IPP114N12N3 G OptiMOSTM3 Power-Transistor Features Product Summary * N-channel, normal level VDS 120 V * Excellent gate charge x R DS(on) product (FOM) RDS(on)max 11.4 m 75 ID * Very low on-resistance R DS(on) A * 175 C operating temperature * Pb-free lead plating; RoHS compliant; halogen free * Qualified according to JEDEC1) for target application * Ideal for high-frequency switching and synchronous rectification Type IPP114N12N3 G Package PG-TO220-3 Marking 114N12N 25 C, C, unless otherwise specified Maximum ratings, at T j=25 Parameter Symbol Conditions Continuous drain current ID Value T C=25 C 75 T C=100 C 53 Unit A Pulsed drain current2) I D,pulse T C=25 C 300 Avalanche energy, single pulse E AS I D=75 A, R GS=25 120 mJ Gate source voltage3) V GS 20 V Power dissipation P tot 136 W Operating and storage temperature T j, T stg -55 ... 175 C T C=25 C IEC climatic category; DIN IEC 68-1 1) 55/175/56 J-STD20 and JESD22 2) see figure 3 3) Tjmax=150C and duty cycle D=0.01 for Vgs<-5V Rev. 2.4 page 1 2011-11-25 IPP114N12N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.1 minimal footprint - - 62 6 cm2 cooling area4) - - 40 120 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=83 A 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 C - 10 100 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 Drain-source on-state resistance R DS(on) V GS=10 V, I D=75 A - 9.8 11.4 Gate resistance RG - 1.5 - Transconductance g fs 40 80 - S |V DS|>2|I D|R DS(on)max, I D=75 A nA 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.4 page 2 2011-11-25 IPP114N12N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 3240 4310 - 408 543 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 22 - Turn-on delay time t d(on) - 19 - Rise time tr - 36 - Turn-off delay time t d(off) - 30 - Fall time tf - 7 - Gate to source charge Q gs - 18 - Gate to drain charge Q gd - 12 - Switching charge Q sw - 20 - g total Gate charge Qg - 49 65 Gate plateau voltage V plateau - 5.6 - Output charge Q oss - 56 75 nC - - 75 A - - 300 - 1 1.2 - 116 ns - 232 nC V GS=0 V, V DS=60 V, f =1 MHz V DD=60 V, V GS=10 V, I D=37 A, R G=1.6 ns Gate Charge Characteristics5) V DD=60 V, I D=75 A, V GS=0 to 10 V V DD=60 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) T C=25 C V GS=0 V, I F=75 A, T j=25 C V R=60 V, I F=I S, di F/dt =100 A/s V See figure 16 for gate charge parameter definition Rev. 2.4 page 3 2011-11-25 IPP114N12N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS10 V 80 140 70 120 60 100 ID [A] Ptot [W] 50 80 40 60 30 40 20 20 10 0 0 0 50 100 150 0 200 50 TC [C] 100 150 200 TC [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 1 s 10 s 102 100 s 100 101 0.5 ZthJC [K/W] ID [A] 1 ms DC 10 ms 0.2 0.1 10-1 0.05 0.02 100 0.01 single pulse 10-1 10-2 10-1 100 101 102 103 VDS [V] Rev. 2.4 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2011-11-25 IPP114N12N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 30 250 10 V 8V 4.5 V 7V 5V 25 200 150 RDS(on) [m] 20 ID [A] 6.5 V 100 6V 5.5 V 15 6V 10 10 V 5.5 V 50 5 5V 4.5 V 0 0 0 1 2 3 4 0 5 20 VDS [V] 40 60 80 60 80 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C parameter: T j 100 200 80 150 60 ID [A] gfs [S] 250 100 40 175 C 50 20 25 C 0 0 0 2 4 6 8 VGS [V] Rev. 2.4 0 20 40 ID [A] page 5 2011-11-25 IPP114N12N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=75 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 30 4 3.5 25 830 A 3 83 A 2.5 15 VGS(th) [V] RDS(on) [m] 20 98 % typ 2 1.5 10 1 5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [C] 60 100 140 180 Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 25 C 104 175 C 102 Ciss 103 IF [A] C [pF] 175 C, 98% Coss 25 C, 98% 101 Crss 102 101 100 0 20 40 60 80 VDS [V] Rev. 2.4 0 0.5 1 1.5 2 VSD [V] page 6 2011-11-25 IPP114N12N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 V GS=f(Q gate); I D=75 A pulsed parameter: T j(start) parameter: V DD 102 10 8 96 V 25 C 60 V 6 24 V VGS [V] IAS [A] 100 C 101 150 C 4 2 100 0 100 101 102 0 103 10 tAV [s] 20 30 40 50 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 135 V GS Qg 130 VBR(DSS) [V] 125 120 V g s(th) 115 110 Q g (th) Q sw Q gs 105 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [C] Rev. 2.4 page 7 2011-11-25 IPP114N12N3 G PG-TO220-3: Outline Rev. 2.4 page 8 2011-11-25 IPP114N12N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 9 2011-11-25