KSP75/76/77 KSP75/76/77 Darlington Transistor * Collector-Emitter Voltage: VCES= KSP75: 40V KSP76: 50V KSP77: 60V * Collector Power Dissipation: PC (max)=625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Value Units -40 -50 -60 V V V Collector-Base Voltage : KSP75 : KSP76 : KSP77 VEBO Emitter-Base Voltage -10 V IC Collector Current -500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55~150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO BVCBO ICBO Parameter Collector-Base Breakdown Voltage : KSP75 : KSP76 : KSP77 Test Condition IC= -100A, IB=0 Collector-Base Breakdown Voltage : KSP75 : KSP76 : KSP77 IC= -100A, IE=0 Max. IEBO Emitter Cut-off Current ICES Collector Cut-off Current : KSP75 : KSP76 : KSP77 V V V -40 -50 -60 V V V VCE= -30V, IE=0 VCE= -40V, IE=0 VCE= -50V, IE=0 -100 -100 -100 nA nA nA nA VCE= -10V, IB=0 -100 nA VCE= -30V, IE=0 VCE= -40V, IE=0 VCE= -50V, IE=0 -500 -500 -500 nA nA nA -1.5 V 2 V DC Current Gain VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -0.1mA VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -100mA (c)2001 Fairchild Semiconductor Corporation Units -40 -50 -60 Collector Cut-off Current : KSP75 : KSP76 : KSP77 hFE Min. 10K 10K Rev. A1, July 2001 KSP75/76/77 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000k hFE, DC CURRENT GAIN VCE = -5V 100k 10k 1k -1 -10 -100 -1000 -10 IC = 1000 IB VBE(sat) -1 V CE(sat) -0.1 -1 IC[mA], COLLECTOR CURRENT -10 -400 -100 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10k 200 IC[A], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT VCE = -5V 100 10 100 S -1k 1mS 1S O TC = 25 C -100 O T a = 25 C 1 -0.0 -10 -0.4 -0.8 -1.2 -1.6 -2.0 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage (c)2001 Fairchild Semiconductor Corporation -2.4 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 4. Safe Operating Area Rev. A1, July 2001 KSP75/76/77 Package Demensions TO-92 +0.25 4.58 0.20 4.58 -0.15 0.10 14.47 0.40 0.46 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.20 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 +0.10 0.38 -0.05 (R2.29) Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H3