FINAL Advanced Micro Devices Am27C010 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time Latch-up protected to 100 mA from -1 V to VCC + 1 V -- 55 ns High noise immunity Low power consumption -- 20 A typical CMOS standby current Versatile features for simple interfacing -- Both CMOS and TTL input/output compatibility JEDEC-approved pinout Single +5 V power supply 10% power supply tolerance available 100% Flashrite programming -- Two line control functions Compact 32-pin DIP, PDIP, TSOP, PLCC packages -- Typical programming time of 16 seconds GENERAL DESCRIPTION The Am27C010 is a 1 Megabit ultraviolet erasable programmable read-only memory. It is organized as 128K words by 8 bits per word, operates from a single +5 V supply, has a static standby mode, and features fast single address location programming. Products are available in windowed ceramic DIP packages as well as plastic one time programmable (OTP) PDIP, TSOP, and PLCC packages. Typically, any byte can be accessed in less than 55 ns, allowing operation with high-performance microprocessors without any WAIT states. The Am27C010 offers separate Output Enable (OE) and Chip Enable (CE) controls, thus eliminating bus contention in a multiple bus microprocessor system. AMD's CMOS process technology provides high speed, low power, and high noise immunity. Typical power consumption is only 100 mW in active mode, and 100 W in standby mode. All signals are TTL levels, including programming signals. Bit locations may be programmed singly, in blocks, or at random. The Am27C010 supports AMD's Flashrite programming algorithm (100 s pulses) resulting in a typical programming time of 16 seconds. BLOCK DIAGRAM VCC Data Outputs DQ0-DQ7 VSS VPP OE CE PGM A0-A16 Address Inputs Output Enable Chip Enable and Prog Logic Output Buffers Y Decoder Y Gating X Decoder 1,048,576 Bit Cell Matrix 10205F-1 2-56 Publication# 10205 Rev. F Issue Date: May 1995 Amendment /0 AMD PRODUCT SELECTOR GUIDE Am27C010 Family Part No. Ordering Part No: VCC 5% -55 -70 -90 -120 -150 -200 70 70 35 90 90 40 120 120 50 150 150 65 200 200 75 CONNECTION DIAGRAMS Top View DIP VCC A16 2 31 PGM (P) A15 3 30 NC A12 4 29 A14 A7 5 28 A13 A6 6 27 A8 A5 7 26 A4 8 NC 32 PGM (P) 1 A12 A15 VPP 250 250 75 PLCC VPP VCC 55 55 35 A16 VCC 10% Max Access Time (ns) CE (E) Access (ns) OE (G) Access (ns) -255 4 3 2 1 32 31 30 A7 5 29 A14 A6 6 28 A13 A5 7 27 A8 A9 A4 8 26 A9 25 A11 A3 9 25 A11 A3 9 24 OE (G) A2 10 24 OE (G) A2 10 23 A10 A1 11 A10 A1 11 22 CE (E) A0 12 23 22 DQ0 13 21 DQ7 DQ7 13 20 DQ6 DQ1 14 19 DQ5 DQ2 15 18 DQ4 VSS 16 17 DQ3 DQ5 DQ6 DQ0 14 15 16 17 18 19 20 DQ3 DQ4 21 VSS 12 DQ1 DQ2 A0 CE (E) 10205F-3 10205F-2 Notes: 1. JEDEC nomenclature is in parentheses. 2. The 32-pin DIP to 32-pin PLCC configuration varies from the JEDEC 28-pin DIP to 32-pin PLCC configuration. TSOP A11 A9 A8 A13 A14 NC PGM VCC VPP A16 A15 A12 A7 A6 A5 A4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 10205F-5 Standard Pinout Am27C010 2-57 AMD PIN DESIGNATIONS A0-A16 = Address Inputs CE (E) = Chip Enable Input DQ0-DQ7 = Data Input/Outputs OE (G) = Output Enable Input PGM (P) = Program Enable Input VCC = VCC Supply Voltage VPP = Program Voltage Input VSS = Ground 2-58 LOGIC SYMBOL 17 A0-A16 8 DQ0-DQ7 CE (E) PGM (P) OE (G) 10205F-4 Am27C010 AMD ORDERING INFORMATION UV EPROM Products AMD Standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of: AM27C010 -55 D C B OPTIONAL PROCESSING Blank = Standard Processing B = Burn-in TEMPERATURE RANGE C = Commercial (0C to +70C) I = Industrial (-40C to +85C) E = Extended Commercial (-55C to +125C) PACKAGE TYPE D = 32-Pin Ceramic DIP (CDV032) SPEED OPTION See Product Selector Guide and Valid Combinations DEVICE NUMBER Am27C010 1 Megabit (131,072 x 8-Bit) CMOS UV EPROM Valid Combinations AM27C010-55 AM27C010-70 AM27C010-90 AM27C010-120 AM27C010-150 AM27C010-200 AM27C010-255 Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. DC DC, DCB, DI, DIB DC, DCB, DE, DEB, DI, DIB DC, DCB, DI, DIB Am27C010 2-59 AMD ORDERING INFORMATION OTP Products AMD Standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of: AM27C010 -70 P