©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
KSP75/76/77
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCES
Collector-Base V oltage : KSP75
: KSP76
: KSP77
-40
-50
-60
V
V
V
VEBO Emitter-Base Voltage -10 V
ICCollector Current -500 mA
PCCollector Power Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55~150 °C
Symbol Parameter Test Condition Min. Max. Units
BVCEO Collect or-B ase Break down Voltage
: KSP75
: KSP76
: KSP77
IC= -100µA, IB=0 -40
-50
-60
V
V
V
BVCBO Collect or-B ase Break down Voltage
: KSP75
: KSP76
: KSP77
IC= -100µA, IE=0 -40
-50
-60
V
V
V
ICBO Collector Cut-off Current : KSP75
: KSP76
: KSP77
VCE= -30V, IE=0
VCE= -40V, IE=0
VCE= -50V, IE=0
-100
-100
-100
nA
nA
nA
nA
IEBO Emitter Cut-off Current VCE= -10V, IB=0 -100 nA
ICES Collector Cut-off Current : KSP75
: KSP76
: KSP77
VCE= -30V, IE=0
VCE= -40V, IE=0
VCE= -50V, IE=0
-500
-500
-500
nA
nA
nA
hFE DC Current Gain VCE= -5V, IC= -10mA
VCE= -5V, IC= -100mA 10K
10K
VCE (sat) Collector-Emitter Saturat ion Voltage IC= -100mA, IB= -0.1mA -1.5 V
VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -100mA 2 V
KSP75/76/77
Darlington Transistor
• Collector-Emitter Voltage: VCES= KS P75: 40V
KSP76: 50V
KSP77: 60V
• Collector Power Dissipation: PC (max)=625m W
1. Emitter 2. Base 3. Collector
TO-92
1
©2001 Fairchild Semiconductor Corporation
KSP75/76/77
Rev. A1, July 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
-1 -10 -100 -1000
1k
10k
100k
1000k
VCE = -5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100
-0.1
-1
-10
-400
IC = 1000 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
1
10
100
200
VCE = -5V
IC [mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
-10
-100
-1k
-10k
Ta = 25OC
TC = 25OC
1S
1mS
100µS
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
KSP75/76/77
Dimensions in Millimeters
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CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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