PAGE . 1October 29,2010-REV.02
2N7002K
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PARAMETER Symbol Limit Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS +20 V
Continuous Drain Current ID300 mA
Pulsed Drain Current 1) IDM 2000 mA
Maximum Power Dissipation TA=25OC
TA=75OCPD
350
210 mW
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150 OC
Junction-to Ambient Thermal Resistance(PCB mounted)2RθJA 357 OC/W
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight: 0.0003 ounces, 0.0084 grams
• Marking : K72
SOT-23
Unit inch(mm):
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)MAX.
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.006(0.15)MIN.
0.103(2.60)
0.086(2.20)
0.008(0.20)
0.003(0.08)