1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
18 01.11.2003
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
BSV 52 Switching Transistors
NPN Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BSV 52
Collector-Emitter-voltage B open VCE0 12 V
Collector-Base-voltage E open VCB0 20 V
Emitter-Base-voltage C open VEB0 5 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (dc) IC100 mA
Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA
Peak Base current – Basis-Spitzenstrom IBM 100 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 20 V ICB0 – – 400 nA
IE = 0, VCB = 20 V, Tj = 125/CI
CB0 – – 30 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 4 V IEB0 – – 100 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
IC = 10 mA, IB = 0.3 mA VCEsat – – 300 mV
IC = 10 mA, IB = 1 mA VCEsat – – 250 mV
IC = 50 mA, IB = 5 mA VCEsat – – 400 mV
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
19
01.11.2003
Switching Transistors BSV 52
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 1 mA VBEsat 700 mV – 850 mV
IC = 50 mA, IB = 5 mA VBEsat – – 1.2 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 1 V, IC = 1 mA hFE 25 – –
VCE = 1 V, IC = 10 mA hFE 40 – 120
VCE = 1 V, IC = 50 mA hFE 25 – –
Gain-Bandwidth Product – Transitfrequenz
VCE = 10 V, IC = 10 mA, f = 100 MHz fT400 MHz 500 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 5 V, IE = ie = 0, f = 1 MHz CCB0 – – 4 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 1 V, IC = ic = 0, f = 1 MHz CEB0 – – 4.5 pF
Switching times – Schaltzeiten
turn-on time
ICon = 10 mA
IBon = 3 mA
- IBoff = 1.5 mA
ton – – 10 ns
delay time td– – 4 ns
rise time tr– – 6 ns
turn-off time toff – – 20 ns
storage time ts– – 10 ns
fall time tf– – 10 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2)
Marking - Stempelung BSV 52 = B2
