FAIRCHILD SEMICONDUCTOR ay DE seHe74 OD27478 8 i 3469674 FAIRCHILD SEMICONDUCTOR 84D 27478 D FAIRCHILD 1N658/FDLL658 General Purpose Diodes j A Schlumberger Company T-0| -0% ce nn tm BV...120 V (MIN) @ 100 uA PACKAGES I e Ve... 1.0 V (MAX) @ 100 mA 1N658 DO-35 FDLL658 LL-34 ABSOLUTE MAXIMUM RATINGS (Note 1) ; I | Temperatures if you need this device in the . Storage Temperature Range ~65C to +200C SOT package, an electical Maximum Operating Junction Temperature +175C ivalent is available. See Lead Temperature +200C equ FDSO1400 family. Power Dissipation (Note 2) Maximum Total Dissipation at 25C Ambient - 500 mW Linear Derating Factor (from 25C) 3.33 mW/C Maximum Voltage and Currents WIV Working inverse Voltage 100 V lo Average Rectified Current 200 mA IF Forward Current Steady State 500 mA if(surge) Peak Forward Surge Current . Pulse Width = 1.0s 1.0A Pulse Width = 1.0us 4.0A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS VE Forward Voltage 1.0 Vv lz = 100 mA IR Reverse Current 60 nA V, = 50V 25 HA | VR = 50V, Ta = 150C BY Breakdown Voltage 120 Vv IR = 100 vA trr Reverse Recovery Time 300 ns VR = 40 V, if = 5.0 mA, Ry = 2.0k2, Cy = 10 pF, Recovery to 80 kQ NOTES: 1. The maximum ratings are limiting values above which life or satisfactory performance may be Impaired. 2. These are steady atata limita. The factory should be consulted on applicalions involving pulsed or low duty cycle operations. &. For product family characteriatic curves, reler to Chapter 4, D1,FAIRCHILD SEMICONDUCTOR ay DEB sede74 00274749 oO i 3469674 FAIRCHILD SEMICONDUCTOR 84D 27479 Da 1N659/660/661 FDLL659/660/661 General Purpose Diodes T-O10% EAE FAIRCHILD A Schlumberger Company Ve... 1,0 V (MAX) @ 6.0 mA PACKAGES trp. ..300 ne (MAX) 1N659 DO-35 . . 1N660 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) 4N661 DO-35 Temperatures FDLL659 LL-34 Storage Temperature Range 65C to +200C FDLL660 LL-34 Maximum Operating Junction Temperature +175C FDLL661 LL-34 Lead Temperature +260C : Power Dissipation (Notes 2) lf you need this device in the : Maximum Total Dissipation at 25C Ambient 500 mW SOT package, an electical Linear Derating Factor (from 25C) . 3.33 mW/C equivalent is available. See FDSO1200 family. Maximum Voltage and Currents 1N659 1N660 1N661 WIV Working Inverse Voltage 50 V 100 V 200 V lo Average Rectified Current 200mA 200mA 200mA IF Forward Current Steady State 6500 mA 500 mA 500 mA if(surge) Peak Forward Surge Current Pulse Width = 1.0s TOA 10OA 1.0A Pulse Width = 1.0 ps 4.0A 4.0A 4.0A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) iN659 IN66O iN661 SYMBOL; CHARACTERISTIC UNITS | TEST CONDITIONS MIN. | MAX | MIN | MAX | MIN | MAX VE Forward Voltage 1.0 1.0 1.0 Vv | ip=6.0mA IR Reverse Current 5.0 kA | VR =50V 5.0 HA | VR = 100V 10 | vA | VR =200V 25 : vA | VR = 50V, Ta = 100C | 50 HA | Vp = 100 V, Ta = 100C 100 HA | VR = 200V, Ta = 100C BY Breakdown Voltage 60 120 240 Vv IR = 100 pA ter Reverse Recovery Time 300 300 300 os V, = 36 V, tf = 30 mA, RL = 2.0 kQ, C. = 10 pF, Recovery to 400 kQ NOTES: 1. The maximum ratings are limiting values above which life or satisfacfory performance may be impaired. 2. These are ateady atate limifs. The factory should be consulted on applications involving pulsed or tow duty cycle operations. 