INTERNATIONAL RECTIFIER Le O ff yassuse ooo7ee 3 &f Preliminary Data Sheet No. PD-9.478A T-37-13 INTERNATIONAL RECTIFIER | TaR HEXFET TRANSISTORS IRH254 N-CHANNEL | s RAD HARD 250 Volt, 0.192, Rad Hard HEXFET = Product Summary International Rectifier's RAO HARD HEXFETs demonstrate excellent threshold voltage stability and Part Number BVpss_| Rps(on) Ip breakdown voltage stability at total radiation doses as high IRH254 250V 0.190 19A as 1 megarad. In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 101 rads (Si)/seo, ang retiirn 0 normal oeeTSEU) test a few microseconds. Single Event Upset testing o . International Rectifier RAD HARD HEXFETs has FEATURES: demonstrated virtual immunity to SEU failure. Since RAD . HARD HEXFETs use International Rectifiers HEXFET Ml Radiation Hard technology, the user can expect the highest quality and reliability In the industry. @ Repetitive Avalanche Ratings The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage Mm Dynamic dv/dt Rating control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio gy Ease of Paralleling amplifiers, and high energy pulse circuits. m@ Simple Drive Requirements 199410785 ag yay CASE STYLE AND DIMENSIONS nwo | wae SB THO ay 19,94 (0.785) 4 seats MAX. DIA. | | <t 160 10.0631 9,4 42.12 (0.477) Tao 057 {- 1126 (0 443} TWO PLACES TWO PLACES 412 (0 16: 25 80.01 0165 Ter a Teo 25 00 10 9645 TWO PLACES mi 17 1410 6751 A , 16 64 10 6551 3922 11540 : 3B 7911 527) 30.40 11 1971 000 tah 1.60 (0.063) MAX. DIA. 39.22 (1.544) +i rn n 0 MAX. 1 MEASURED AT SEATING PLANE Conforms to JEDEC Outline TO-204AE (Modified TO-3) Dimensions in Millimeters and (Inches) G-739INTERNATIONAL RECTIFIER IRH254 Device LE D a 48SS4S2 go0d7b3 5 Pre-Radiation r . T-39-13 Pre-Radiation Absolute Maximum Ratings P, 1RH254 Units Ip @ Te = 25C Continuous Drain Current 19 A Ip @ Tc = 100C Continuous Drain Current 12 A lom Pulsed Drain Current @ 76 A Pp @ Te = 26C Max. Power Dissipation 150 Ww Linear Derating Factor 1.2 WiK Ves Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @) 1200 mJ (See Fig. 26) aR Repetitive Avalanche Current @ 19 A {See Energy Limitations) Ear Repetitive Avalanche Energy @ Ss mJ (See Current Limitations) dVidt Peak Commutating dVidt @ 48 Vins (See Fig. 29) Ty Operating Junction -55 to 150 c TstG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s} c Pre-Radiation Electrical Characteristics @ Ty = 25C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BVpsg_Drain-to-Source Breakdown Voltage 250 > - v Veg = WV Ip = 1 mA Rpsjon) Static Orain-to-Source _ 0.16 0.49 a Ves = 12V, Ip = 10A On-State Resistance Ipfon} - On-State Drain Current 19 - - A Vos > !pion} * Rpston) Max. Veg = 12V Vasith) Gate Threshold Voltage 2.0 _ 5.0 v Vos = Vas. 'p = 1 mA fs Forward Transconductance ) 4.2. 6.3 - Ss Ww) Vos = 10V, Ips = 10A Ipgs Zero Gate Voltage Drain Current = - 1 mA Vos = 250V, Vag = OV - 1 Vps = 200V Ves = OV, To = 125C less Gate-to-Source Leakage Forward - 100 nA Veg = 20V loss Gate-to-Source Leakage Reverse _ - 100 n& Veg = ~20V Qq Total Gate Charge = 100 150 nc Veg = 12V, Ip = 194 Qgs Gate-to-Source Charge _ 22. 