SMAJ5.0 THRU SMAJ170CA
SURFACE MOUNT TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Stand-off Voltage - 5.0 to 170 Volts Peak Pulse Power - 300 Watts
FEATURES
♦ Optimized for LAN protection applications
♦ Ideal for ESD protection of data lines in accordance
with IEC 1000-4-2 (IEC801-2)
♦ Ideal for EFT protection of data lines in accordance with
IEC1000-4-4 (IEC801-4)
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ Glass passivated junction
♦ Excellent clamping capability
♦ Low incremental surge resistance
♦ Fast response time: typically less than 1.0ps from 0 Volts
to V(BR) min.
♦ 300W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
♦ High temperature soldering guaranteed:
250°C/10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the color band denotes
the cathode, which is postitive with respect to the anode
under normal TVS operation
Mounting Position: Any
Weight: 0.002 ounces, 0.064 gram
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use suffix C or CA for types SMAJ5.0 thru SMAJ170 (e.g. SMAJ5.0C, SMAJ170CA)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS VALUE UNITS
Peak pulse power dissipation with a 10/1000µs waveform (NOTE 1, 2, FIG.1) PPM Minimum 300 Watts
Peak pulse current with a 10/1000µs waveform (NOTE 1) IPPM SEE TABLE 1 Amps
Peak forward surge current 8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) (NOTES 2, 3) - unidirectional only IFSM 40.0 Amps
Maximum instantaneous forward voltage at 25A (NOTE 3) VF3.5 Volts
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
NOTES:
(1) Non-repetitive current pulse, per Fig.3 and derated above TA=25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Measured on 8.3ms single half sine-wave. For uni-directional devices only.
1/20/99
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52) 0.008 (0.203) MAX.
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
DO-214AC
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) TABLE 1
Device
Marking Code
Device UNI BI
SMAJ5.0 AD WD 6.4 7.82 10 5.0 800 31.3 9.6
SMAJ5.0A AE WE 6.4 7.07 10 5.0 800 32.6 9.2
SMAJ6.0 AF WF 6.67 8.15 10 6.0 800 26.3 11.4
SMAJ6.0A AG WG 6.67 7.37 10 6.0 800 29.1 10.3
SMAJ6.5 AH WH 7.22 8.82 10 6.5 500 24.4 12.3
SMAJ6.5A AK WK 7.22 7.98 10 6.5 500 26.8 11.2
SMAJ7.0 AL WL 7.78 9.51 10 7.0 200 22.6 13.3
SMAJ7.0A AM WM 7.78 8.6 10 7.0 200 25.0 12.0
SMAJ7.5 AN WN 8.33 10.3 1.0 7.5 100 21.0 14.3
SMAJ7.5A AP WP 8.33 9.21 1.0 7.5 100 23.3 12.9
SMAJ8.0 AQ WQ 8.89 10.9 1.0 8.0 50.0 20.0 15.0
SMAJ8.0A AR WR 8.89 9.83 1.0 8.0 50.0 22.1 13.6
SMAJ8.5 AS WS 9.44 11.5 1.0 8.5 10.0 18.9 15.9
