BSV 52 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage NPN Power dissipation - Verlustleistung 1.3 0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehause 1.1 2.9 0.1 0.4 1.9 Dimensions / Mae in mm 1=B 2=E 3=C NPN SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BSV 52 Collector-Emitter-voltage B open VCE0 12 V Collector-Base-voltage E open VCB0 20 V Emitter-Base-voltage C open VEB0 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) IC 100 mA Peak Collector current - Kollektor-Spitzenstrom ICM 200 mA Peak Base current - Basis-Spitzenstrom IBM 100 mA Junction temp. - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 20 V ICB0 - - 400 nA IE = 0, VCB = 20 V, Tj = 125/C ICB0 - - 30 :A IEB0 - - 100 nA Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 4 V 1 Collector saturation volt. - Kollektor-Sattigungsspg. ) 1 IC = 10 mA, IB = 0.3 mA VCEsat - - 300 mV IC = 10 mA, IB = 1 mA VCEsat - - 250 mV IC = 50 mA, IB = 5 mA VCEsat - - 400 mV ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 18 01.11.2003 Switching Transistors BSV 52 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Base saturation voltage - Basis-Sattigungsspannung 1) IC = 10 mA, IB = 1 mA VBEsat 700 mV - 850 mV IC = 50 mA, IB = 5 mA VBEsat - - 1.2 V DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 1 V, IC = 1 mA hFE 25 - - VCE = 1 V, IC = 10 mA hFE 40 - 120 VCE = 1 V, IC = 50 mA hFE 25 - - fT 400 MHz 500 MHz - - - 4 pF CEB0 - - 4.5 pF turn-on time ton - - 10 ns delay time td - - 4 ns tr - - 6 ns toff - - 20 ns ts - - 10 ns tf - - 10 ns Gain-Bandwidth Product - Transitfrequenz VCE = 10 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 5 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 1 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten rise time turn-off time storage time ICon = 10 mA IBon = 3 mA - IBoff = 1.5 mA fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Marking - Stempelung RthA 420 K/W 2) BSV 52 = B2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 19