5
____
0.5
____
0.5
____
ns
t
HC
Chip Enable/Select Hold Time 0.5
____
0.5
____
0.5
____
ns
Sleep Mode and Co nfiguration Parameters
t
ZZPW
ZZ Pulse Width 100
____
100
____
100
____
ns
t
ZZR
(3)
ZZ Recovery Time 100
____
100
____
100
____
ns
t
CFG
(4)
Config uration Set-up Time 34
____
40
____
50
____
ns
5280 tbl 16
NOTES:
1. Measured as HIGH above VIH and LOW below VIL.
2. Transition is measured ±200mV from steady-state.
3. Device must be deselected when powered-up from sleep mode.
4. tCFG is the minimum time required to configure the device based on the LBO input. LBO is a static input and must not change during normal operation.
5. Commercial temperature range only.
6.42
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
13
NOTES:
1. O1 (Ax) represents the first output from the external address Ax. O1 (Ay) represents the first output from the external address Ay; O2 (Ay) represents the next output data in the burst sequence
of the base address Ay, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
2. ZZ input is LOW and LBO is Don't Care for this cycle.
3. CS0 timing transitions are identical but inverted to the CE and CS1 signals. For example, when CE and CS1 are LOW on this waveform, CS0 is HIGH.
Timing Waveform of Flow-Through Read Cycle (1,2)
t
CHZ
t
SA
t
SC
t
HS
G
W,BWE,BWx
t
SW
t
CL
t
SAV
t
HW
t
HAV
CLK
ADSP
ADSC
(1)
ADDRESS
t
CYC
t
CH
t
HA
t
HC
t
OE
t
OHZ
OEt
CD
t
OLZ
O1(Ax)
DATA
OUT
t
CDC
O1(Ay)O2(Ay)
O2(Ay)
ADV
CE,CS
1
(Note3)
Flow-through
Read
BurstFlow-throughRead
Output
Disabled
AxAy
t
SS
O1(Ay)
O4(Ay)
O3(Ay)
(Burstwrapsaround
to its initialstate)
5280drw0
6
ADVHIGHsuspendsburst
,
6.4214
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
O1(Az)
CLK
ADSP
A
DDRESS
GW
ADV
OE
DATA
OUT
t
CYC
t
CH
t
CL
t
HA
t
SW
t
HW
t
CLZ
AxAyAz
t
HS
I1(Ay)
t
SD
t
HD
t
OLZ
t
CD
t
CDC
DATA
IN
(2)
t
OE
O1(Az)
Single ReadFlow-throughBurstRead
Write
t
OHZ
t
SS
t
SA
O3(Az)
O2(Az)O4(Az)
O1(Ax)
5280drw0
7
t
CD
,
NOTES:
1. Device is selected through entire cycle; CE and CS1 are LOW, CS0 is HIGH.
2. ZZ input is LOW and LBO is Don't Care for this cycle.
3. O1 (Ax) represents the first output from the external address Ax. I1 (Ay) represents the first input from the external address Ay; O1 (Az) represents the first output from the external address Az; O2 (Az) represents
the next output data in the burst sequence of the base address Az, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
Timing Waveform of Combined Flow-Through Read and Write Cycles (1,2,3)
6.42
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
15
Timing Waveform of Write Cycle No. 1 - GW Controlled (1,2,3)
A
DDRESS
CLK
ADSP
ADSC
t
CYC
t
SS
t
HS
t
CH
t
CL
t
HA
t
SA
AxAyAz
ADV
DATA
OUT
OE
t
HC
t
SD
I1(Ax)I1(Az)
I2(Ay)
tHD
t
OHZ
DATA
IN
t
HAV
O4(Aw)
CE,CS
1
t
HW
GW
t
SW
(Note3)
I2(Az)I3(Az)
I4(Ay)
I3(Ay)
I2(Ay)
t
SAV
(ADVsuspendsburst)
I1(Ay)
t
SC
(1)
(2)
O3(Aw)
5280drw0
8
GWis ignoredwhenADSPinitiatesacycle andis sampledonthenextcyclerisingedge
,
NOTES:
1. ZZ input is LOW, BWE is HIGH and LBO is Don't Care for this cycle.
2. O4 (Aw) represents the final output data in the burst sequence of the base address Aw. I1 (Ax) represents the first input from the external address Ax. I1 (Ay) represents the first input from the external
address Ay; I2 (Ay) represents the next input data in the burst sequence of the base address Ay, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the
LBO input. In the case of input I2 (Ay) this data is valid for two cycles because ADV is high and has suspended the burst.
