ZTX753DCSM PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 3 1 4 A 6 5 6.22 0.13 (0.245 0.005) 0.23 rad. (0.009) A= * DUAL SILICON PLANAR PNP 4.32 0.13 (0.170 0.005) 2.54 0.13 (0.10 0.005) 2 FEATURES 1.40 0.15 (0.055 0.006) 1.65 0.13 (0.065 0.005) 0.64 0.08 (0.025 0.003) 2.29 0.20 (0.09 0.008) 1.27 0.13 (0.05 0.005) TRANSISTORS * HERMETIC SURFACE MOUNT PACKAGE * CECC SCREENING OPTIONS * SPACE QUALITY LEVEL OPTIONS LCC2 PACKAGE Underside View PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 ABSOLUTE MAXIMUM RATINGS PER SIDE (TC = 25C unless otherwise stated) VCBO Collector - Base Voltage -120V VCEO Collector - Emitter Voltage -100V VEBO Emitter - Base Voltage -5V ICM Peak Pulse Current -6A IC Continuous Collector Current -2A PTOT Power Dissipation @ Tamb = 25C 1W Derate above 25C TjTSTG Operating And Storage Temperature Range R Junction - Ambient Thermal Resistance q J-A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 8mW/C -55 to 150C 125C/W Prelim. 7/00 Issue 3 ZTX753DCSM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions Min. V(BR)CBO Collector - Base Breakdown Voltage IC = 100mA -120 V(BR)CEO Collector - Emitter Breakdown Voltage IC = 10mA -100 V(BR)EBO Emitter - Base Breakdown Voltage ICBO Collector - Cut-off Current IEBO Emitter Cut-off Current IE = -100mA Max. Unit V -5 VCB = -100V -0.1 T = 100C -10 VEB = -4V IC = -500mA VCE(sat) Typ. IB = -50mA* -0.2 -0.3 Collector - Emitter Saturation Voltage IC = -1A IB = -100mA* -0.35 -0.5 IC = -2A IB = -200mA* -0.8 -1.0 Base - Emitter Saturation Voltage IC = -1A IB = -100mA* -1.0 -1.3 VBE(on) Base - Emitter Turn-On Voltage IC = -1A VCE = -2V* -0.95 -1.2 IC = -50mA VCE = -2V* 70 200 IC = -500mA VCE = 2V* 100 200 IC = -1A VCE = -2V* 55 110 IC = -2A VCE = -2V* 25 55 DC Current Gain A -0.1 VBE(sat) HFE m 300 V -- * Pulse test tp = 300ms , d 2% DYNAMIC CHARACTERISTICS Parameter (TA = 25C unless otherwise stated) Test Conditions Typ. Max. Unit 100 140 MHz fT Transition Frequency IC = -100mA VCE = -5V Cobo Output Capacitance VCB = -10V f = 1.0MHz Ton Switching Times IC = -500mA VCC = 10V 40 Toff Switching Times IB1=IB2=50mA 600 Semelab plc. f = 100MHz Min. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 30 pF ns Prelim. 7/00 Issue 3