2SD1664
NPN Epitaxial
Planar Silicon
Transistors
Features
• Complements to 2SB1132
• Low collector-to-emitter saturation voltage.
• Fast switching speed.
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 32 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current 1.0 A
PC Collector dissipation 500 mW
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(IC=50uAdc, IE=0) 40 --- --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=1.0mAdc) 32 --- --- Vdc
V(BR)EBO Collector-Emitter Breakdown Voltage
(IE=50uAdc, IC=0) 5.0 --- --- Vdc
ICBO Collector Cutoff Current
(VCB=20Vdc,IE=0) --- --- 0.5 uAdc
IEBO Emitter Cutoff Current
(VEB=4.0Vdc, IC=0) --- --- 0.5 mAdc
ON CHARACTERISTICS
hFE-1 DC Current Gain
(IC=100mAdc, VCE=3.0Vdc) 82 --- 390 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=0.5Adc, IB=50mAdc) 0.4Vdc
fT Gain-Bandwidth product
(VCE=5V, IC=50mA, f=100MHz ) --- 150 --- MHz
Cob Out Capacitance
(VCB=10V, f=1.0MHz,IE=0) --- 15 --- pF
hFE [1] CLASSIFICATION
Rank P Q R
Range 82-180 120-270 180-390
SOT-89
1. Base
2. Collector
3. Emitter
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: A 2011/10/27
TM
Micro Commercial Components
www.mccsemi.com
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Marking DAP DAQ DAR
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
B
A
E
D
GH
F
K
J
C
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1.55
.061 REF.
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MCC
Revision: A 2011/10/27
TM
Micro Commercial Components
www.mccsemi.com
2 of 2
Ordering Information :
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Device Packing
Part Number-TP
Tape&Reel;1Kpcs/Reel