ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VDRM =
4500
V
ITGQM =
4000
A
ITSM =
25×103
A
VT0 =
2.1
V
rT =
0.58
mΩ
VDclink =
2800
V
Asymmetric Gate turn-off
Thyristor
5SGA 40L4501
Doc. No. 5SYA1208-02 March 05
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state
voltage VDRM VGR ≥ 2 V 4500 V
Repetitive peak reverse
voltage VRRM 17 V
Permanent DC voltage for
100 FIT failure rate VDC-link Ambient cosmic radiation at sea level
in open air. 2800 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state
current IDRM VD = VDRM, VGR ≥ 2 V 100 mA
Repetitive peak reverse
current IRRM VR = VRRM, RGK = ∞ Ω 50 mA
Mechanical data
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Mounting force Fm 36 40 44 kN
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Pole-piece diameter Dp ± 0.1 mm 85 mm
Housing thickness H 25.6 26.1 mm
Weight m 1.5 kg
Surface creepage distance D
s Anode to Gate 33 mm
Air strike distance Da Anode to Gate 14 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5SGA 40L4501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05 page 2 of 9
GTO Data
On-state
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Max. average on-state
current IT(AV)M Half sine wave, TC = 85 °C 1000 A
Max. RMS on-state current I
T(RMS) 1570 A
Max. peak non-repetitive
surge current ITSM 25×103 A
Limiting load integral I2t
tp = 10 ms, Tvj = 125°C, sine wave
After Surge: VD = VR = 0 V 3.1×106 A2s
Max. peak non-repetitive
surge current ITSM 40×103 A
Limiting load integral I2t
tp = 1 ms, Tvj = 125°C, sine wave
After Surge: VD = VR = 0 V 800×103 A2s
Characteristic values
Parameter Symbol
Conditions min typ max Unit
On-state voltage VT IT = 4000 A, Tvj = 125°C 4.4 V
Threshold voltage V(T0) 2.1 V
Slope resistance rT Tvj = 125°C
IT = 400...5000 A 0.58 mΩ
Holding current IH Tvj = 25°C 100 A
Turn-on switching
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Critical rate of rise of on-
state current diT/dtcr f = 200 Hz 500 A/µs
Critical rate of rise of on-
state current diT/dtcr
Tvj = 125°C,
IT = 4000 A, IGM = 50 A,
diG/dt = 40 A/µs f = 1 Hz 1000 A/µs
Min. on-time ton VD = 0.5 VDRM, Tvj = 125 °C
IT = 4000 A, di/dt = 300 A/µs,
IGM = 50 A, diG/dt = 40 A/µs,
CS = 6 µF, RS = 5 Ω
100 µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Turn-on delay time td 2.5 µs
Rise time tr 5 µs
Turn-on energy per pulse Eon
VD = 0.5 VDRM, Tvj = 125 °C
IT = 4000 A, di/dt = 300 A/µs,
IGM = 50 A, diG/dt = 40 A/µs,
CS = 6 µF, RS = 5 Ω 3.3 J
Turn-off switching
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Max. controllable turn-off
current ITGQM VDM ≤ VDRM, diGQ/dt = 40 A/µs,
CS = 6 µF, LS ≤ 0.3 µH 4000 A
Min. off-time toff VD = 0.5 VDRM, Tvj = 125 °C
VDM ≤ VDRM, diGQ/dt = 40 A/µs,
ITGQ = ITGQM,
RS = 5 Ω, CS = 6 µF, LS = 0.3 µH
100 µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Storage time tS 27 µs
Fall time tf 3 µs
Turn-on energy per pulse Eoff 14 J
Peak turn-off gate current IGQM
VD = 0.5 VDRM, Tvj = 125 °C
VDM ≤ VDRM, diGQ/dt = 40 A/µs,
ITGQ = ITGQM,
RS = 5 Ω, CS = 6 µF, LS = 0.3 µH 1100 A
5SGA 40L4501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05 page 3 of 9
Gate
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Repetetive peak reverse
voltage VGRM 17 V
Repetetive peak reverse
current IGRM VGR = VGRM 50 mA
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Gate trigger voltage VGT 1.2 V
Gate trigger current IGT Tvj = 25°C,
VD = 24 V, RA = 0.1 Ω 4 A
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Junction operating temperature Tvj -40 125 °C
Storage temperature range Tstg -40 125 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Rth(j-c) Double side cooled 11 K/kW
Rth(j-c)A Anode side cooled 20 K/kW
Thermal resistance junction to case
Rth(j-c)C Cathode side cooled 25 K/kW
Rth(c-h) Single side cooled 6 K/kW
Thermal resistance case to heatsink
(Double side cooled) Rth(c-h) Double side cooled 3 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ic)-th(j i
∑
=
τ
i 1 2 3 4
Ri(K/kW)
7.313 1.974 1.218 0.501
τi(s) 0.5400 0.0939 0.0117 0.0036
Fig. 1 Transient thermal impedance, junction to case
5SGA 40L4501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05 page 4 of 9
Fig. 2 On-state characteristics Fig. 3 Average on-state power dissipation vs.
