Die no. A-38 PNP small signal transistor These epitaxial planar PNP silicon transistors are gold doped. Features * available in the following packages: SST3 (SST, SOT-23) SMT3 (SMT, SC-59), see page 300 * collector-to-emitter breakdown voltage BVcep = 40 V (min) at le =10mA * low capacitance, Cg, = 4 pF (max) at * complete amplifier and switching specifications * current gain specified from 10 pA to 10 mA e high transition frequency, typically f = 250 MHz (min) at lo = 10 MA Device types Package style Part number Part marking SST3 (soT-23) |$ST3906 R2A SMT3 (8c-59) _ |MMST3906 R2A UMT3 (SOT-323) UMT3906 R2A Applications * general purpose switching * amplifier Dimensions (Units : mm) SST3 2,940.2 1940.2 0.9579-% [v.95 0.95] 4540.1 0.8 Min. foley nara Ate od a 4 JAF} +0. 0.15 =0.08]| = 0:98, 6 , 0.96 TOP view | [0.47245 ve (1) Emitter (2) Base (3) Collector SMT3 2.940.2 1.90.2 Pea 0.840.1 0.8 Min Eo! oy ESE les) mas || eis e EP at] a 0.15 *eio}] 085 Tos TOP VIEW | log 7! Each toad has same dimensions (1) Emitter (2) Base (3) Collector UMT3 2.020.2 1.30.1 0.940.1 rc 0.65 0.65 ! i] # on. Be "| i Each lead has same dimensions a 0.3*9' 0.1840.05 TOP VIEW (1) Emitter (2) Base (3) Collector 316 RonmM Surface Mount TransistorsTransistors (US/European) PNP A-38 Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Collector-to-base voltage Veso 50 Vv Collector-to-emitter voltage | Voeo 40 Vv Emitter-to-base voltage Veso 5 Vv Collector current Ic 200 mA |DC SST3 (SOT-23) 200 iosipatl on SMT3 (SC-59) Po 200 mW _ |For derating, see derating curve following UMT3 (SOT-323) 200 Junction temperature T; -55 ~ +150 C Electrical characteristics (unless otherwise noted T, = 25C) (Sheet 1 of 2) Parameter Symbol| Min |Typical) Max Unit Conditions Collector-to-base _ breakdown voltage BVcpo | 50 70 Vic = 10 nA Collector-to-emitter _ breakdown voltage BVceo | 40 60 Vi |lc=10mA Emitter-to-base _ breakdown voltage BVEBo 5 8 Vi le = 10 pA Collector cutoff current IcBo 50 nA |Vog=25V Emitter cutoff current lEBo 50 nA |Veg=4V 50 Ic =0.1 MA, Veg =1.0V 70 Io = 1.0 mA, Voe= 1.0V 100 175 300 Io= 10 mA, Voe = 10V DC current gain hee 60 ic = S50 MA, Veg=1.0V 30 Io = 100 mA, Voe= 1.0V 80 lc = 50 mA, Vee =50V 60 Io = 100 mA, Voce =5.0V Collector-to-emitter Vy 0.8 0.20 y_ [lefla= 10 mA1-0 mA saturation voltage CE(sat) 0.13 | 0.30 Io/lg = 50 MA/S MA Base-to-emitter saturation | \, 0.70 | 0.85 V Ic/lg = 10 MA/1.0 mA voltage BE(sat) 0.75 | 0.95 Ic/lg = 50 mA/S MA AC current gain Nig 100 400 Ico = 1.0 MA,/10 V, f= 1 kHz Collector output _ nee capacitance Cob 2 4 pF Vos =5.0V, le =0, f= 1 MHz Surface Mount Transistors RoONmM 317A-38 Transistors (US/European) PNP Electrical characteristics (unless otherwise noted T, = 25C) (Sheet 2 of 2) Parameter Symbol| Min {Typical) Max Unit Conditions capecttance Cin 4 6 pF |Veg =5.0V, Io =0,f=1 MHz Transition frequency fr 250 300 