LITE-ON SEMICONDUCTOR MBR2030CT thru 2060CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications B L M C D A K E PIN 1 2 3 E F I Case : TO-220AB molded plastic Polarity : As marked on the body Weight : 0.08 ounces, 2.24 grams Mounting position : Any TO-220AB MIN. MAX. 14.22 15.88 9.65 10.67 2.54 3.43 5.84 6.86 9.28 8.26 6.35 14.73 12.70 2.29 2.79 1.14 0.51 I J 0.30 0.64 K 3.53 4.09 L 3.56 4.83 M 1.14 1.40 2.92 N 2.03 All Dimensions in millimeter F G MECHANICAL DATA DIM. A B C D J N H H PIN 1 PIN 2 CASE PIN 3 G H MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward TC =125 C Rectified Current (See Fig.1) Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) VRRM VRMS VDC Voltage Rate of Change (Rated VR) dv/dt IF=10A @ TJ =25 C Maximum Forward IF=10A @ TJ =125 C Voltage (Note 1) IF=20A @ TJ =25 C IF=20A @ TJ =125 C @TJ =25 C Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =100 C Typical Junction Capacitance per element (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range MBR 2030CT 30 21 30 MBR 2035CT 35 24.5 35 MBR 2040CT 40 28 40 MBR 2045CT 45 31.5 45 MBR 2050CT 50 35 50 MBR UNIT 2060CT 60 V 42 V 60 V I(AV) 20 A IFSM 150 A VF 10000 0.57 0.84 0.72 0.1 15 IR CJ V/us 0.80 0.70 0.95 0.85 300 V mA 400 pF R0JC 2.0 C/W TJ TSTG -55 to +150 C NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal Resistance Junction to Case. -55 to +175 C REV. 3, 13-Sep-2001, KTHC08 RATING AND CHARACTERISTIC CURVES MBR2030CT thru MBR2060CT 15 10 5 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 20 150 125 100 175 75 50 25 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 1000 INSTANTANEOUS FORWARD CURRENT ,(A) 100 100 TJ = 100 C 10 1.0 TJ = 75 C 0.1 TJ = 25 C 0.01 MBR2030CT ~ MBR2045CT 10 MBR2050CT ~ MBR2060CT 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 120 140 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 TJ = 25 C, f= 1MHz CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 20 10 NUMBER OF CYCLES AT 60Hz 1000 MBR2030CT ~ MBR2045CT MBR2050CT ~ MBR2060CT 100 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS REV. 3, 13-Sep-2001, KTHC08