Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 100 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ100 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 67N10 67 A
75N10 75 A
IDM TC= 25°C, pulse width limited by TJM 67N10 268 A
75N10 300 A
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-204 18 g
TO-247 6 g
TO-268 5 g
MegaMOSTMFET
N-Channel Enhancement Mode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 100 V
VGS(th) VDS = VGS, ID = 4 mA 2.0 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 250 µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 67N10 0.025 Ω
75N10 0.020 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
VDSS ID25 RDS(on)
100 V 67 A 25 mΩΩ
ΩΩ
Ω
100 V 75 A 20 mΩΩ
ΩΩ
Ω
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
zInternational standard packages
zLow RDS (on) HDMOSTM process
zRugged polysilicon gate cell structure
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
zFast intrinsic Rectifier
Applications
zDC-DC converters
zSynchronous rectification
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
zTemperature and lighting controls
zLow voltage relays
Advantages
zEasy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
zSpace savings
zHigh power density
DS91533F(9/03)
1
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2003 IXYS All rights reserved
TO-247 AD (IXTH)
(TAB)
TO-204 AE (IXTM)
G
D
TO-268 (IXTT)
GSD (TAB)
IXTH / IXTM 67N10
IXTH / IXTM 75N10
IXTT 75N10
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-268 (IXTT) Outline
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = ID25, pulse test 25 30 S
Ciss 4500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 pF
Crss 550 pF
td(on) 40 60 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 60 110 ns
td(off) RG = 2 Ω, (External) 100 140 ns
tf30 60 ns
Qg(on) 180 260 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 30 70 nC
Qgd 90 160 nC
RthJC 0.42 K/W
RthCK (TO-204, TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 67N10 67 A
75N10 75 A
ISM Repetitive; 67N10 268 A
pulse width limited by TJM 75N10 300 A
VSD IF = IS, VGS = 0 V, 1.75 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 200 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD (IXTH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH / IXTM 67N10 IXTH / IXTM 75N10
IXTT 75N10
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 3.42 .135
∅b .97 1.09 .038 .043
∅D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 7.93 .312
∅p 3.84 4.19 .151 .165
∅p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 13.33 .525
R1 4.77 .188
s 16.64 17.14 .655 .675
TO-204AE (IXTM) Outline
Pins 1 - Gate 2 - Source
Case - Drain
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/VG(th) - Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VGS(th)
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
ID - Amperes
0
20
40
60
80 75N10
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
RDS(on) - Normalized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0 20 40 60 80 100 120 140 160
RDS(on) - Normalized
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VGS = 10V
VGS = 15V
VGS - Volts
012345678910
ID - Amperes
0
25
50
75
100
125
150
TJ = 125°C
VDS - Volts
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ID - Amperes
0
50
100
150
200
8V
5V
VGS = 10V
9V
7V
6V
TJ = 25°C
ID = 37.5A
67N10
BVDSS
TJ = 25°C
TJ = 25°C
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold
Voltage
3
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2003 IXYS All rights reserved
IXTH / IXTM 67N10 IXTH / IXTM 75N10
IXTT 75N10
VDS - Volts
1 10 100
ID - Amperes
1
10
100
Gate Charge - nCoulombs
0 25 50 75 100 125 150 175 200
VGS - Volts
0
1
2
3
4
5
6
7
8
9
10
VSD - Volt
0.00 0.25 0.50 0.75 1.00 1.25 1.50
IS - Amperes
0
25
50
75
100
125
150
VDS - Volts
0 5 10 15 20 25
Capacitance - pF
0
1000
2000
3000
4000
5000
6000
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
D=0.2
D=0.02
D=0.5
D=0.1
D=0.05
Single pulse
Coss
Ciss
10µs
100µs
1ms
10ms
100ms
VDS = 50V
ID = 37.5A
IG = 1mA
Limited by RDS(on)
Crss
TJ = 125°C TJ = 25°C
D=0.01
f = 1MHz
VDS = 25V
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
to Drain Voltage
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH / IXTM 67N10 IXTH / IXTM 75N10
IXTT 75N10