33 ac 285, aN Ogg Gate-to-Drain (Milter) Charge 4 62 nc (Independent of operating temperature) td{on) _Turn-On Delay Time = 23 _ ns Vpp = 125V, Ip = 194, Rg = 6.22 t Rise Time - rk} - ns Rp = 6.22 tg(ofn - Turn-Off Delay Time - 66 - ns See Fig. 27 ty Fall Time - 44 - ns (Independent of operating temperature) Lp internal Drain Inductance - 5.0 - nH Measured from the drain Modified MOSFET lead, 6mm (0.25 in.) from symbol showing the package to center of die. intemal inductances. Ls Intema! Source Inductance - 13 - nH Measured from the source tead, 6mm (0.25 in.) from package to source bonding pad. : Cigg Input Capacitance ~ 3400 _ pF Ves = OV, Vpg = 25V Coss Output Capacitance =_ 490 = pF f = 1.0 MHz Cis Reverse Transfer Capacitance - 81 _ pF See Fig. 22 Source-Drain Diode Ratings and Characteristics Parameter Min. TW. Max. Units Test Conditions Ig Continuous Source Current _ _ 19 A Modified MOSFET symbol showing the integral {Body Diode} Reverse p-n junction rectifier. ism ales Sous open -|- | |. Vgp __ Diode Forward Voltage = 2.0 Vv Tq. = 28C, Ig = 194, Vgg = OV tr Reverse Recovery Time - 270 570 ns Ty = 25C, Ip = 19A, dipfdt = 100A/ps Ore Reverse Recovery Charge - 6.2 14 aC ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. Thermal Resistance | Rthuc Junction-to-Case = - 0.83 KW Rincs _ Case-to-Sink - 0.42 - KAW Mounting surface flat, smooth, and greased RinJA -Junction-to-Ambient _ = 30 KAW Typical socket mount G-740INTERNATIONAL RECTIFIER Post-Radiation LLE D a 4Y8SS4S2 GOOW7LY ? i IRH254 Device T-39-13 Radiation Performance of Rad Hard HEXFETs International Rectifier Radiation Hard (Rad Hard) HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in low dose rate (total dose) and high dose rate (gamma dot") environments. Low dose rate testing is performed following MIL-STD-750C, test method 1019. The lot is evaluated with two different test circuits, Device performance is presented in table 1. The values in table 1 will be met for either of the two low dose rate test circuits that are used, Refer to notes and @. In addition, Rad Hard HEXFETs have been characterized for their post radiation response. Typical curves showing radiation response as well as post radiation response appear in figures 1 through 8. The two test circuits used during low dose rate exposures are shown in figure 11. The first test circuit biases the gate electrode at 12 volts with respect to the drain and source electrodes (see fig. 11a). In general, a Table 1. Low Dose Rate 12 volt V@gg steady state bias is a worst case condition for the on-state parameters of the device (eg. VGsith), RDS(on), 9fs etc.). The second test circuit biases the drain electrode with respect to the source and gate electrodes at 80% of the rated BVpss (pre-radiation) (fig. 11b). The steady state Vpsg bias equal to 80% of the rated BVpss (pre-radiation) is considered a worst case test condition for BVpssg (post-radiation). High dose rate (gammaz-dot) testing is done using a dose rate set at 1.5-2.0 x 1012 rads (Si)/sec, The device is exposed to this rate with 60% of its full rated breakdown voltage applied. Photocurrent and transient voltage waveforms are shown in figure 10. With 60% of the rated breakdown voltage applied, the device will survive the maximum rated di/dt. The device performance Is presented in table 2. The test circuit used for this test is shown in figure 12. In addition to these tests, Radiation Hard HEXFETs have been characterized in neutron and heavy ion SEU environments (see fig. 9 and table 3 respectively). 