C OPTIONAL PROCESSING Blank = Standard Processing TEMPERATURE RANGE C = Commercial (0C to +70C) I = Industrial (-40C to + 85C) PACKAGE TYPE P = 32-Pin Plastic DIP (PD 032) J = 32-Pin Rectangular Plastic Leaded Chip Carrier (PL 032) E = 32-Pin TSOP Standard Pinout (TS 032) SPEED OPTION See Product Selector Guide and Valid Combinations DEVICE NUMBER Am27C010 1 Megabit (131,072 x 8-Bit) CMOS OTP EPROM Valid Combinations AM27C010-70 AM27C010-90 AM27C010-120 AM27C010-150 AM27C010-200 AM27C010-255 2-60 Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. PC, JC, EC, PI, JI, EI Am27C010 AMD FUNCTIONAL DESCRIPTION Erasing the Am27C010 In order to clear all locations of their programmed contents, it is necessary to expose the Am27C010 to an ultraviolet light source. A dosage of 15 W seconds/cm2 is required to completely erase an Am27C010. This dosage can be obtained by exposure to an ultraviolet lamp--wavelength of 2537 A --with intensity of 12,000 W/cm2 for 15 to 20 minutes. The Am27C010 should be directly under and about one inch from the source and all filters should be removed from the UV light source prior to erasure. It is important to note that the Am27C010 and similar devices will erase with light sources having wavelengths shorter than 4000 A . Although erasure times will be much longer than with UV sources at 2537 A , exposure to fluorescent light and sunlight will eventually erase the Am27C010 and exposure to them should be prevented to realize maximum system reliability. If used in such an environment, the package window should be covered by an opaque label or substance. Programming the Am27C010 Upon delivery or after each erasure the Am27C010 has all 1,048,576 bits in the "ONE" or HIGH state. "ZEROs" are loaded into the Am27C010 through the procedure of programming. The programming mode is entered when 12.75 V 0.25 V is applied to the VPP pin, CE and PGM are at VIL, and OE is at VIH. For programming, the data to be programmed is applied 8 bits in parallel to the data output pins. Am27C010 CE input and VPP = 12.75 V 0.25 V, PGM Low and OE High will program that Am27C010. A high-level CE input inhibits the other Am27C010 devices from being programmed. Program Verify A verify should be performed on the programmed bits to determine that they were correctly programmed. The verify should be performed with OE and CE at VIL , PGM at VIH, and VPP between 12.5 V and 13.0 V. Auto Select Mode The auto select mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional in the 25C 5C ambient temperature range that is required when programming the Am27C010. To activate this mode, the programming equipment must force 12.0 V 0.5 V on address line A9 of the Am27C010. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address lines must be held at VIL during auto select mode. Byte 0 (A0 = VIL) represents the manufacturer code, and byte 1 (A0 = VIH), the device code. For the Am27C010, these two identifier bytes are given in the Mode Select Table. All identifiers for manufacturer and device codes will possess odd parity, with the MSB (DQ7) defined as the parity bit. Read Mode The Flashrite algorithm reduces programming time by using 100 s programming pulses and by giving each address only as many pulses as is necessary in order to reliably program the data. After each pulse is applied to a given address, the data in that address is verified. If the data does not verify, additional pulses are given until it verifies or the maximum is reached. This process is repeated while sequencing through each address of the Am27C010. This part of the algorithm is done at VCC = 6.25 V to assure that each EPROM bit is programmed to a sufficiently high threshold voltage. After the final address is completed, the entire EPROM memory is verified at VCC = VPP = 5.25 V. The Am27C010 has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip Enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE). Data is available at the outputs tOE after the falling edge of OE, assuming that CE has been LOW and addresses have been stable for at least tACC-tOE. Please refer to Section 6 for