3. For product family characteristic curves, reter {o Chapter 4, 04 for {N659, 4, O1 for 1N660 and 1N661. SN 3-199 | | I { um KateeFAIRCHILD SEMICONDUCTOR ay ve 34b9b74 0027480 & i 3469674 FAIRCHILD SEMICONDUCTOR 84D 27480 Daa FAIRCHILD 1N746 through 1N759 7! , an 500 mW Silicon Linear Diodes A Schlumberger Company ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGES Temperatures All Devices DO-35 Storage Temperature Range ~65C to +200C Maximum Junction Operating Temperature +175C Lead Temperature +260C Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient 500 mW Linear Power Derating Factor (from 25C) 3.33 mW/C ELECTRICAL CHARACTERISTICS (25C Ambient unless otherwise noted) SYMBOL Zz Vz 'p TC Maximum Zener Nominal Maximum Reverse Typical Characteristic Impedance Zener Voltage Current (Vp = 1.0V) Temperature (Note 4) (Note 3} @25C @150C Coefficient (iz = 20 mA) (lz = 20 mA) of Vz UNIT Q Vv BA uA %/C IN746 28.0 3.3 10.0 30.0 -0.070 IN747 "24.0 3.6 10.0 30.0 0.065 IN748 23.0 3.9 10.0 30.0 0.060 IN749 22.0 4.3 2.0 30.0 0,065 IN750 19.0 47 2.0 30.0 0.043 IN751 17.0 5.1 1.0 20.0 +0.030 IN752 11.0 5.6 1.0 20.0 +0.028 IN753 7.0 6.2 0.1 20.0 +0.045 IN754 5.0 6.8 0.1 20.0 +0.050 IN755 6.0 7.6 0.1 20.0 . +0.058 IN756 8.0 8.2 0.1 20.0 +0.062 IN757 10.0 9.1 0.1 20.0 +0.068 IN758 17.0 10.0 O41 20.0 +0.075 IN759 30.0 12.0 0.1 20.0 +0.077 NOTES: . These ratings are limiting values above which the serviceability of the diode may be impaired. . Thase are steady state limiis, The factory should be consulted 9n applications involving pulsed or low duty-cycle operation. Type numbers without suffix hava + 10% tolerance on nominal Vz. Type numbers with suffix A have + 6% tolerance on nominat Vz. Tha Zener impedance Zz is derived by superimposing a 60 Hz 2 mA (RMS) signal on the 20 mA ly test current. For product family characteristic curves, refer to Chapter 4, D13 ons oeFAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR epee tpannies aig | FAIRCHILD A Schlumberger Company ay DE fsyese74 ooezuaa a ff 84D 27481 D 1N/FDLL914/A/B/916/A/B 1N/FDLL4148/4149/4446 1N/FDLL4447/4448/4449 High Conductance Ultra Fast Switching Diodes r~6 3-079 try. ..4.0 ns (MAX) BV... 100 V (MIN) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Max Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Linear Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage lo Average Rectified Current it DC Forward Current if Recurrent Peak Forward Current i(surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 HS PACKAGES 1N914 DO-35 iN916 DO-35 1N914A DO-35 1N914B DO-35 * 65 to +200C IN916A DO-35 +175C 1N916B DO-35 +260C 1N4148 DO-35 1N4149 DO-385 _ 1N4446 DO-35 Bo 3.38 Wie 1N4447 DO-35 B 1N4448 DO-35 1N4449 DO-35 75V FDLL914 LL-34 200 mA FDLL916 LL-34 soe mA FDLL914A LL-34 FDLL914B LL-34 LOA FDLL916A LL-34 4.04 FDLL9i6B LL-34 FDLL4148 LL-34 FDLL4149 LL-34 FDLL4446 LL-34 FDLL4447 LL-34 FDLL4448 LL-34 FDLL4449 LL-34 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature uniess otherwise noted) If you need this device in the SOT package, an electical equivalent is available. See FDSO1200 family. SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS BV Breakdown Voltage 100 Vv IR = 100 pA 76 v IR = 6.0 pA IR Reverse Current 25 nA VR = 20V 50 uA VR = 20V, Ta = 160C 5.0 BA VR =75V Ve Forward Voltage 1N914B, 1N4448 0.62 0.72 Vv IF = 5.0 mA INS 16B, 1N4449 0.63 0.73 Vv Ir = 5.0mA 1N914, 1N916 } _ 1N4148, 1N4149 10 Vj IF = 10 ma IN914A, INSI6A _ 1N4446, 1N4447 } 10 V | IF = 20 ma 1N916B, 1N4449 1.0 Vv ip = 30 mA 1N914B, 1N4448 1.0 Vv IF = 100 mA tre Reverse Recovery Time 4.0 ns if = 10 mA, V, = 6.0 V, : RL = 100 2 Rec. fo 1.0 mA i NOTES; : 1, Maximum ratings are timiting values above which iife or satisfactory performance