100K Rads (Si) | o5qK | SooK | 1000K Parameter @ Min. | Max. |Rads (Si Rads {Sif Rads (Sil]_ Units Test Conditions Vesith) Gate Threshold Voltage 1 6 See Fig. 1 & 6 v Ves = Vos: |p = 1 mA RpSion) Static Drain-to-Source ~ | 025 @ Q | Vg@g= 12M, Ip = 10A On State Resistance Sts Forward Transconductance ) 3.95 - See Fig. 2 S (0) | Vpg = 10V, Ip = 10A Ipfon) ~~ On-State Drain Current v Ming c See Fig. 3&7 A Vas = 12V, Vps = Ves c= 10 Min. @ To = 100C 8Vpss _Drain-to-Source 200 Min. See Fig. 4 Vv Ves = Vv. Ip = 1 mA Breakdown Voltage tpsg Zero Gate Voltage 1 Max. See Fig. 5 & 8 mA | Vpg = 200, Vgg = 0 Drain Current Iggg Gate-to-Source 100 Max. 100 Max. nA | Veg = +20V Leakage Forward Vsp Diode Forward Voltage 2.0 Max. 2.0 Max. Vv To = 258C, Ig = 17A, Vgg = OV Table 2. High Dose Rate 10! Rads (Silisec 10!2 Rads (Si/sec Parameter Min, Typ. Max. Min. Typ. Max. | Units Test Conditions Vpss __Dralin-to-Source Voltage - - 250 _ - 150 Vv Applied drain-to-source voltage during gamma-dot Ipp - 160 - - 15 - A Peak radiation induced photo-current di/dt = - 250 - - 7.5 | Alpsec | Rate of rise of photo-current ly 1 - - 20 - - BH Circuit inductance required to limit difdt Table 3. Single Event Upset Test Conditions LET (Si) Range Parameter Typ. Units lon (MeVimgicm2) (um) Vos @ 210 Vv Copper 30 ~40 @ See Figures 13 through 29 for pre-radiation Pulse width < 300 ps; Duty Cycle < 2% This test is performed using a flash xray curves. @ Repetitive Rating; Pulse width limited by maximum junction temperature (see figure 17) @ @ Vpp = 50V, Starting Ty = 25C, L = 5.3 mH, Rg = 259, Peak I_ = 19A. isp < 19A, dildt < 180 Aus, Vop = 8Voss- Suggested Rg = 6.20 High Tota! Dose irradiation with Vgg Bias. +12 volt Vgg applied and Vpg = 0 during source operated in the e-beam mode lenergy ~2.5 Mev). See figure 12. irradiation per MIL'STD-750C, method 1019. (See @ Study sponsored by NASA. 210 voits figure 11a} was the maximum available voltage source during the test High Total D irradiation with Vps Bias. High Total Dose Irradiation with Vpg Bi To be determined Vps = 0.8 rated BVpsg (pre-radiation) applied and Veg = 0 during irradiation per MILSTD-750C, method 1019. {See figure 11b} G-741INTERNATIONAL RECTIFIER IRH254 Device 10 ANNEAL TIME < 10 MINUTES Ves = Vog ANNEAL BIAS, Vegg = 12V = 1mA ANNEAL TEMPERATURE = 25C Vesth (VOLTS) 0 Pre 108 RADS (Si) 408 Fig. 1 Typical Response of Gate Threshold Voltage Vs. Total Dose Exposure Ipjon) (AMPERES) Veg = 12V Veg = ev @ Ves = Vos ANNEAL TIME < 10 MINUTES ANNEAL BIAS, Vggg = 12 VOLTS ANNEAL TEMPERATURE = 25 C 0 58 Pre 2 5 108 2 5 406 RADS (Si} Fig. 3 Typical Response of On-State Drain Current Vs. Total Dose Exposure G-742 LLE D i 4assuS@a og0d7bS 4 i Post-Radiation T-39-13 a) Vpg = 10 VOLTS ip = 10 AMPS gfs (SIEMENS) 0 Pre 108 RADS (Si) 408 Fig. 2 Typical Response of Transconductance Vs. Total Dose Exposure Ipsg = 1 mA ANNEAL BIAS, Vag = Vos = 0 