SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 4 - DECEMBER 1996
COMPLEMENTARY TYPES - FMMTA12 NONE
FMMTA13 FMMTA63
FMMTA14 FMMTA64
PARTMARKING DETAILS FMMTA12 3W
FMMTA13 1M
FMMTA14 1N
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMTA12 FMMTA13/14 UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 40 V
Collector-Emitter Voltage VCES 20 40 V
Emitter-Base Voltage VEBO 10 V
Continuous Collector Current IC300 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter FMMTA12
Breakdown Voltage FMMTA13/14
V(BR)CES 20
40
V
V
IC=100µA, IB
=0*
IC=100µA, IB
=0*
Collector Cut-Off FMMTA12
Current
ICES 100 nA VCB=15V, VBE
=0
Collector Cut-Off FMMTA12
Current FMMTA13/14
ICBO 100
100
nA
nA
VCB
=15V, IE=0
VCB
=30V, IE=0
Emitter Cut-Off Current IEBO 100 nA VEB=10V, IC=0
Static Forward FMMTA12
Current Transfer FMMTA13
Ratio FMMTA13
FMMTA14
FMMTA14
hFE 20K
5K
10K
10K
20K
IC=10mA, VCE =5V*
IC=10mA, VCE =5V*
IC=100mA, VCE
=5V*
IC=10mA, VCE =5V*
IC=100mA, VCE
=5V*
Collector-Emitter FMMTA12
Saturation Voltage FMMTA13/14
VCE(sat) 1.0
0.9
V
V
IC=10mA, IB
=0.01mA
IC=100mA, IB
=0.1mA
Base-Emitter FMMTA12
On Voltage FMMTA13/14
VBE(on) 1.4
2.0
V
V
IC=10mA, VCE=5V*
IC=100mA,VCE=5V*
*Measured under pulsed conditions. Pulse width =300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
For typical graphs see FMMT38A datasheet
FMMTA12
FMMTA13
FMMTA14
C
B
E
FMMTA12 Not Recommended for New
Design Please Use FMMTA14