programming flow chart and characteristics. The Am27C010 has a CMOS standby mode which reduces the maximum VCC current to 100 A. It is placed in CMOS-standby when CE is at VCC 0.3 V. The Am27C010 also has a TTL-standby mode which reduces the maximum VCC current to 1.0 mA. It is placed in TTL-standby when CE is at VIH. When in standby mode, the outputs are in a high-impedance state, independent of the OE input. Program Inhibit Programming of multiple Am27C010 in parallel with different data is also easily accomplished. Except for CE, all like inputs of the parallel Am27C010 may be common. A TTL low-level program pulse applied to an Standby Mode Am27C010 2-61 AMD Output OR-Tieing System Applications To accommodate multiple memory connections, a twoline control function is provided to allow for: During the switch between active and standby conditions, transient current peaks are produced on the rising and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the output capacitance loading of the device. At a minimum, a 0.1-F ceramic capacitor (high frequency, low inherent inductance) should be used on each device between VCC and VSS to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on EPROM arrays, a 4.7-F bulk electrolytic capacitor should be used between VCC and VSS for each eight devices. The location of the capacitor should be close to where the power supply is connected to the array. Low memory power dissipation Assurance that output bus contention will not occur It is recommended that CE be decoded and used as the primary device-selecting function, while OE be made a common connection to all devices in the array and connected to the READ line from the system control bus. This assures that all deselected memory devices are in low-power standby mode and that the output pins are only active when data is desired from a particular memory device. MODE SELECT TABLE Pins CE OE PGM A0 A9 VPP Outputs VIL VIL X X X X DOUT Output Disable X VIH X X X X High-Z Standby (TTL) VIH X X X X X High-Z VCC 0.3 V X X X X X High-Z Program VIL VIH VIL X X VPP DIN Program Verify VIL VIL VIH X X VPP DOUT Program Inhibit VIH X X X X VPP High-Z Manufacturer Code VIL VIL X VIL VH X 01H Device Code VIL VIL X VIH VH X 0E Mode Read Standby (CMOS) Auto Select (Note 3) Notes: 1. VH = 12.0 V 0.5 V 2. X = Either VIH or VIL 3. A1-A8 = A10-A16 = VIL 4. See DC Programming Characteristics for VPP voltage during programming. 2-62 Am27C010 AMD ABSOLUTE MAXIMUM RATINGS OPERATING RANGES Storage Temperature OTP Products . . . . . . . . . . . . . . . -65C to +125C All Other Products . . . . . . . . . . . . -65C to +150C Commercial (C) Devices Ambient Temperature (TA) . . . . . . . 0C to +70C Ambient Temperature with Power Applied . . . . . . . . . . . . . -55C to +125C Voltage with Respect To VSS All pins except A9,VPP,VCC . -0.6 V to VCC + 0.5 V Industrial (I) Devices Ambient Temperature (TA) . . . . . -40C to +85C Extended Commercial (E) Devices Ambient Temperature (TA) . . . . -55C to +125C A9 and VPP . . . . . . . . . . . . . . . . -0.6 V to +13.5 V Supply Read Voltages VCC for Am27C010-XX5 . . . . . +4.75 V to +5.25 V VCC . . . . . . . . . . . . . . . . . . . . . . . -0.6 V to +7.0 V VCC for Am27C010-XX0 . . . . . +4.50 V to +5.50 V Notes: 1. Minimum DC voltage on input or I/O pins is -0.5 V. During transitions, the inputs may overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input and I/O pins is VCC + 0.5 V which may overshoot to VCC + 2.0 V for periods up to 20 ns. VCC for Am27C010-55 . . . . . . . +4.75 V to +5.25 V Operating ranges define those limits between which the functionality of the device is guaranteed. 2. For A9 and VPP the minimum DC input is -0.5 V. During transitions, A9 and VPP may overshoot VSS to -2.0 V for periods of up to 20 ns. A9 and VPP must not exceed 13.5 V for any period of time . Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. Am27C010 2-63 AMD DC CHARACTERISTICS over operating range unless otherwise specified. (Notes 1, 2, and 4) Parameter Symbol Parameter Description Test Conditions Min VOH Output HIGH Voltage IOH = -400 A 2.4 VOL Output LOW Voltage IOL = 2.1 mA VIH Input HIGH Voltage VIL Input LOW Voltage ILI Input Load Current VIN = 0 V to VCC ILO Output Leakage Current VOUT = 0 V to VCC Max Unit V 0.45 V 2.0 VCC + 0.5 V -0.5 +0.8 V 1.0 A 5.0 A C/I Devices 30 E Devices 60 VCC Active Current (Note 3) CE = VIL, f = 10 MHz, IOUT = 0 mA ICC2 VCC TTL Standby Current CE = VIH ICC3 VCC CMOS Standby Current CE = VCC 0.3 V 100 A IPP1 VPP Current During Read CE = OE = VIL, VPP = VCC 100 A ICC1 1.0 mA mA Notes: 1. VCC must be applied simultaneously or before VPP, and removed simultaneously or after VPP. 2. Caution: The Am27C010 must not be removed from (or inserted into) a socket when VCC or VPP is applied. 3. ICC1 is tested with OE = VIH to simulate open outputs. 30 30 25 25 Supply Current in mA Supply Current in mA 4. Minimum DC Input Voltage is -0.5 V. During transitions, the inputs may overshoot to -2.0 V for periods less than 20 ns. Maximum DC Voltage on output pins is VCC + 0.5 V, which may overshoot to VCC + 2.0 V for periods less than 20 ns. 20 15 10 1 2 3 4 5 6 7 8 9 10 15 10 -75 -50 -25 0 25 50 75 100 125 150 Temperature in C Frequency in MHz Figure 1. Typical Supply Current vs. Frequency VCC = 5.5 V, T = 25C Figure 2. Typical Supply Current vs. Temperature VCC = 5.5 V, f = 10 MHz 10205F-6 2-64 20 Am27C010 10205F-7 AMD CAPACITANCE Parameter Symbol CIN COUT CDV032 Parameter Description Test Conditions Input Capacitance Output Capacitance PL 032 PD 032 TS 032 Typ Max Typ Max Typ Max Typ Max Unit VIN = 0 9 12 8 12 8 12 10 12 pF VOUT = 0 13 15 11 14 11 14 12 14 pF Notes: 1. This parameter is only sampled and not 100% tested. 2. TA = +25C, F = 1 MHz SWITCHING CHARACTERISTICS over operating range unless otherwise specified (Notes 1, 3, and 4) Parameter Symbols JEDEC Standard tAVQV tACC tELQV tGLQV tCE tOE tEHQZ tGHQZ tDF (Note 2) tAXQX tOH Am27C010 Parameter Description Test Conditions -55 -70 -90 -120 -150 -200 -255 Unit Address to Output Delay CE = OE = Min Max VIL - 55 - 70 - 90 - 120 - 150 - 200 - 250 ns Chip Enable to Output Delay OE = VIL Min Max - 55 - 70 - 90 - 120 - 150 - 200 - 250 ns Output Enable to Output Delay CE = VIL Min Max - 35 - 35 - 40 - 50 - 65 - 75 - 75 ns Chip Enable HIGH or Output Enable HIGH, whichever comes first, to Output Float Min Max - 25 - 25 - 25 - 35 - 35 - 40 - 40 ns Output Hold from Addresses, CE, or OE, whichever occurred first Min Max 0 - 0 - 0 - 0 - 0 - 0 - 0 - ns Notes: 1. VCC must be applied simultaneously or before VPP, and removed simultaneously or after VPP. 2. This parameter is only sampled and not 100% tested. 3. Caution: The Am27C010 must not be removed from (or inserted into) a socket or board when VPP or VCC is applied. 4. Output Load: 1 TTL gate and CL = 100 pF Input Rise and Fall Times: 20 ns Input Pulse Levels: 0.45 V to 2.4 V Timing Measurement Reference Level: 0.8 V and 2 V inputs and outputs For the Am27C010-55: Output Load: 1 TTL Gate and CL = 30 pF Input Rise and Fall Times: 20 ns Input Pulse Levels: 0 V to 3 V Timing Measurement Reference Level: 1.5 V for inputs and outputs Am27C010 2-65 AMD SWITCHING TEST CIRCUIT 2.7 k Device Under Test +5.0 V CL Diodes = IN3064 or Equivalent 6.2 k CL = 100 pF including jig capacitance (30 pF for -55) 10205F-8 SWITCHING TEST WAVEFORM 2.4 V 2.0 V 2.0 V Test Points 0.8 V 0.8 V 0.45 V Input Output 10205F-9 AC Testing: Inputs are driven at 2.4 V for a logic "1" and 0.45 V for a logic "0". Input pulse rise and fall times are 20 ns. 2-66 Am27C010 AMD KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS OUTPUTS Must Be Steady Will Be Steady May Change from H to L Will Be Changing from H to L May Change from L to H Will Be Changing from L to H Don't Care, Any Change Permitted Changing State Unknown Does Not Apply Center Line is High Impedence "Off" State KS000010 SWITCHING WAVEFORMS 2.4 Addresses 0.45 2.0 0.8 2.0 0.8 Addresses Valid CE tCE OE Output High Z tOE tACC (Note 1) tOH Valid Output Notes: tDF (Note 2) High Z 10205F-10 1. OE may be delayed up to tACC-tOE after the falling edge of the addresses without impact on tACC. 2. tDF is specified from OE or CE, whichever occurs first. Am27C010 2-67