2SJ360
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ360
High Speed, High current Switching Applications
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 0.55 Ω (typ.)
z High forward transfer admittance : |Yfs| = 0.9 S (typ.)
z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage VDSS −60 V
Drain−gate voltage (RGS = 20 k Ω) VDGR −60 V
Gate−source voltage VGSS ±20 V
DC (Note 1) ID −1 A
Drain current
Pulse (Note 1) IDP −4 A
Drain power dissipation PD 0.5 W
Drain power dissipation (Note 2) PD 1.5 W
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to
ambient Rth (ch−a) 250 °C / W
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC ⎯
JEITA SC-62
TOSHIBA 2−5K1B
Weight: 0.05 g (typ.)
2SJ360
2009-09-29
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Marking
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA
Drain cut−off current IDSS V
DS = −60 V, VGS = 0 V ⎯ ⎯ −100 μA
Drain−source breakdown
voltage V (BR) DSS I
D = −10 mA, VGS = 0 V −60 ⎯ ⎯ V
Gate threshold voltage Vth V
DS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V
VGS = −4 V, ID = −0.5 A ⎯ 0.86 1.2
Drain−source ON resistance RDS (ON)
VGS = −10 V, ID = −0.5 A ⎯ 0.55 0.73
Ω
Forward transfer admittance |Yfs| VDS = −10 V, ID = −0.5 A 0.5 1.0 ⎯ S
Input capacitance Ciss ⎯ 155 ⎯
Reverse transfer capacitance Crss ⎯ 22 ⎯
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
⎯ 75 ⎯
pF
Rise time tr ⎯ 17 ⎯
Turn−on time ton ⎯ 20 ⎯
Fall time tf ⎯ 20 ⎯
Switching time
Turn−off time toff
V
GS
0V
−
10V
I
D
=
−0.5A
V
DD
≒
−30V
R
L
=
60
Ω
50Ω
V
OUT
Duty ≦1%, t
w
=
10
μ
s
⎯ 100 ⎯
ns
Total gate charge (Gate−source
plus gate−drain) Qg ⎯ 6.5 ⎯
Gate−source charge Qgs ⎯ 4.5 ⎯
Gate−drain (“miller”) charge Qgd
VDD ≈ −48 V, VGS = −10 V,
ID = −1 A
⎯ 2.0 ⎯
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR ⎯ ⎯ ⎯ −1 A
Pulse drain reverse current
(Note 1)
IDRP ⎯ ⎯ ⎯ −4 A
Forward voltage (diode) VDSF I
DR = −1 A, VGS = 0 V ⎯ ⎯ 1.8 V
Reverse recovery time trr ⎯ 50 ⎯ ns
Reverse recovery charge Qrr
IDR = −1 A, VGS = 0 V
dIDR / dt = 50 A / μs ⎯ 45 ⎯ nC
Note 4: A line to the right of a Lot No. identifies the indication of
product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Z 8
Part No.
(or abbreviation code)
Lot No.
Note 4
≤
≈
2SJ360
2009-09-29
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−16 −20−4 −5
−8 −10−0.8 −1.0
25
−0.1 −0.3 −0.5 −1−3 −5 −10
0.3
3
1
0.5
10
5
VGS
=
−
4 V
−10
0.3
3
1
0.5
Tc = −55°C
100
10
5
−0.1 −0.3 −0.5 −1−3 −5 −10
0−4−8−12
ID = −2 A
−1.5
−1.0
0
−0.4
−0.8
−1.2
−1.6
−2.0
−0.5
0 −1 −2 −3
100
Tc = −55°C
25
0
−0.4
−0.8
−1.2
−1.6
−2.0
0
VGS = −2.5 V
0−2−4−6
−0.4
−0.8
−1.2
−1.6
−2.0
−8
−10
−
6
−
4
−3.8
−
3.5
−3.3
−3
−2.8
−5
0 −0.2 −0.4 −0.6
0
VGS = −2.5 V
−10
−0.2
−0.4
−0.6
−0.8
−1.0
−8
−6
−5
−4.5 −3.5
−4
−3
ID – VDS
ID – VDS
ID – VGS
VDS – VGS
|Yfs| – ID
RDS (ON) – ID
Common source
VDS = −10 V
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VDS = −10 V
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Forward transfer admittance
⎪Yfs⎪ (S)
Drain-source voltage VDS (V)
Drain current ID (A)
Drain-source voltage VDS (V)
Drain current ID (A)
Gate-source voltage VGS (V)
Drain current ID (A)
Gate-source voltage VGS (V)
Drain current ID (A) Drain current ID (A)
Drain-source ON resistance
RDS (ON) (Ω)
Drain-source voltage VDS (V)
2SJ360
2009-09-29
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①
②
0
0 40 80 120 200
0.5
1.0
1.5
2.0
160
0
−1
−2
−3
−5
−80 −40 0 40 80 120 160
−4
−0.1 −1 −10 −100
10
100
1000
−0.3 −3−30
30
50
300
500
Ciss
Coss
Crss
0 0.1 0.2 0.4 0.5 0.7 0.8
−0.01
−1
−0.1
−0.03
−0.05
−0.3
−0.5
VGS = 1 V
−
3
−1
−10
0
−
5
−3
0.3 0.6
1.2
0
−80 −40 120 160 40
0.4
0.8
2.0
1.6
0 80
ID = −2 A
−1.5
−1.0
−0.5
ID = −2 A
−1.5
−1.0
−0.5
VGS = −10 V
VGS = −4 V
Vth − Ta
RDS (ON) − Ta
IDR − VDS
Common source
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VDS = −10 V
ID = −1mA
Pulse test
PD − Ta
① 25.4mm×25.4mm×0.8mm
Mounted on ceramic substrate
② Single
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ambient temperature Ta (°C)
Gate threshold voltage
Vth (V)
Ambient temperature Ta (°C)
Capacitance C (pF)
Capacitance – VDS
Drain-source voltage VDS (V)
Drain-source ON resistance
RDS (ON) ( Ω)
Ambient temperature Ta (°C)
Drain reverse current IDR (A)
Drain-source voltage VDS (V)
Drain power dissipation
PD (W)
2SJ360
2009-09-29
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−0.005
−0.1
−0.01
−1
−10
−1 −10 −100
−0.1
1 ms *
VDSS max
10 ms *
−0.3 −3 −30
−0.05
−5
−0.5
−0.03
−3
−0.3
3
10 1
5
100 1000
300
500
30
100
1 m 10 m 100 m
20
×
30 × 0.8
1
15 × 15 × 0.8
10
50
rth − tw
Single pulse Single
Mounted on ceramic substrate
40mm×50mm×0.8mm
*: Single nonrepetitive pulse
Tc = 2 5 ° C
Curves must be derated
linearly with increase in
temperature.
ID max (pulsed) *
ID max (continuous)
DC operation
Ta = 25°C
SAFE OPERATING AREA
Drain-source voltage VDS (V)
Pulse width tw (s)
Transient thermal impedance
rth (ch-a)
Drain current ID (A)
2SJ360
2009-09-29
6
RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
