GBU4A thru GBU4M
Vishay General Semiconductor
Document Number: 88614
Revision: 22-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
UL recognition file number E54214
Ideal for printed circuit boards
High surge current capability
High case dielectric strength of 1500 VRMS
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, switching mode
power supply, adapter, audio equipment, and home
appliances applications.
MECHANICAL DATA
Case: GBU
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
PRIMARY CHARACTERISTICS
IF(AV) 4 A
VRRM 50 V to 1000 V
IFSM 150 A
IR5 µA
VF1.0 V
TJ max. 150 °C
Case Style GBU
Notes:
(1) Unit case mounted on 1.6 x 1.6 x 0.06" thick (4.0 x 4.0 x 0.15 cm) aluminum plate
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward
rectified output current at
TC = 100 °C (1)
TA = 40 °C (2) IF(AV) 4.0
3.0 A
Peak forward surge current single sine-wave
superimposed on rated load IFSM 150 A
Rating for fusing (t < 8.3 ms) I2t 93 A2s
Operating junction and
storage temperature range TJ, TSTG - 55 to + 150 °C
GBU4A thru GBU4M
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88614
Revision: 22-Jan-08
2
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT
Maximum
instantaneous
forward drop per diode
4.0 A VF 1.0 V
Maximum DC
reverse current at
rated DC blocking
voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
500 µA
Typical junction
capacitance per diode 4.0 A, 1 MHz CJ 100 45 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT
Typical thermal resistance RθJA (2)
RθJC (1)
22
4.2 °C/W
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GBU4J-E3/45 3.565 45 20 Tube
GBU4J-E3/51 3.565 51 250 Paper tray
Figure 1. Derating Curve Output Rectified Current
050 100 150
0
1.0
2.0
3.0
4.0
Temperature (°C)
Average Forward Output Current (A)
Heatsink Mounting, TC
1.6 x 1.6 x 0.06" Thickness
(4.0 x 4.0 x 0.15 cm) Al. Plate
P.C.B. Mounting, TA
0.47 x 0.47" (12 x 12 mm) Copper Pads
0.375" (9.5 mm) Lead Length
60 Hz Resistive or Inductive Load
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
110 100
0
50
100
150
1.0 Cycle
TJ = TJ max.
Single Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
GBU4A thru GBU4M
Vishay General Semiconductor
Document Number: 88614
Revision: 22-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.4 0.6 0.81.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80100
0.01
0.1
1
10
100
1000
50 - 400 V
600 - 1000 V
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 125 °C
T
J
= 25 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance
0.1 110 100
10
100
1000
50 - 400 V
600 - 1000 V
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 0.1 110 100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Type GBU
Polarity shown on front side of case, positive lead by beveled corner
0.125 (3.2) x 45°
Chamfer
0.085 (2.16)
0.065 (1.65)
0.020 R (TYP.)
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.075
(1.9) R
.
0.080(2.03)
0.060 (1.52)
0.050 (1.27)
0.040 (1.02)
0.080 (2.03)
0.065 (1.65) 0.210 (5.33)
0.190 (4.83)
0.140 (3.56)
0.130 (3.30)
9° TYP.
5° TYP.
0.085 (2.16)
0.075 (1.90)
0.022 (0.56)
0.018 (0.46)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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