SMAJ8.5A AT WT 9.44 10.4 1.0 8.5 10.0 20.8 14.4
SMAJ9.0 AU WU 10.0 12.2 1.0 9.0 5.0 17.8 16.9
SMA J9.0A AV WV 10.0 11.1 1.0 9.0 5.0 19.5 15.4
SMAJ10 AW WW 11.1 13.6 1.0 10.0 5.0 16.0 18.8
SMAJ10A AX WX 11.1 12.3 1.0 10.0 5.0 17.6 17.0
SMAJ11 AY WY 12.2 14.9 1.0 11.0 5.0 14.9 20.1
SMAJ11A AZ WZ 12.2 13.5 1.0 11.0 5.0 16.5 18.2
SMAJ12 BD XD 13.3 16.3 1.0 12.0 5.0 13.6 22.0
SMAJ12A BE XE 13.3 14.7 1.0 12.0 5.0 15.1 19.9
SMAJ13 BF XF 14.4 17.6 1.0 13.0 5.0 12.6 23.8
SMAJ13A BG XG 14.4 15.9 1.0 13.0 5.0 14.0 21.5
SMAJ14 BH XH 15.6 19.1 1.0 14.0 5.0 11.6 25.8
SMAJ14A BK XK 15.6 17.2 1.0 14.0 5.0 12.9 23.2
SMAJ15 BL XL 16.7 20.4 1.0 15.0 5.0 11.2 26.9
SMAJ15A BM XM 16.7 18.5 1.0 15.0 5.0 12.3 24.4
SMAJ16 BN XN 17.8 21.8 1.0 16.0 5.0 10.4 28.8
SMAJ16A BP XP 17.8 19.7 1.0 16.0 5.0 11.5 26.0
SMAJ17 BQ XQ 18.9 23.1 1.0 17.0 5.0 9.8 30.5
SMAJ17A BR XR 18.9 20.9 1.0 17.0 5.0 10.9 27.6
SMAJ18 BS XS 20.0 24.4 1.0 18.0 5.0 9.3 32.2
SMAJ18A BT XT 20.0 22.1 1.0 18.0 5.0 10.3 29.2
SMAJ20 BU XU 22.2 27.1 1.0 20.0 5.0 8.4 35.8
SMAJ20A BV XV 22.2 24.5 1.0 20.0 5.0 9.3 32.4
SMAJ22 BW XW 24.4 29.8 1.0 22.0 5.0 7.6 39.4
SMAJ22A BX XX 24.4 26.9 1.0 22.0 5.0 8.5 35.5
SMAJ24 BY XY 26.7 32.6 1.0 24.0 5.0 7.0 43.0
SMAJ24A BZ XZ 26.7 29.5 1.0 24.0 5.0 7.7 38.9
SMAJ26 CD YD 28.9 35.3 1.0 26.0 5.0 6.4 46.6
SMAJ26A CE YE 28.9 31.9 1.0 26.0 5.0 7.1 42.1
SMAJ28 CF YF 31.1 38.0 1.0 28.0 5.0 6.0 50.0
SMAJ28A CG YG 31.1 34.4 1.0 28.0 5.0 6.6 45.4
SMAJ30 CH YH 33.3 40.7 1.0 30.0 5.0 5.6 53.5
SMAJ30A CK YK 33.3 36.8 1.0 30.0 5.0 6.2 48.4
SMAJ33 CL YL 36.7 44.9 1.0 33.0 5.0 5.1 59.0
SMAJ33A CM YM 36.7 40.6 1.0 33.0 5.0 5.6 53.3
SMAJ36 CN YN 40.0 48.9 1.0 36.0 5.0 4.7 64.3
SMAJ36A CP YP 40.0 44.2 1.0 36.0 5.0 5.2 58.1
SMAJ40 CQ YQ 44.4 54.3 1.0 40.0 5.0 4.2 71.4
SMAJ40A CR YR 44.4 49.1 1.0 40.0 5.0 4.7 64.5
SMAJ43 CS YS 47.8 58.4 1.0 43.0 5.0 3.9 76.7
SMAJ43A CT YT 47.8 52.8 1.0 43.0 5.0 4.3 69.4
SMAJ45 CU YU 50.0 61.1 1.0 45.0 5.0 80.3 3.7
SMAJ45A CV YV 50.0 55.3 1.0 45 5.0 72.7 4.1
SMAJ48 CW YW 53.3 65.1 1.0 48 5.0 85.5 3.5
SMAJ48A CX YX 53.3 58.9 1.0 48 5.0 77.4 3.9
SMAJ51 CY YY 56.7 69.3 1.0 51 5.0 91.1 3.3
SMAJ51A CZ YZ 56.7 62.7 1.0 51 5.0 82.4 3.6
Test
Current
IT
(mA)
Working Peak
Reverse Voltage
VWM (Volts)
Breakdown Voltage
V(BR) (Volts) at IT
(NOTE 1)
Min. Max.
Maximum Clamping
Voltage at IPPM
Vc (Volts)
Maximum
Peak Pulse
Surge Current IPPM
(NOTE 2) (Amps)
Maximum
Reverse
Leakage
a VWM
(NOTE 3) ID (µA)
RECOMMENDED PAD LAYOUT
The pad dimensions should be 0.010” (2.5mm) longer than the contact size in the lead
axis. This allows a solder fillet to form, see figure below. Contact factory for soldering
methods.