may be impaired. : 2. These ere steady atate limits. The factory should be on icatiana involving pulsed or low duty le operation. i 3. For family characteristic curves, refer to Chapter 4, D4. eer 3-201 rene voFAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR 84D 27482 1N/FDLL914/A/B/916/A/B 1N/FDLL4148/4149/4446 1N/FDLL4447/44448/4449 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) 7-03-04 a4 DE Bf suese74 oo27ya2 o Ef - Dem SYMBOL CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS Cc Capacitance 1N914, iN914A 1N914B, 1N4148 4.0 pF VR =0,f = 1 MHz 1N4446, 1N4447 1N916, 1IN916A 1N9 168, 1N4149 2.0 pF VR =0,f = | MHz 1N4448, 1N4449 Vir Peak Forward Recovery 1N914, 1N916 50 mA Peak Square Wave, Voltage 1N914B, 1N916B 2.6 Vv 0.1 ws pulse width, 1N4448, 1N4449 5 kHz - 100 kHz rep. rate RE Rectification Efficiency INS14A, 1N914B 45 % 2.0 Vrms, f = 100 MHz INST6A, 1N916B 3-202 | iFAIRCHILD SEMICONDUCTOR &Y de ff suncu74 O0e7483 i i , 3469674 FAIRCHILD SEMICONDUCTOR 84D 27483 D pee yr 1N957 through 1N973 7" 500 mW Silicon Planar Zener Diodes A Schlumberger Company | ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGES Al i - Temperatures | Devices DO-35 Storage Temperture Range 65C to +200C 2 Maximum Junction Operating Temperature +175C Lead Temperature +260C Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient 500 mW Linear Power Derating Factor (from 25C) 3.383 mW/C ELECTRICAL CHARACTERISTICS (25C Ambient) SYMBOL V2 Zz ler Z2K lox ln Var TC lou Nominal ; Maximum | Test Maximum Test aximum . Test Voltage Typical Maximum Zener Zener | Current | Zener Knee | Current |Reverse Temperature] Zener Characteristics | Voltage Impedance Impedance Current | +20% + 10% +5% | Coefficient | Current (Note 8)| (Note 4) (Note 4) @Var Vz Ve Vz of V> (Note 5) 1 . @lzr @lzr @lzx Tolerance | Tolerance | Tolerance i UNIT Vv a mA Q mA BA Vv v v % 1 C mA IN957 6.8 45 18.5 700 1.0 150 4.4 4.9 .2 +0.050 47 INo58 7.6 .6 16.5 700 0.5 76 4.8 5.4 5.7 +0.058 42 IN959 8.2 6.5 15.0 700 0.5 50 .2 5.9 6.2 +0.062 38 : IN960 9.1 7.6 14.0 700 0.5 25 5.8 6.6 6.9 +0.068 35 : IN961 10.0 8.5 12.5 700 0.25 10 6.4 7.2 7.6 +0.072 32 IN962 11.0 9.6 11.5 700 0.26 5.0 7.0 8.0 8.4 +0.073 28 IN963 12.0 11.5 10.5 700 0.25 .0 7.6 8.6 9.1 +0.076 26 iN964 13.0 13.0 9.6 * 700 0.26 5.0 8.3 9.4 9.9 +0.079 24 : INS65 15.0 16.0 8.5 700 0.25 .0 9.6 10.8 11.4 +0.082 at IN9S66 16.0 17.0 7.8 700 0.25 5.0 10.2 114.6 12,2 +0.083 19 IN967 18.0 21.0 7.0 750 0.25 5.0 11.5 13.0 13.7 +0.085 17 INS68 20.0 25.0 6.2 750 0.25 6.0 12.8 14.4 15.2 +0.086 16 INg6S 22.0 29.0 5.6 750 0.25 5.0 14.0 15.8 16.7 +0.087 14 IN970 24.0 33.0 5.2 750 0.25 5.0 15.4 17.3 18.2 +0.088 13 1N971 27.0 41.0 4.6 750 0.25 5.0 17.2 19.4 20.6 +0.090 11 INg72 30.0 49.0 4.2 1000 0.25 5.0 19,2 21.6 22.8 +0.091 10 IN973 33.0 58.0 3.8 1000 0.25 5.0 211 23.8 26.1 0,092 9.2 NOTES 1 Those ratings are timiting values above which the sarvicegbility of the diade may be impaired 2. These are steady state limits The factory should be consulted on applications involving pulsed or low duty-cycle operation 3. Type numbers without suffix have + 20% tolerance on nominal Vz. Type numbers with suffix A have + 10% tolerance on nommat Vz. Type numbers with suffix B have + 5% tolerance on nominal Vz - a The Zener impedances Zz and Zz, ate dered by superimposing a 6C Hz signal on test currents I77 and Izq, having an RMS value of 10% of the dc. value of Izy and lz, respectively Maximum Zener Curent (Iz,4) is based on (he maximum Zener voliage of a 