RHRD660S9A_F085 Data Sheet May 2013 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics (trr < 30ns). It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC This device is intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. * Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated * Planar Construction * Qualified to AEC Q101 * RoHS Compliant Applications * Switching Power Supplies Formerly developmental type TA49057. * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RHRD660S9A_F085 PACKAGE BRAND TO-252 RHR660 Packaging Symbol JEDEC STYLE TO-252 K CATHODE (FLANGE) CATHODE A Absolute Maximum Ratings ANODE TC = 25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 152oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG (c)2011 Fairchild Semiconductor Corporation RHRD660S9A_F085 600 600 600 6 UNITS V V V A 12 A 60 A 50 10 W mJ oC -55 to 175 300 260 oC oC RHRD660S9A_F085 Rev.C2 RHRD660S9A_F085 Electrical Specifications SYMBOL TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP MAX UNITS IF = 6A - - 2.1 V IF = 6A, TC = 150oC - - 1.7 V VR = 600V - - 100 A VR = 600V, TC = 150oC - - 500 A IF = 1A, dIF/dt = 200A/s - - 30 ns IF = 6A, dIF/dt = 200A/s - - 35 ns ta IF = 6A, dIF/dt = 200A/s - 16 - ns tb IF = 6A, dIF/dt = 200A/s - 8.5 - ns QRR IF = 6A, dIF/dt = 200A/s - 45 - nC VR = 10V, IF = 0A - 20 - pF - - 3 oC/W VF IR trr CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction capacitance. RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 30 1000 IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 175oC 10 175oC 100oC 25oC 1 0.5 0 0.5 1 1.5 2 2.5 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE (c)2011 Fairchild Semiconductor Corporation 3 100 100oC 10 1 0.1 25oC 0.01 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE RHRD660S9A_F085 Rev. C2 RHRD66 RHRD660S9A_F085 Typical Performance Curves (Continued) 30 50 TC = 25oC, dIF/dt = 200A/s TC = 100oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 25 trr 20 15 ta 10 tb 5 0 0.5 1 40 trr 30 ta 20 tb 10 0 0.5 6 1 IF , FORWARD CURRENT (A) IF , FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) 75 t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 200A/s 60 trr 45 30 ta tb 15 0 0.5 1 6 6 6 5 DC 4 SQ. WAVE 3 2 1 0 140 145 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 50 40 30 20 10 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE (c)2011 Fairchild Semiconductor Corporation RHRD660S9A_F085 Rev. C2 RHRD660S9A_F085 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 20mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT (c)2011 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RHRD660S9A_F085 Rev.C2 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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