DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3112 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3112 TO-220AB 2SK3112-S TO-262 2SK3112-ZJ TO-263(MP-25ZJ) and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES * Gate voltage rating 30 V * Low on-state resistance RDS(on) = 110 m MAX. (VGS = 10 V, ID = 13 A) * Low input capacitance (TO-220AB) Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V) * Avalanche capability rated * Built-in gate protection diode * Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 200 V Gate to Source Voltage (VDS = 0 V) VGSS 30 V Drain Current (DC) (TC = 25C) ID(DC) 25 A ID(pulse) 75 A PT1 100 W Drain Current (pulse) Note1 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) PT2 1.5 W Channel Temperature Tch 150 C Tstg -55 to +150 C IAS 25 A EAS 250 mJ Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 (TO-262) (TO-263) Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 100 V, RG = 25 , VGS = 20 V0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13335EJ1V0DS00 (1st edition) Date Published May 2001 NS CP (K) Printed in Japan (c) 1998,2001 2SK3112 ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit 100 A 10 A 4.5 V Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V Gate Leakage Current IGSS VGS = 30 V, VDS = 0 V Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 Forward Transfer Admittance | yfs | VDS = 10 V, ID = 13 A 6.0 Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 13 A Input Capacitance Ciss VDS = 10 V 1600 pF Output Capacitance Coss VGS = 0 V 430 pF Reverse Transfer Capacitance Crss f = 1 MHz 280 pF Turn-on Delay Time td(on) VDD = 100 V , ID = 13 A 35 ns Rise Time tr VGS = 10 V 140 ns Turn-off Delay Time td(off) RG = 10 110 ns Fall Time tf 70 ns Total Gate Charge QG VDD = 160 V 60 nC Gate to Source Charge QGS VGS = 10 V 11 nC Gate to Drain Charge QGD ID = 25 A 40 nC Body Diode Forward Voltage VF(S-D) IF = 25 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 25 A, VGS = 0 V 300 ns Reverse Recovery Charge Qrr di/dt = 50 A/s 1.8 C TEST CIRCUIT 1 AVALANCHE CAPABILITY S 76 110 m TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 D.U.T. L RL PG. 50 VDD VGS = 20 V 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch = 1 s Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 VDD 10% 0 10% Wave Form VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D13335EJ1V0DS tr td(off) td(on) ton tf toff 2SK3112 TYPICAL CHARACTERISTICS (TA = 25C) 1000 70 100 ID - Drain Current - A 80 60 50 40 30 20 10 0 5 10 15 20 25 10 Tch = 125C 75C 25C -25C 1 0.1 0.01 0.001 VGS = 10 V Pulsed 0 VGS(off) - Gate Cut-off Voltage - V FORWARD TRANSFER CHARACTERISTICS VDS = 10 V Pulsed 0.0001 30 0 2 4 10 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 5.0 4.0 3.0 2.0 1.0 -50 -25 0 25 50 75 100 125 150 100 Tch = -25C 25C 75C 125C 10 1 0.1 0.01 0.01 0.1 ID = 25 A 13 A 5A 0.3 0.2 0.1 0 12 16 VGS - Gate to Source Voltage - V 20 RDS(on) - Drain to Source On-state Resistance - 0.4 8 10 1 100 ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.5 Pulsed 4 12 VDS = 10 V Pulsed Tch - Channel Temperature - C RDS(on) - Drain to Source On-state Resistance - 8 VGS - Gate to Source Voltage - V VDS = 10 V ID = 1 mA 0 6 VDS - Drain to Source Voltage - V |yfs| - Forward Transfer Admittance - S ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.6 VGS = 10 V Pulsed 0.5 0.4 0.3 0.2 0.1 0 0.1 1 10 100 ID - Drain Current - A Data Sheet D13335EJ1V0DS 3 2SK3112 RDS (on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 150 ID = 25 A 13 A 100 50 0 -50 0 VGS = 10 V Pulsed 100 150 50 ISD - Diode Forward Current - A 100 200 VGS = 10 V 10 1 0V 0.1 Pulsed 0.01 0 Tch - Channel Temperature - C td(on), tr, td(off), tf - Switching Time - ns 1000 Ciss Coss 100 Crss VGS = 0 V f = 1 MHz 10 0.1 1 10 100 td(off) 100 tf td(on) tr 10 1 0.1 1000 1 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DIODE CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 10 di/dt = 50 A/ s VGS = 0 V 1 10 VDS - Drain to Source Voltage - V 240 100 1 0.1 VDD = 100 V VGS = 10 V RG = 10 10 100 100 IF - Diode Current - A 12 200 10 VGS VDD = 160 V 100 V 40 V 160 8 120 6 80 4 VDS 40 2 ID = 25 A 0 0 0 10 20 30 40 50 QG - Gate Charge - nC Data Sheet D13335EJ1V0DS 60 70 VGS - Gate to Source Voltage - V 1000 trr - Reverse Recovery Time - ns 1.5 SWITCHING CHARACTERISTICS 10000 4 1.0 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF 0.5 2SK3112 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 0 20 40 60 80 120 100 80 60 40 20 0 100 120 140 160 20 0 40 60 80 100 120 140 160 TC - Case Temperature - C Tch - Channel Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 PW ID(pulse) =1 0 10 s 0 s 1m Po 3 s we 10 ms rD m s iss D ipa C tio n Lim ite d d ite Lim n) o S( ID(DC) 10 1 0.1 TC = 25C Single Pulse 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(ch-A) = 83.3C/W rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A RD 10 1 Rth(ch-C) = 1.25C/W 0.1 0.01 10 Single Pulse 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - sec Data Sheet D13335EJ1V0DS 5 2SK3112 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 25 A EA S= 0m J 10 1 0.01 25 0.1 1 10 L - Inductive Load - mH 6 VDD = 100 V RG = 25 VGS = 20 V 0 V IAS 25 A 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C Data Sheet D13335EJ1V0DS 2SK3112 PACKAGE DRAWINGS (Unit : mm) 4.8 MAX. 3.00.3 10.6 MAX. 3.60.2 10 TYP. 1.30.2 4 1 1 2 3 3 12.7 MIN. 6.0 MAX. 1.30.2 1.30.2 0.750.3 2.54 TYP. 0.50.2 0.750.1 2.54 TYP. 2 1.30.2 0.50.2 2.80.2 2.54 TYP. 2.80.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3)TO-263 (MP-25ZJ) 4.8 MAX. 12.7 MIN. 4 15.5 MAX. 5.9 MIN. 10.0 TYP. 1.00.5 2)TO-262 8.50.2 1)TO-220AB (MP-25) EQUIVALENT CIRCUIT 4.8 MAX. 10 TYP. Drain 1.30.2 2 3 5.70.4 1 8.50.2 1.00.5 4 1.40.2 0.70.2 . YP R 0.5 2.54 TYP. 2.80.2 2.54 TYP. Body Diode Gate T R 0.8 Gate Protection Diode . P TY Source 0.50.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D13335EJ1V0DS 7 2SK3112 * The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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