TECHNICAL DATA
SILICON CONTROLLED RECTIFIER
Qualified per MIL-PRF-19500/276
Devices Qualified
Level
2N2323
2N2323S
2N2323A
2N2323AS
2N2324
2N2324S
2N2324A
2N2324AS
2N2326
2N2326S
2N2326A
2N2326AS
2N2328
2N2328S
2N2328A
2N2328AS
2N2329
2N2329S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Sym
2N2323,S/
2N2323A,S
2N2324,S/
2N2324A,S
2N2326,S/
2N2326A,S
2N2328,S/
2N2328A,S
2N2329,S
Unit
Reverse Voltage VRM 50 100 200 300 400 Vdc
Working Peak Reverse Voltage VRM 75 150 300 400 500 Vpk
Forward Blocking Voltage VFBXM
50(3/4) 100(3/4) 200(3/4) 300(3/4) 400(3) Vpk
Average Forward Current (1) IO 0.22 Adc
Forward Current Surge Peak(2) IFSM 15 Adc
Cathode-Gate Current VKGM 6 Vpk
Operating Temperature Top -65 to +125 0C
Storage Junction Temp Tstg -65 to +150 0C
1) This average forward current is for an ambient temperature of 800C and 180 electrical degrees of
conduction.
2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during the
first 5 µs after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured from
the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3) Gate connected to cathode through 1,000 ohm resistor.
4) Gate connected to cathode through 2,000 ohm resistor.
TO-5
*See appendix A
for package outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
SUBGROUP 2 TESTING
Reverse Blocking Current
R2 = 1 kµ 2N2323 thru 2N2329
2N2323S thru 2N2329S
R2 = 2 kµ 2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
VR = 50 Vdc 2N2323, S, A, AS
VR = 100 Vdc 2N2324, S, A, AS
VR = 200 Vdc 2N2326, S, A, AS
VR = 300 Vdc 2N2328, S, A, AS
VR = 400 Vdc 2N2329, S,
IRBX1
10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Forward Blocking Current
R2 = 1 kΩ 2N2323 thru 2N2329
2N2323S thru 2N2329S
R2 = 2 kΩ 2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
VR = 50 Vdc 2N2323, S, A, AS
VR = 100 Vdc 2N2324, S, A, AS
VR = 200 Vdc 2N2326, S, A, AS
VR = 300 Vdc 2N2328, S, A, AS
VR = 400 Vdc 2N2329, S
IFBX1
10 µAdc
Reverse Gate Current
VKG = 6 Vdc IKG 200 µAdc
Gate Trigger Voltage and Current
V2 = VFBX = 6 Vdc; RL = 100 Ω
Re = 1 kΩ 2N2323 thru 2N2329 and
2N2323S thru 2N2329S
Re = 2 kΩ 2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
VGT1
IGT1
VGT1
IGT1
0.35
0.35
0.80
200
0.60
20
Vdc
µAdc
Vdc
µAdc
SUBGROUP 4 TESTING
Exponential Rate of Voltage Rise TA = 1250C
50 Ω ≤ RL ≤ 400 Ω, C = 0.1 to 1.0 µF, repetition rate = 60 pps,
test duration = 15 seconds
dv/dt = 1.8 v/µs, R3 = 1 kΩ 2N2323 thru 2N2329 and
2N2323S thru 2N2329S
dv/dt = 0.7 v/µs, R3 = 2 kΩ 2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
VAA = 50 Vdc 2N2323, S, A, AS
VAA = 100 Vdc 2N2324, S, A, AS
VAA = 200 Vdc 2N2326, S, A, AS
VAA = 300 Vdc 2N2328, S, A, AS
VAA = 400 Vdc 2N2329, S
VFBX
47
95
190
285
380
Vdc
Forward “on” Voltage
iFM = 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max
VFM
2.2 V(pk)
Holding Current
VAA = 24 Vdc max, IF1 = 100 mAdc, IF2 = 10 mAdc
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25 µs min., R2 = 330 Ω
R3 = 1 kΩ 2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R3 = 2 kΩ 2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
IHOX 2.0 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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