VOLTS ANNEAL TEMPERATURE = 25 C ANNEAL < 10 MINUTES BVpsg (VOLTS) 109 RADS (Si) Fig. 4 Typical Response of Drain-to-Source Breakdown Vs. Total Dose Exposure LLE D i 48SS4S2 OOOI?bb O i Post-Radiation IRH254 Device INTERNATIONAL RECTIFIER T-39-13 103 p= 55 = Voss = 200 V 1000 Krad Ves = Vps s-- ANNEAL TIME < 10 MINUTES 500 Krad Ip = 1mA mm ANNEAL BIAS, Vggg = 12V @ 250 Krad ANNEAL BIAS, Vggg = 12 VOLTS ANNEAL TEMPERATURE = 25 C 100 Krad ANNEAL TEMPERATURE = 25 C 2r- @ 50 Krad 10? @ = & sp 2 En 9 = _ = 3 5 g tr $ ~ 10 = sf 2 Le 1@= 5s 0 Pre 2 5 0 2 5 406 io 2 2 5 43 2 5 494 RADS (Si) TIME (MINUTES) Ipyon) (AMPERES) Fig. 5 Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Vgg = 12 VOLTS 000 Krad Ves = Vos 500 Krad ANNEAL BIAS, Vegg= 12 VOLTS @ 250 Krad ANNEAL TEMPERATURE = 25 C A 100 Krad 60 Krad a fc 7 B oO 402 5 2 5 TIME (MINUTES) 404 Fig. 7 Typical Post Radiation Annealing Response of On-State Drain Current Vs. Time G-743 Fig. 6 Typical Post Radiation Annealing Response of Gate Threshold Voltage Vs. Time 125 Vpss = 200V VY 1000 Krad ANNEAL BIAS, Vegg = 12 VOLTS W500 Krad ANNEAL TEMPERATURE = 25 @ 250 Krad - 100 A 100 Krad . 50 Krad 75 50 25 io 2 5 402 5 TIME (MINUTES) 18 5 194 Fig. 8 Typical Post Radiation Annealing Response of Zero Gate Voltage Drain Current Vs. Time IRH254 Device INTERNATIONAL RECTIFIER 0.300 RADIATION TEST CONDITIONS: Ves = Vos = 0 VOLTS 0.270 0.240 Rps(on) (CHMS) 0.210 0.180 0.150 Pre 2 5 49l2 2 5 ols 2 NEUTRON FLUENCE (NEUTRON/CM2) Fig. 9 ~ On Resistance Vs. Neutron Fluence Level! Fig. 11a Gate Stress of Vass Equals 12 Volts During Radiation Vpp = 08 Bypgg Fig. 11b Vpgg Stress Equals 80% of Bvypss During Radiation LLE D Bf vsssuse cooqeL? 2 i Post-Radiation T-39-13 290 2 S 160 na 2 0 0 2 4 6 8 10 TIME (uS) Ips (AMPERES) 5 4914 9 2 4 6 8 10 TIME (uS) Fig. 10 Typical Transient Response of Rad Hard HEXFET During 1 x 1012 Rad (Si)/Sec Exposure (See Test Circuit 12) Voo 0.82 uF T 1500 pF FLASH 800 voc S00" J iweur ti =" ~ i = = ub DUT. 1.6 pF I- Vpg MEASURE 500 TERMINATED ly O Ip MEASURE 502 TERMINATED PEARSON PULSE CURRENT TRANSFORMER MOCEL 411 0.1 VOLT/AMP WITH LOAD IMPEDANCE OF 1 MEGOHM WITH 20 pF 0.05 VOLT/AMP WITH 502 TERMINATION 5000 AMPS MAX. PEAK OUTPUT Fig. 12 High Dose Rate (Gamma Dot) Test Circuit G-744INTERNATIGNAL RECTIFIER L1 D i 4855452 0009768 4 f - Pre-Radiation IRH254 Device T-39-13 402 Vos =2xX Yes 5 ig Go G xc & Ht z 2 * & b WW ii < & g a 3 3 2 A A 4 zx < a a : 5 o a H 2 O.4 25 50. 75 4100 125 0 3 6 9g 42 15 Vpg: DRAIN-TO-SQURCE VOLTAGE (VOLTS) Veg: GATE-TO-SQURCE VOLTAGE (VOLTS) Fig. 13 Typical Output Characteristics Fig. 14 Typical Transfer Characteristics 30 103 5 oH 24 B 2 rr ul 402 Ww Wi z = 5 s = . 8 - 2 Zz 5 fie # 10 a =z rn > oS 5 5 42 z z ei i << < 2 & ; 4 P 6 2s Tp=25C 2|]Ty=150C . . 0 9.4 ISINGLE_PULSE 0 2 4 6 8 0 42 5 419 2 5 492 2 5 493 Vog: DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vog. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 15 Typical Saturation Characteristics Fig. 16 Maximum Safe Operating Area G-745INTERNATIONAL RECTIFIER IRH254 Device LLE DO oO = THERMAL RESPONSE (Zp yc) m ee Oo 1 @ 1074 4073 fa s a 5452 OGOI?bY b&b Pre-Radiation i 4a T-39-13 Al] ets te LI NOTES; 1. DUTY FACTOR, D=t,/to 2. PEAK Ty=Pom X ZthJC + Te 1072 0.4 4 40 t4, RECTANGULAR PULSE DURATION (SECONDS) Fig. 17 Maximum Effective Transient Thermal !mpedance, Junction-to-Case Vs. Pulse Duration 10 TAANSCONODUCTANCE (SIEMENS) Dts: Ton: REVERSE DRAIN CURRENT (AMPERES) 6 12 18 24 Tp. DRAIN CURRENT (AMPERES) 30 Fig. 18 Typical Transconductance Vs. Drain Current 102 2 QO. oC) 0.4 0.8 1.2 1.6 Ven: SOURCE-TO-DRAIN VOLTAGE (VOLTS) 2.0 Fig. 19 Typical Source-Drain Diode Forward Voltage G-746INTERNATIONAL RECTIFIER Pre-Radiation BVpgg. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) CAPACITANCE (pF) c, 1.05 0.95 0.85 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ty. JUNCTION TEMPERATURE ( 9c) Fig. 20 Breakdown Voltage Vs. Temperature 7500 ~ ~ eg = 8% Fe Cigg = Cgg + Cgq: Cys SHORTED 6000 rss * ad Coss = Cys * Cgs Cgq / (Cgs + Cgg) Cys + Cgq 4500 3000 1500 ss mt s 1 2 5 10 2 5 Vos: DRAIN-TO-SOURCE VOLTAGE (VOLTS) 102 Fig. 22 Typical Capacitance Vs. Drain-to-Source Voltage G-747 LLE D Bf vassuse 0009770 2 IRH254 Device T-39-13 ~ (NORMALIZED) > Ros (an) DRAIN-TO-SOURCE ON RESISTANCE 260-40 -20 0 20 40 60 80 100 120 140 160 Ty. JUNCTION TEMPERATURE ( C) Fig. 2 _ Normalized On-Resistance Vs. Temperature Veg. GATE-TO-SOURCE VOLTAGE (VOLTS) FOR TEST CIRCUIT 0 SEE FIGURE 28 0 30 60 90 120 150 @g. TOTAL GATE CHARGE (ne) Fig. 23 Typical Gate Charge Vs. Gate-to-Source VoltageLLE OD i yassus2 GoOd?7l 4 i IRH254 Device Pre-Radiation INTERNATIONAL RECTIFIER T-39-13 DRAIN-TO-SOURCE ON RESISTANCE Ip. DRAIN CURRENT (AMPERES) 4 0. c 2 wo ao ac 0. 0 0 20 40 60 80 100 25 50 75 400 125 4 Ip. DRAIN CURRENT (AMPERES) Tg, CASE TEMPERATURE ( 9) Fig. 24 Typical On-Resistance Vs. Drain Current Fig. 25 Maximum Drain Current Vs. Case Temperature Vos VARY 'p TO OBTAIN REQUIRED PEAK I 'p 1500 PEAK I, = 49A Von = SOV 1200 Fig. 26a Avalanche Inductive Test Circuit 900 Eqag. SINGLE PULSE AVALANCHE ENERGY (mJ) 600 8Vpss Vos nay 300 { : N/ Yoo , \ 7 oN 0 / \ 25 50 75 100 425 150 _ TTT STARTING Ty, JUNCTION TEMPERATURE ( C) Fig. 26b Avalanche Inductive Load Test Waveforms Fig. 26 Typical Avalanche Vs. Starting Junction Temperature G-748L1E D BI usssuse 0009772 & i Pre-Radiation ryTERNATIONAL RECTIFIER IRH254 Device T-39-13 Ro Vos + bUT Yoo Rg ~ GATE | | VOLTAGE Ves = 10V PULSE WIDTH < 1 ps ware DUTY FACTOR <0,1% Fig. 28a Basic Gate Charge Waveform Fig. 27a Switching Time Test Circuit Ves Vos ! I _u. 1s taoff) Fig, 27b Switching Time Waveforms lg = lb CURRENT ~ CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 28b Gate Charge Test Circuit TD) DRIVER GATE DAIVE PW. PERIOD ~ PERIOD PW a 7 CIRCUIT LAYOUT CONSIDERATIONS . ae * LOW STRAY INDUCTANCE Yj ij Yes = 1 * GROUND PLANE o- Li $4 iL AA * LOW LEAKAGE INDUCTANCE CURRENT TRANSFORMER rod oc) OUT @ @} DUT Isp WAVEFORM o- < BODY DIODE FORWARD REVERSE RECOVERY 7 | CURRENT @ CURRENT dite | > 3 @ | DUT Vpg WAVEFORM | 3 It | | DIQDE RECOVERY dvidt WN o- ? RE-APPLIED Ee iH Lek VOLTAGE @ | INDUCTOR CURRENT @ cn) DRIVER =a RIPPLE < 5% Isp WW _ Fig. 29 Peak Commutating dv/dt Test Circuit FORWARD OROP dvdt CONTROLLED BY Rg * DRIVER SAME DEVICE GROUP AS DUT * isp CONTROLLED BY DUTY FACTOR. "D" Q- G-749 Yop