3. CS0 timing transitions are identical but inverted to the CE and CS1 signals. For example, when CE and CS1 are LOW on this waveform, CS0 is HIGH.
6.4216
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 2 - Byte Controlled (1,2,3)
A
DDRESS
CLK
ADSP
ADSC
t
CYC
t
SS
t
HS
t
CH
t
CL
t
HA
t
SA
AxAy
t
HW
BWx
ADV
DATA
OUT
OE
t
HC
t
SD
Single
Write BurstWrite
I1(Ax)I2(Ay)I2(Ay)I2(Az)
tHD
Burst
ReadExtended
BurstWrite
t
OHZ
DATA
IN
t
SAV
t
SW
O4(Aw)
CE,CS
1
t
HW
BWEt
SW
(Note 3)
I1(Az)
Az
I4(Ay)
I1(Ay)I4(Ay)
I3(Ay)
t
SC
BWEis ignoredwhenADSPinitiatesacycle andis sampledonthenextcycle risingedge
BWxis ignoredwhenADSPinitiatesacycle andis sampledonthenextclockrisingedge
I3(Az)
O3(Aw)
5280drw09
(ADVHIGHsuspendsburst)
,
NOTES:
1. ZZ input is LOW, GW is HIGH and LBO is Don't Care for this cycle.
2. O4 (Aw) represents the final output data in the burst sequence of the base address Aw. I1 (Ax) represents the first input from the external address Ax. I1 (Ay) represents the first input from the external
address Ay; I2 (Ay) represents the next input data in the burst sequence of the base address Ay, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the
LBO input. In the case of input I2 (Ay) this data is valid for two cycles because ADV is high and has suspended the burst.
3. CS0 timing transitions are identical but inverted to the CE and CS1 signals. For example, when CE and CS1 are LOW on this waveform, CS0 is HIGH.
6.42
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
17
t
CYC
t
SS
t
CL
t
CH
t
HA
t
SA
t
SC
t
HC
t
OE
t
OLZ
t
HS
CLK
ADSP
ADSC
A
DDRESS
GW
CE,CS
1
ADV
DATA
OUT
OE
ZZ
Single ReadSnoozeMode
tZZPW
5280drw13
O1(Ax)
Ax
(Note4)
tZZR
Az
,
NOTES:
1. Device must power up in deselected Mode.
2. LBO is Don't Care for this cycle.
3. It is not necessary to retain the state of the input registers throughout the Power-down cycle.
4. CS0 timing transitions are identical but inverted to the CE and CS1 signaals. For example, when CE and CS1 are LOW on this waveform, CS0 is HIGH.
Timing Waveform of Sleep (ZZ) and Power-Down Modes (1,2,3)
6.4218
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
NOTES:
1. ZZ input is LOW, ADV is HIGH and LBO is Don't Care for this cycle.
2. (Ax) represents the data for address Ax, etc.
3. For read cycles, ADSP and ADSC function identically and are therefore interchangable.
Non-Burst Read Cycle Timing Waveform
CLK
ADSP
GW,BWE,BWx
CE,CS1
CS0
ADDRESS
ADSC
DATAOUT
OE
Av Aw Ax Ay Az
(Av) (Aw) (Ax) (Ay)
5280 drw 10
,
Non-Burst Write Cycle Timing Waveform
CLK
ADSP
GW
CE,CS
1
CS
0
ADDRESS
ADSC
DATA
IN
Av Aw Ax AzAy
(Av) (Aw) (Ax) (Az)(Ay)
5280 drw 11
,
NOTES:
1. ZZ input is LOW, ADV and OE are HIGH, and LBO is Don't Care for this cycle.
2. (Ax) represents the data for address Ax, etc.
