SIEMENS BCR 185W PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (Ry = 10kQ, Re = 47kQ) S005561 Type Marking ;Ordering Code | Pin Configuration Package BCR 185W WNs Q62702-C2280 |1=B 2 =E 3=C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VcEo 50 Vv Collector-base voltage Voso 50 Emitter-base voltage Veso 6 Input on Voltage Vion) 20 DC collector current Io 100 mA Total power dissipation, Ts = 124C Prot 250 mW Junction temperature T 150 C Storage temperature Tetg ~ 65 ... + 150 Thermal Resistance Junction ambient 3 Fitnga $240 KW Junction - soldering point Rinus $105 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5em? Cu Semiconductor Group 719 11.96SIEMENS . BCR 185W Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symboi Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage ViaryCEO Vv Io = 100 A, Ip = 0 50 - - Collector-base breakdown voltage Visricso Io = 10 pA, Ip = 0 50 - - Collector cutoff current lcso nA Vop = 40 V, - =0 - - 100 Emitter cutoff current lEBO HA Vep =6V, ic =0 - - 167 DC current gain Are - lo=5mMA, Vog=5V 70 - - Collector-emitter saturation voltage 1) VcEsat Vv Io = 10 mA, Ip =0.5 MA - - 0.3 Input off voltage Voth lo = 100 UA, Vog=5V 0.5 - 1 Input on Voltage Vicon) Io=2mA, Vog = 0.3 V 0.5 - 1.4 Input resistor R, 7 10 13 kQ Resistor ratio Ry /Ro 0.19 0.21 0.24 - AC Characteristics Transition frequency fr MHz Io = 10 MA, Veg =5 V, f= 1 MHz - 200 - Collector-base capacitance Cob pF Veg = 10-V, f= 1 MHz - 2 - 1) Pulse test: t < 300us; D < 2% Semiconductor Group 720 11.96SIEMENS BCR 185W DC Current Gain he = f (Ic) Collector-Emitter Saturation Voitage Vce = 5V (common emitter configuration) Voesat = Alc), Are = 20 103 Nee I 102 101 10 10 10 10 mA 0.0 0.2 0.4 0.6 v 1.0 m by > Mest input on Voltage Vion) = (ic) Input off voltage Viofty = f(/c) Voce = 0.3V (common emitter configuration) Voge = 5V (common emitter configuration) Vion Vion Semiconductor Group 721 11.96SIEMENS BCR 165 Total power dissipation P,., = f(T,*;Ts) * Package mounted on epoxy 300 mw . \ 100] \ | ; \ Qo 0 20 40 60 80 100 120 C 150 te TyTs Permissible Pulse Load Ainys = ftp) Permissible Pulse Load Protmax / Protoc = Afp) 103 103 il Aa Ht L Pamela UT vA a ow CHE A Cc TT en TE Ce UR CUT CUT C TiN : q H ix ai me in crs au Ne aint CTs Wt BU Pe ai: Se | WM TT i i i 0 HE Hea i oe YE aN 10 10" s 10 10 10" 107% 107% 10 s 10 Semiconductor Group 722 11.96