
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
GS1A-L
THRU
GS1M-L
1 Amp
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAJ)
Features
• For Surface Mount Applications
• Extremely Low Thermal Resistance
• Easy Pick And Place
• High Temp Soldering: 250°C for 10 Seconds At Terminals
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .078 .095 1.98 2.42 1
B .081 .087 2.06 2.21
C --- .005 --- .127
D --- .02 --- .51
E .030 .060 .76 1.52
F .065 .084 1.65 2.13
G .194 .220 4.93 5.59
H .157 .177 3.99 4.50
J .100 .110 2.57 2.79
Maximum Ratings
• Operating Temperature: -65°C to +175°C
• Storage Temperature: -65°C to +175°C
• Maximum Thermal Resistance; 15°C/W Junction To Lead
Microsemi
Part
Number Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
GS1A-L GS1A 50V 35V 50V
GS1B-L GS1B 100V 70V 100V
GS1D-L GS1D 200V 140V 200V
GS1G-L GS1G 400V 280V 400V
GS1J-L GS1J 600V 420V 600V
GS1K-L GS1K 800V 560V 800V
GS1M-L GS1M 1000V 700V 1000V
Electrical Character istics @ 25 °C U nless Otherwise Specified
Average Forward
current IF(AV) 1.0A TJ = 75°C
Peak Forward Surge
Current IFSM 30A 8.3ms, half sine,
TJ = 150°C
Maximum
Instantaneous
Forward Voltage VF1.1V IFM = 1.0A;
TJ = 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR10µA
50µATJ = 25°C
TJ = 125°C
Maximum Reverse
Recovery Time Trr 1.8µsIF=0.5A, IR=1.0A,
Irr=0.25A
Typical Junction
Capacitance CJ15pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300 µsec, Duty cycle 2% 0.075”
0.085”
0.095
SUGGESTED SOLDER
PAD LAYOUT
H
G
D
Cathode Band