3. Although only GW writes are shown, the functionality of BWE and BWx together is the same as GW.
4. For write cycles, ADSP and ADSC have different limitations.
6.42
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
19
JTAG Interface Specification (SA Version only)
TCK
Device Inputs
(1)
/
TDI/TMS
Device Outputs
(2)
/
TDO
TRST
(3)
t
JCD
t
JDC
t
JRST
t
JS
t
JH
t
JCYC
t
JRSR
t
JF
t
JCL
t
JR
t
JCH
M5280 drw 01
x
Symbol Parameter Min. Max. Units
t
JCYC
JTAG Clock Input Period 100
____
ns
t
JCH
JTAG Clock HIGH 40
____
ns
t
JCL
JTAG Clock Low 40
____
ns
t
JR
JTAG Clock Rise Time
____
5
(1)
ns
t
JF
JTAG Clock Fall Time
____
5
(1)
ns
t
JRST
JTAG Reset 50
____
ns
t
JRSR
JTAG Reset Recovery 50
____
ns
t
JCD
J TA G Data O utp ut
____
20 ns
t
JDC
JTAG Data Output Hold 0
____
ns
t
JS
JTAG Setup 25
____
ns
t
JH
JTAG Hold 25
____
ns
I5 2 80 tb l 01
Reg i ster Nam e Bi t S i ze
Instruction (IR) 4
Bypass (BYR) 1
JTA G Id entific atio n (JIDR) 32
B ound ary Scan (BSR) Note (1)
I5280 tbl 03
NOTES:
1. Device inputs = All device inputs except TDI, TMS and TRST.
2. Device outputs = All device outputs except TDO.
3. During power up, TRST could be driven low or not be used since the JTAG circuit resets automatically. TRST is an optional JTAG reset.
NOTE:
1. The Boundary Scan Descriptive Language (BSDL) file for this device is available
by contacting your local IDT sales representative.
JTAG AC Electrical
Characteristics(1,2,3,4)
Scan Register Sizes
NOTES:
1. Guaranteed by design.
2. AC Test Load (Fig. 1) on external output signals.
3. Refer to AC Test Conditions stated earlier in this document.
4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet.
6.4220
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and TRST.
Instruction Field Value Description
Revision Number (31:28) 0x2 Rese rved fo r v ersion numb er.
IDT Devic e ID (27:12) 0x22C, 0x22E De fines IDT part numb er 71V3577SA and 71V3579SA, re sp ec tively.
IDT J EDEC ID (11: 1) 0x 33 Allo ws u ni q ue id entifi c ation o f d e v ice v e nd o r as IDT.
ID Register Indicator Bit (Bit 0) 1 Indicates the presence of an ID register.
I5280 tbl 02
JTAG Identification Register Definitions (SA Version only)
Instruction Description OPCODE
EXTEST Forces contents of the boundary scan cells onto the device outputs
(1)
.
Places the b oundary scan re giste r (BSR) between TDI and TDO. 0000
SAMPLE/PRELOAD
Places the b oundary scan re giste r (BSR) between TDI and TDO.
SAMPLE allows data from device inputs
(2)
and outputs
(1)
to be captured
in the bo undary scan cells and shifted serially thro ugh TDO. P RELOAD
allow s d ata to b e inp ut se rially into the b ound ary sc an cells v ia the TDI.
0001
DEVICE_ID Load s the JTAG ID register (J IDR) with the vendor ID co de and places
the register between TDI and TDO. 0010
HIGHZ Places the bypass register (BYR) between TDI and TDO. Forces all
de vice output d riv ers to a High-Z state. 0011
RESERVED
S ev e ral co mbi nations a re r ese rv e d. Do n o t us e c ode s o ther than tho se
ide nti fied fo r E XTES T, SA MP LE/ PRE LOA D, DE VICE_ID, HIGHZ, CLA MP,
VALIDATE and BYPASS ins tructions.
