GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFOR M ANC E CH ARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UTV040
4 Watts, 25 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV 040 is a COMMON EMITTER transistor capable of providing 4
Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55FT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 25 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 45 Volts
BVceo Collector to Emitter Voltage 25 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 2.5 Amps
Ma ximum Temperatures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
IMD1
VSWR1
Power Out - Pk Sync
Power Input
Power Gain
Intermodulation Distortion
Load Mismatch Tolerance
F = 470 - 860 MHz
Vcc = 25 Volts
Ic = 850 mA
Pref = 4.0 Watts
F = 860 MHz
4.0
9.0
-60
0.65
30:1
Watts
Watts
dB
dB
LVceo
BVces
BVebo
hFE
Cob
θjc
Collector to Emitter Breakdo wn
Collector to Base Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 20 mA
Ic = 20 mA
Ie = 1 mA
Vce = 5 V, 500 mA
Vcb = 25 V, F = 1 MHz
Tc = 25 C
o
25
45
4.0
10
10 17 100
7.0
Volts
Volts
Volts
pF
C/W
o
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
Initial Issue June, 1994
UTV040
