CMPD5001 CMPD5001S HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE Ccentrai . Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load applications requiring extremely high current SOT-23 CASE The following configurations are available: CMPD5001 CMPD5001S SINGLE DUAL, IN SERIES MAXIMUM RATINGS (T,=25C) Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Forward Surge Current, tp=1 us Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance capability. MARKING CODE: DA2 MARKING CODE: D439 ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) SYMBOL TEST CONDITIONS ByrR IR=1.0mMA IR Vp=90V Ip VR=90V, Ta=150C VE I-F=10mA VE lF=50mA Ve lF=100mA VE IF=200mA SYMBOL UNITS VR 120 Vv Ir 400 mA IFRM 800 mA IRRM 600 mA lIFSmM 6000 mA lesu 1500 mA Pp 350 mw T. JTstg -65 to +150 oC OJA 357 OCW MIN MAX UNITS 420 175 Vv 100 nA 100 pA 0.75 Vv 0.84 Vv 0.90 Vv 1.00 Vv 178SYMBOL TEST CONDITIONS MIN MAX UNITS Ve {p=400mA 1.25 Vv Cr VR=0, f=1 MHz 35 pF ter Ic=I_=30mA, RECOV. TO 1.0mA, Ry, =1002 60 ns tr IF=I_=10mA, RECOV. TO 1.0mA, RL =1002 50 ns All dimensions in inches (mm). -110(2.80) -118(3.00) .003(0.08) .083(2.10) -006(0.15) -041(1.05) NOMINAL eet : NOMINAL ' T -106(2.70) ' .047(1.19} MAX | MUM .063(1.60) rH i .005(0.19) |] 3 MAXIMUM .014(0.35) -037(0.94) .020(0.50) -050(1.28) Seow SBS a7N A SHEET Fle Al a.ce CMPD5001 CMPD5001S R2 179