0100
RESERVED 0101
RESERVED 0110
RESERVED 0111
CLAMP Uses BYR. Forces contents of the bound ary scan cells onto the device
outputs. Places the byp ass registe r (BYR) between TDI and TDO. 1000
RESERVED
Same as ab ove.
1001
RESERVED 1010
RESERVED 1011
RESERVED 1100
VALIDATE Automatically loaded into the instruction register whenever the TAP
contro lle r p asses throug h the CAPTURE-IR state. The lower two bits '01'
are m andate d b y the IEE E std . 1149. 1 s peci fication. 1101
RESERV ED Same as ab ove. 1110
BYPASS The BYPASS instructio n is used to truncate the boundary scan register
as a s ingle b it in length. 1111
I5 2 80 tbl 04
Available JTAG Instructions
6.42
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
21
Ordering Information
100-pin Plastic Thin Quad Flatpack (TQFP)
119 Ball Grid Array (BGA)
165 Fine Pitch Ball Grid Array (fBGA)
S
Power
X
Speed
XX
Package
PF**
BG
BQ
XXX
75*
80
85 Access Time in Tenths of Nanoseconds
5280 drw 12
Device
Type
71V3577
71V3579 128K x 36 Flow-Through Burst Synchronous SRAM with 3.3V I/O
256K x 18 Flow-Through Burst Synchronous SRAM with 3.3V I/O
,
X
Process/
Temperature
Range
Commercial (0°C to +70°C)
Industrial (-40°Cto +85°C)
Blank
I
*Commercial temperature range only.
** JTAG (SA version) is not available with 100 pin TQFP package
X
S
SA
Blank
Y
Standard Power
Standard Power with JTAG Interface
First Generation or current stepping
Second Generation die step
X
Restricted hazardous substance device
G
Package Information
100-Pin Thin Quad Plastic Flatpack (TQFP)
119 Ball Grid Array (BGA)
165 Fine Pitch Ball Grid Array (fBGA)
Information available on the IDT website
6.4222
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
Datasheet Document History
7/23/99 Updated to new format
9/17/99 Pg. 2 Revised I/O pin description
Pg. 3 Revised block diagram for flow-through functionality
Pg. 8 Revised ISB1 and IZZ for speeds 7.5 to 8.5ns
Pg. 18 Added 119-lead BGA package diagram
Pg. 20 Added Datasheet Document History
12/31/99 Pp. 1, 4, 8, 11, 19 Added Industrial Temperature range offerings
04/03/00 Pg. 18 Added 100pinTQFP Package Diagram Outline
Pg. 4 Add capacitance table for BGA package; add Industrial temperature to table; Insert note to
Absolute Max Ratings and Recommended Operating Temperature tables
06/01/00 Add new package offering, 13 x 15mm 165 fBGA
Pg. 20 Correct 119BGA Package Diagram Outline
07/15/00 Pg. 7 Add note reference to BG119 pinout
Pg. 8 Add DNU reference note to BQ165 pinout
Pg. 20 Update BG119 Package Diagram Outline Dimensions
10/25/00 Remove Preliminary status
Pg.8 Add reference note to pin N5 on BQ165 pinout, reserved for JTAG TRST
04/22/03 Pg.4 Updated 165 BGA table information from TBD to 7
06/30/03 Pg. 1,2,3,5-9 Updated datasheet with JTAG information
Pg. 5-8 Removed note for NC pins (38,39(PF package); L4, U4 (BG package) H2, N7 (BQ package))
requiring NC or connection to Vss.
Pg. 19,20 Added two pages of JTAG Specification, AC Electrical, Definitions and Instructions
Pg. 21-23 Removed old package information from the datasheet
Pg. 24 Updated ordering information with JTAG and Y stepping information. Added information
regarding packages available IDT website.
01/ /04 Pg. 21 Addedd "restricted hazardous substance device" to ordering information.
CORPORATE HEADQUARTERS for SALES: for Tech Support:
6024 Silver Creek Valley Road 800-345-7015 or ipchelp@idt.com
San Jose, CA 95138 408-284-8200 800-345-7015
fax: 408-284-2775
www.idt.com