MHz |Io=10 MA, Veg = 20 V, f = 100 MHz Noise figure NF 2 5 dB ce on ye, Voe ie V, Aig = 1 kQ, Rise time t 35 ns jlo =10 MA, Ipy = 1.0MA, Veco =3 V Delay time tg 35 ns [Io = 10 MA, Ig, = 1.0MA, Veg =3 V Turn on time ton 40 70 ns {ig = 10 mA, Ip, = 1.0 MA, Veg =3 V Storage time ts 200 ns {Io = 10 mA, Igy =Igo = 1.0 MA Fall time ty 50 ns {ig = 10 MA, Ip; = Igo = 1.0 MA Turn off time toft 120 250 ns |Ilc=10mMA, !5, = Igo = 1.0mMA Note: Minus sign for PNP transistor is omitted Electrical characteristic curves 10 Ta=25C an ZT 10 | <e 25 \ Ie-COLLECTOR CURRENT (mA) > nn 10 th Ip=O KA 0 10 20 Veg-COLLECTOR-EMITTER VOLTAGE (V) Figure 1 Vee (sat) COLLECTOR EMITTER SATURATION VOLTAGE () 0.3 0.2 0.) Q 0.1 1.0 10 Ic EMITTER COLLECTOR CURRENT (mA) Ip-Ig= 10 Tam 25C 100 Figure 2 318 Surface Mount TransistorsTransistors (US/European) PNP A-38 hee-DC CURRENT GAIN 0.1 1.0 10 100 1000 Ie-COLLECTOR CURRENT (mA) Figure 3 Ta= 125C Ta=25C Ta=~55C hee-DC CURRENT GAIN a! 1.0 10 100 1000 Ie-COLLECTOR CURRENT (mA) Figure 4 500 z $ 100 5 ive} e co > oO So + 2 = (0 5 0.01 0.1 1.0 10 100 Ic-COLLECTOR CURRENT (mA) Figure 5 Surface Mount Transistors Roum 319A-38 Transistors (US/European) PNP oo @ tc/Ip = 10 Ta =25C > nN Vae(saty ASE EMITTER SATURATION VOLTAGE (V) = uw g 3 > z 5 1.0 ec wd E 0.8 a w 0.6 <= 3 0.4 S 9.2 cS = 9 0.4 1.0 10 100 0.1 1,0 10 100 Ig-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) Figure 6 Figure 7 1000 (000 Ta=25C Ic/1g= 10 gz y 100 E 100 . # 3S = z g FE & , 10 = 10 l J 1.0 10 100 10 Ic~COLLECTOR CURRENT (mA) Ie-COLLECTOR CURRENT (mA) Figure 8 Figure 9 1000 c= 101g, = 10la2 1000 1= (lp) = (lap Ta=25C Ta=25C 2 = ~~ w & Zz z w 100 F 100 gO & d 5 i. 7 a 8 10 {0 (.0 10 100 1.0 10 100 Ip-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) Figure 10 Figure 11 320 ROAM Surface Mount TransistorsTransistors (US/European) PNP A-38 f= (MHz Ta=25C s Ww 2 5 g 5 E Gi & : . } 0.1 { 10 100 ot 10 100 REVERSE BIAS VOLTAGE (V) Ie-COLLECTOR CURRENT (mA) Figure 12 Figure 13 = Ic=1 g < hie =4.08k2 ~ = hfe = 146 5 2 hre=2.20% 10-4 g hoe = 34, 3 : ; 3 a ; z = 3 g g oe 3 . r I 10 100 0.1 I 10 100 Ie-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) Figure 14 Figure 15 a= Voge =5V fc= 100 nA Rs=10k0 NF-NOISE FIGURE (dB) 10 100 tk 10k 100k f-FREQUENCY (Hz) Figure 16 Surface Mount Transistors ROM 321A-38 Transistors (US/European) PNP On < p 3 4, (00n w 5 10 5 In | 8 In 8 xo 0.In 0 25 50 75 100 128Ss180 Ta-AMBIENT TEMPERATURE (C) Figure 17 [00k g W 10k = : tk V oe 100 0.01 0.1 \ 10 Ic-COLLECTOR CURRENT (mA) Figure 19 120 00 z Q kK = 80 3 Q ; 60 * 40 2 S 20 a a 9 25 50 75 = 100125150 Ta AMBIENT TEMPERATURE (C) Figure 21 100k 10k Rg-SOURCE RESISTANCE (0) Ta= 25C Vee =5V f= 10kH 100 |OkHz 0.0) 0.1 l 10 Ic-COLLECTOR CURRENT (mA) Figure 18 100k 2 Rs-SOURCE RESISTANCE (0) = 100 0.0) QO. I Ie-COLLECTOR CURRENT (mA) Figure 20 322 Surface Mount Transistors