SCHOTTKY DIE SPECIFICATION TYPE: SMBR1060
60 V 10 A ( Super Low Ir) Single Anode
SYM Die Sort UNIT
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 63 Volt
Ir=0.5mA (for dice form) IFAV Amp
VF MAX 0.65 Volt
0.75
IR MAX 0.09 mA
Cj MAX pF
IFSM Amp
Tj °C
TSTG °C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DIM um
2
Mil
2
A2590 101.97
B2490 98.0
C2510 98.8
D254 10
305 12
Operating Junction Temperature
Storage Temperatures
ITEM
Die Size
DICE OUTLINE DRAWING
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
VR= 60 Volt, Ta=25°C
ELECTRICAL CHARACTERISTICS
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
General Description:
200
-65 to +125
-65 to +125
0.66
0.76
@10 Amperes, Ta=25°C
@16 Amperes, 25°C
Maximum Instantaneous Reverse Voltage
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
Thickness (Max)
0.1
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Micro-Electro-Magnetical Tech Co.
Spec. Limit
60
10
B
C
A
Top-side Metal
DSiO2 Passivation
P+ Guard Ring
Back-side Metal