MODIFIED J-BEND
0.060 MIN
(1.52 MIN)
0.050 MIN
(1.27 MIN) 0.220 REF
(5.58)
0.094 MAX
(2.38 MAX)
Dimensions in inches and (millimeters
)
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) TABLE 1 (Cont’d)
Device
Marking Code
Device UNI BI
SMAJ54 RD ZD 60.0 73.3 1.0 54 5.0 96.3 3.1
SMAJ54A RE ZE 60.0 66.3 1.0 54 5.0 87.1 3.4
SMAJ58 RF ZF 64.4 78.7 1.0 58 5.0 103 2.9
SMAJ58A RG ZG 64.4 71.2 1.0 58 5.0 93.6 3.2
SMAJ60 RH ZH 66.7 81.5 1.0 60 5.0 107 2.8
SMAJ60A RK ZK 66.7 73.7 1.0 60 5.0 96.8 3.1
SMAJ64 RL ZL 71.1 86.4 1.0 64 5.0 114 2.6
SMAJ64A RM ZM 71.1 78.6 1.0 64 5.0 103 2.9
SMAJ70 RN ZN 77.8 95.1 1.0 70 5.0 125 2.4
SMAJ70A RP ZP 77.8 86 1.0 70 5.0 113 2.7
SMAJ75 RQ ZQ 83.3 102 1.0 75 5.0 134 2.2
SMAJ75A RR ZR 83.3 92.1 1.0 75 5.0 121 2.5
SMAJ78 RS ZS 86.7 106 1.0 78 5.0 139 2.2
SMAJ78A RT ZT 86.7 95.8 1.0 78 5.0 126 2.4
SMAJ85 RU ZU 94.4 115 1.0 85 5.0 151 2
SMAJ85A RV ZV 94.4 104 1.0 85 5.0 137 2.2
SMAJ90 RW ZW 100 122 1.0 90 5.0 160 1.9
SMAJ90A RX ZX 100 111 1.0 90 5.0 146 2.1
SMAJ100 RY ZY 111 136 1.0 100 5.0 179 1.7
SMAJ100A RZ ZZ 111 123 1.0 100 5.0 162 1.9
SMAJ110 SD VD 122 149 1.0 110 5.0 196 1.5
SMAJ110A SE VE 122 135 1.0 110 5.0 177 1.7
SMAJ120 SF VF 133 163 1.0 120 5.0 214 1.4
SMAJ120A SG VG 133 147 1.0 120 5.0 193 1.6
SMAJ130 SH VH 144 176 1.0 130 5.0 231 1.3
SMAJ130A SK VK 144 159 1.0 130 5.0 209 1.4
SMAJ150 SL VL 167 204 1.0 150 5.0 268 1.1
SMAJ150A SM VM 167 185 1.0 150 5.0 243 1.2
SMAJ160 SN VN 178 218 1.0 160 5.0 287 1.0
SMAJ160A SP VP 178 197 1.0 160 5.0 259 1.2
SMAJ170 SQ VQ 189 231 1 170 5.0 304 0.99
SMAJ170A SR VR 189 209 1.0 170 5.0 275 1.09
This device is designed specifically for transient voltage suppression from
threats generated by ESD for board level load switching components.
The wide leads assure a large surface contact for good heat dissipation,
and a low resistance path for surge current flow to ground.
This series is designed to optimize board space and for use with surface
mount technology automated assembly equipment.
They can be easily mounted on printed circuit boards and ceramic
substrates to protect sensitive components from transient voltage
damage.
APPLICATION NOTES
Test
Current
IT
(mA)
Working Peak
Reverse Voltage
VWM (Volts)
Breakdown Voltage
V(BR) (Volts) at IT
(NOTE 1)
Min. Max.
Maximum Clamping
Voltage at IPPM
Vc (Volts)
Maximum
Peak Pulse
Surge Current IPPM
(NOTE 2) (Amps)
Maximum
Reverse
Leakage
a VWM
(NOTE 3) ID (µA)
NOTES:
(1) V(BR) measured after ITapplied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) For the bi-directional SMAJ5.0CA, the maximum V(BR) is 7.25V.
(5) All terms and symbols are consistent with ANSI/IEEE C62.35
01.0 2.0 3.0 4.0
0
100
150
50
110 100
0
10
20
30
40
50
0.1ms1.0ms10ms100ms1.0ms 10ms
0.1
1.0
10
100
050 100 150
0
25
50
75
100
25 75 125 175
110 100 200
10
100
1,000
10,000
MAXIMUM RATINGS AND CHARACTERISTIC CURVES SMAJ5.0 THRU SMAJ170CA
105
84
63
42
21
0V
-21
-42
-63
-84
-105 010 20 30 40 50 60 70
FIG. 5- Typical Response to 8KV Positive Going ESD Pulse
Per IEC1000 - 4-2 (IEC801-2)
t, TIME, nsec
LET THROUGH VOLTAGE, VOLTS
FIG. 1 - PEAK PULSE POWER RATING CURVE
PPPM, PEAK PULSE POWER, kW
td, PULSE WIDTH, sec.
TA, AMBIENT TEMPERATURE, °C
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
FIG. 3 - PULSE WAVEFORM
t, TIME, ms V(BR), BREAKDOWN VOLTAGE, VOLTS
NUMBER OF CYCLES AT 60 HZ
IPPM, PEAK PULSE CURRENT, %
PEAK PULSE POWER (Ppp) or CURRENT (IPPM)
DERATING IN PERCENTAGE, %
CJ, JUNCTION CAPACITANCE, pF
IFSM, PEAK FORWARD SURGE CURRENT,
AMPERES
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
TA=25°C
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS
to 50% of IPPM
tr=10µsec.
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
Measured at
Stand-off
Voltage, VWM
UNI-DIRECTIONAL
BI-DIRECTIONAL
Device Used:
SMAJ15C
TJ=TJmax.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
td
PEAK VALUE
IPPM
HALF VALUE - IPPM
2
10/1000µsec. WAVEFORM
as DEFINED by R.E.A.
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
FIG. 2 - PULSE DERATING CURVE
0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS
0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS
