2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ360 High Speed, High current Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain-source ON resistance : RDS (ON) = 0.55 (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.) z Low leakage current z Enhancement mode : IDSS = -100 A (max) (VDS = -60 V) : Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Drain-gate voltage (RGS = 20 k ) VDGR -60 V Gate-source voltage VGSS 20 V (Note 1) ID -1 A Pulse (Note 1) IDP -4 A PD 0.5 W JEDEC JEITA Drain current DC Drain power dissipation Drain power dissipation PD 1.5 W Channel temperature (Note 2) Tch 150 C Storage temperature range Tstg -55 to 150 C Symbol Max Unit Rth (ch-a) 250 C / W TOSHIBA SC-62 2-5K1B Weight: 0.05 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: Mounted on a ceramic substrate (25.4 mm x 25.4 mm x 0.8 mm) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SJ360 Marking Z Part No. (or abbreviation code) Note 4: A line to the right of a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 8 Lot No. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 16 V, VDS = 0 V 10 A Drain cut-off current IDSS VDS = -60 V, VGS = 0 V -100 A V (BR) DSS ID = -10 mA, VGS = 0 V -60 V Vth VDS = -10 V, ID = -1 mA -0.8 -2.0 V VGS = -4 V, ID = -0.5 A 0.86 1.2 VGS = -10 V, ID = -0.5 A 0.55 0.73 VDS = -10 V, ID = -0.5 A 0.5 1.0 155 22 75 17 20 Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = -10 V, VGS = 0 V, f = 1 MHz tr VGS Switching time Fall time Turn-off time -10V ton tf toff Total gate charge (Gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain ("miller") charge Qgd RL = 60 50 Turn-on time ID = -0.5A VOUT 0V VDD -30V Duty 1%, tw = 10s VDD -48 V, VGS = -10 V, ID = -1 A S pF ns 20 100 6.5 4.5 2.0 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR -1 A Pulse drain reverse current (Note 1) IDRP -4 A Forward voltage (diode) VDSF IDR = -1 A, VGS = 0 V 1.8 V Reverse recovery time trr 50 ns Reverse recovery charge Qrr IDR = -1 A, VGS = 0 V dIDR / dt = 50 A / s 45 nC 2 2009-09-29 2SJ360 ID - VDS -4 -10 -4.5 -5 -8 -1.6 (A) -3 Drain current ID Drain current -0.6 -0.4 -0.2 -3.8 -10 -3.5 -6 (A) -0.8 Common source Ta = 25C Pulse test ID - VDS -2.0 ID -1.0 -5 -6 -8 Common source Ta = 25C Pulse test -4 -3.5 -1.2 -3.3 -0.8 -3 -2.8 -0.4 VGS = -2.5 V VGS = -2.5 V 0 0 -0.2 -0.4 -0.6 Drain-source voltage -0.8 VDS 0 0 -1.0 (V) -2 -4 Drain-source voltage ID - VGS (V) 25 Tc = -55C 100 -1.2 -0.8 -0.4 -1 -2 -3 Gate-source voltage -4 VGS -1.6 -1.2 ID = -2 A -0.8 -1.5 -1.0 -0.4 0 0 -5 (V) -0.5 -4 -8 -16 VGS -20 (V) RDS (ON) - ID 10 Common source VDS = -10 V Pulse test 3 Tc = -55C 25 100 1 0.5 0.3 -0.1 -12 Gate-source voltage Drain-source ON resistance RDS (ON) () Forward transfer admittance Yfs (S) 5 (V) Common source Ta = 25C Pulse test |Yfs| - ID 10 -10 VDS - VGS Common source VDS = -10 V Pulse test 0 0 VDS -2.0 Drain-source voltage Drain current ID (A) -1.6 -8 VDS -2.0 -6 5 Common source Ta = 25C Pulse test 3 VGS = -4 V 1 -10 0.5 -0.3 -0.5 -1 -3 -5 0.3 -0.1 -10 Drain current ID (A) -0.3 -0.5 -1 -3 -5 -10 Drain current ID (A) 3 2009-09-29 2SJ360 RDS (ON) - Ta IDR - VDS -3 ID = -2 A Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) ( ) Common source 2.0 Pulse test -1.5 1.6 -1.0 1.2 -0.5 ID = -2 A VGS = -4 V -1.5 0.8 -1.0 -0.5 0.4 -1 -0.5 Common source Ta = 25C Pulse test -10 -5 -0.3 -3 -0.1 -0.05 -0.03 -1 0 VGS = -10 V 0 -80 -40 VGS = 1 V 0 40 80 120 -0.01 0 160 0.1 0.3 0.2 Ambient temperature Ta (C) Drain-source voltage 0.8 (V) Common source VDS = -10 V ID = -1mA Pulse test -4 300 Gate threshold voltage Vth (V) (pF) VDS 0.7 -5 500 Capacitance C 0.6 0.5 Vth - Ta Capacitance - VDS 1000 Ciss 100 50 30 0.4 Coss Common source VGS = 0 V f = 1 MHz Ta = 25C 10 -0.1 -0.3 -3 -2 -1 Crss -1 -3 -10 Drain-source voltage -30 0 -80 -100 -40 0 40 80 120 160 Ambient temperature Ta (C) VDS (V) PD - Ta 2.0 Drain power dissipation PD (W) 25.4mmx25.4mmx0.8mm 1.5 Mounted on ceramic substrate Single 1.0 0.5 0 0 40 80 120 160 200 Ambient temperature Ta (C) 4 2009-09-29 2SJ360 rth - tw 500 Transient thermal impedance rth (ch-a) 300 Single pulse Single 15 x 15 x 0.8 100 50 20 x 30 x 0.8 30 Mounted on ceramic substrate 40mmx50mmx0.8mm 10 5 3 1 1m 10 m 100 m 1 Pulse width 10 tw 100 1000 (s) SAFE OPERATING AREA -10 -5 ID max (pulsed) * 1 ms * (A) -1 Drain current ID -3 -0.5 -0.3 ID max (continuous) 10 ms * DC operation Ta = 25C -0.1 -0.05 -0.03 *: Single nonrepetitive pulse Tc = 25C Curves must be derated -0.01 linearly with increase in temperature. -0.005 -0.1 -1 -0.3 -3 Drain-source voltage VDSS max -10 -30 -100 VDS (V) 5 2009-09-29 2SJ360 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29