Silicon Power Transistor
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Features:
• Darlington complementary
•High DC current gain at lc = 10 A : hFE = 4,000
•Collector - emitter sustaining voltage VCEO(sus) = 100 V(Minimum)
•Monolithic construction with built-in base - emitter shunt resistor
Application:
Designed for use general-purpose amplifier and low -frequency switching applications
TO-3
TO-3
Pin 1. Base
2. Emitter
3. Collector (Case)
Dimension Millimetres
Minimum Maximum
A 38.75 39.96
B 19.28 22.23
C 7.96 9.28
D 11.18 12.19
E 25.2 26.67
F 0.92 1.09
G 1.38 1.62
H 29.9 30.4
I 16.64 17.3
J 3.88 4.36
K 10.67 11.18
Dimensions : Millimetres
Darlington
20 Amperes
Complementary Silicon
Power Transistor
Maximum Ratings
Characteristic Symbol 2N6287 Unit
Collector - emitter voltage VCEO 100 V
Emitter - base voltage VCBO 100 V
Collector - emitter voltage VEBO 5 V
Collector current - continuous
- Peak IC20
40 A
Base current IB0.5 A
Total power dissipation at TC = 25°C
Derate above 25°C PD
160
0.915
W
W/°C
Operating and storage junction temperature range TJ, TSTG -65 to +200 °C
Silicon Power Transistor
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Characteristic Symbol Maximum Unit
Thermal resistance junction to case Rθjc 1.09 °C/W
Thermal Characteristics
TC, Temperature (°C)
PD, Power Dissipation (Watts)
Figure-1 Power Derating
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector - emitter sustaining voltage (1)
(IC= 100 mA, IB= 0) VCEO (SUS) 100 - V
Collector - emitter breakdown voltage (1)
(VCE = 50 V, IB= 0) ICEO - 1 mA
Collector cut off current
(VCE = 100 V, VBE (off) = 1.5 V)
(VCe = 100 V, VBE (off) = 1.5 V, TC = 150°C)
ICEX - 0.5
5
mA
Emitter cut off current
(VEB = 5 V, IC= 0) IEBO - 2 mA
ON Characteristics (1)
DC current gain
(IC= 7.5 A, VCE = 3 V)
(IC= 20 A, VCE = 3 V)
hFE 75
100
18,000 -
Collector - emitter saturation voltage
(IC= 10 A, IB= 40 mA)
(IC= 20 A, IB= 200 mA)
VCE (sat) - 2
3
V
Base - emitter saturation voltage
(IC= 20 A, IB= 200 mA) VBE (sat) - 4
Base - emitter on voltage
(IC= 10 A, VCE = 3 V) VBE (on) - 2.8 V
Dynamic Characteristics
Current capacitance
(VCB = 10 V, IE= 0, f = 1 MHz) Cob - 600 pF
Small - signal current gain
( lc= 10 A, VCE = 3 V, f = 1 KHZ ) hfe 300 - -
Electrical Characteristics (TC= 25°C Unless Otherwise Noted)
(1) Pulse Test: Pulse width ≤ 300 µs, Duty Cycle ≤ 2%
VCE, Collector Emitter Voltage (Volts)
Silicon Power Transistor
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Switching Time
t, Time (µs)
Capacitances
VR, Reverse Voltage (Volts)
C, Capacitance (pF)
IC, Collector Current (Amperes)
Active - Region Safe Operating Area (SOA)
ICCollector Current (Amperes)
DC Current Gain
hFE DC Current Gain
IC, Collector Current (Amperes)
Collector Saturation Region
VCE, Collector Emitter Voltagle (Volts)
IB, Base Current (mA)
There are two limitation on the power handling ability
of a transistor:average junction termperature and second
breakdown safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to
greater dissipation than curves indicate
The data of SOA curve is base on TJ(PK) = 200°C;Tcis
variable depending on conditions, second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pK) < 200°C, at high case temperatures, thermal limitation
will reduce the power that can be handled to values
less than the limitations imposed by second breakdown
Silicon Power Transistor
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Description Part Number
Silicon Power Transistor 2N6287
Part Number Table
Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
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all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
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“ON” Voltages
V Voltage (Volts)
IC, Collector Current (Amperes)