average on-state current
Fig. 4 Surge current and fusing integral vs. pulse
width
5SGA 40L4501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05 page 5 of 9
Fig. 5 Forward blocking voltage vs. gate-cathode
resistance Fig. 6 Static dv/dt capability; forward blocking
voltage vs. neg. gate voltage or gate cathode
resistance
Fig. 7 Forward gate current vs. forard gate voltage Fig. 8 Gate trigger current vs. junction temperature
5SGA 40L4501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05 page 6 of 9
Fig. 9 Turn-on energy per pulse vs. on-state current
and turn-on voltage Fig. 10 Turn-on energy per pulse vs. on-state current
and current rise rate
Common Test conditions:
diG/dt = 40 A/µs
CS = 6 µF
RS = 5 Ω
Tj = 125 °C
Definition of Turn-on energy:
)0.1 I 0, (t G
20
0
GMT
s
Don IdtIVE ⋅==⋅= ∫µ
Definition of Turn-off energy:
)0.9 I 0, t ( T
40
0
TGQT
s
Doff IdtIVE ⋅==⋅= ∫µ
Fig. 11 Turn-on energy per pulse vs. on-state current
and turn-on voltage
5SGA 40L4501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05 page 7 of 9
0
2
4
6
8
10
12
14
16
18
0 500 1000 1500 2000 2500 3000 3500 4000
ITGQ [A]
Eoff [J]
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
QGQa [A]
VDM = VDRM
QGQa
Conditions:
VD = ½⋅VDRM
diGQ/dt = 40 A/µs
CS = 6 µF, RS = 5 Ω
Tj = 125°C
¾ VDRM
½ VDRM
0
2
4
6
8
10
12
14
0 500 1000 1500 2000 2500 3000 3500 4000
ITGQ [A]
Eoff [J]
Conditions:
VD = ½ V DRM, VDM = VDRM
diGQ/dt =40 A/µs
RS= 5 Ω
Tj = 125 °C CS = 6µF
Fig. 12 Turn-off energy per pulse vs. turn-off current
and peak turn-off voltage, extracted gate
charge vs. turn-off current
Fig. 13 Turn-off energy per pulse vs. turn-off current
and snubber capacitance
1
2
3
4
5
6
1000 1500 2000 2500 3000 3500 4000
IGQM [A]
Cs[µF]
Condition:
VD= ½⋅VDRM, VDM = VDRM
diGQ/dt = 40 A/µs
RS= 5 Ω, LS ≤ 300 nH
0
2
4
6
8
10
12
14
16
18
20
22
-10 0 10 20 30 40 50 60 70 80 90100110120
Eoff[J]
0
100
200
300
400
500
600
700
800
900
1000
1100
IGQM [A]
Eoff
0
5
10
15
20
25
30
35
40
45
50
55
025 50 75 100 125
,ts[µs]
0
100
200
300
400
500
600
700
800
900
1000
1100
tS
IGQM [A]
IGQM
Condition: V
D = ½ V DRM, VDM = VDRM
I
TGQ = 4000 A, di
GQ/dt = 40 A/µs
Tj = 125 °C
Tj [°C]
Fig. 14 Required snubber capacitor vs. max
allowable turn-off current Fig. 15 Turn-off energy per pulse, storage time and
peak turn-off gate current vs. junction
temperature
0
5
10
15
20
25
30
35
40
45
50
55
60
0 10 20 30 40 50 60
diGQ/dt [A/µs]
ts[s]
0
200
400
600
800
1000
1200
IGQM [A]
tS
IGQM
Conditions:
ITGQ = 3000 A
Tj = 125 °C
0
10
20
30
40
50
60
0 500 1000 1500 2000 2500 3000 3500 4000
ITGQ [A]
ts[s]
0
200
400
600
800
1000
1200
IGQM [A]
tS
IGQM
Conditions:
diGQ/dt =40 A/µs
Tj = 125 °C
Fig. 16 Storage time and peak turn-off gate current
vs. neg. gate current rise rate Fig. 17 Storage time and peak turn-off gate current
vs. turn-off current
5SGA 40L4501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05 page 8 of 9
Fig. 18 General current and voltage waveforms with GTO-specific symbols
5SGA 40L4501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1208-02 March 05
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Fig. 19 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse
avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs
and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR =
10… 15 V.
Related documents:
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SYA 2046 Cosmic Ray
5SZK 9104 Specification of enviromental class for pressure contact GTO, STORAGE available on request, please contact factory
5SZK 9105 Specification of enviromental class for pressure contact GTO, TRANSPORTATION available on request, please contact
factory
Please refer to http://www.abb.com/semiconductors for actual versions.