20% tolerance unt. For product family characteristic curves, refer to Chapter 4. B13 an 3-203 soniFAIRCHILD SEMICONDUCTOR au De Bf syes.74 ooezuay 3 Of. 1 3469674 FAIRCHILD SEMICONDUCTOR 84D 27484 Da 1N3064/4305/4454 7 3-? FDLL3064/4305/4454 Ultra Fast Low Capacitance Diodes FAIRCHILD pe A Schlumberger Company C...2.0 pF @ Va = 0, = 1.0 MHz PACKAGES @ ty. ..4.0 ns @ If = 10 mA, |, = 10 mA, V; = 1.0 V 1N3064 DO-35 * BY. ..76 V (MIN) 1N4305 DO-35 1N4454 DO-35 LUT! ABSOLUTE MAXIMUM RATINGS (Note 1) FDLL3064 LL-34 venorage Temp ture Rang 65C to +200 FULL-4305 LL-34 erature Range = 0 Max Junction Operating Temperature +175C FOLL4454 LL-34 Lead Temperature +260C If you need this device in the Power Dissipation (Note 2) SOT package, an_ electical Maximum Tofal Dissipation at 25C 500 mW equivalent is available. See Linear Derating Factor (from 25C) 3.33 mw/C FDSO1200 family. Maximum Voltages and Currents WIV Working Inverse Voltage 50 V lo Average Rectified Current 100 mA IF Forward Current Steady State 300 mA if Recurrent Peak Forward Current 400 mA i (surge) Peak Forward Surge Gurrent Pulse Width = 1.08 100A Pulse Width = 1,0 us 4.0A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS VE Forward Voltage 0.610 0.710 Vv Ip = 2.0 mA 0.650 | 0.650 Vv lp = 1.0mA 0,505 0.575 Vv IF = 250 pA 1N3064 1N4484 1.0 v Ip = 10 mA 1N4305 0.70 0,85 v IF = 10 mA IR Reverse Current 0.1 HA VR = 50 V 100 BA VR = 50 V, Ta = 150C BV Breakdown Voltage 75 Vv IR = 65.0 pA ter Reverse Recovery Time (Note 3) 1N4305 2.0 ns ly = 10 mA, V; = 6.0 V, Ry = 1002 1N3064 Ie = fy =10 mA, RL = 100 2, 1N4305 4.0 ns 1N4454 Vp=1.0V Cc Capacitance 2.0 pF V_ = 0,f = 1.0 MHz RE Ractification Efficiency (Note 4) 45 % {= 1.0 MHz AVE ;o | Forward Voltage Temperature Coefficient (Note 5) 3.0 mv7 NOTES: The maximum ratings are limiting values abovs which life or satisfactory performance may be impeired. These are steady state fimita. The factory should be consulted on applications involving pulsed or low duly-cycta operation. Recovary to 1.0 mA. Reclitication efficiency is defined aa the ratio of dc load voltage to pesk rf input vollage (o the detector circuit, measured with 2.0 V rms input to the circuit. Load resistance 5.0 0, load capacitance 20 pF This vaiue for AVe/*C is a typical vatue not a minimum or maximum. . For product family characteristic curves, rater to Chapter 4, 04. Sere hermes creme mee_ FAIRCHILD SEMICONDUCTOR By DEBasesn74 ooezuas s Bf. 1 3469674 FAIRCHILD SEMICONDUCTOR 84D 27485 Dt OD 1N3070/4938 FAIRCHILD O a FDLL3070/4938 T-0 3-0 4 A Schlumberger Company High Speed High Conductance Diodes BV...200 V (MIN) PACKAGES Ip... 100 nA (MAX) 1N3070 DO-35 1N4938 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) FDLL3070 LL-34 \ Temperatures FDLL4938 LL-34 | Storage Temperature Range 65C to +200C Max Junction Operating Temperature +176C ; we Lead Temperature 4060C lf you need this device in the i SOT package, an electical Power Dissipation (Note 2) equivalent is available. See : Maximum Total Dissipation at 25C Ambient 500 mW FDSO1400 family. 3 Linear Derating Factor (from 25C) 3.383 mW/C Maximum Voltage and Currents WIV Working Inverse Voltage 175 V lo Average Rectified Current 200 mA IF Forward Current Steady State DC 500 mA if Recurrent Peak Forward Current 600 mA \# (surge) Peak Forward Surge Current i Pulse Width = 1.0s 1OA i Pulse Width = 1.0 us 4.0 A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS IR Reverse Current 100 nA VR = 1768 V 100 BA VR = 175 V, Ta = 150C BV Breakdown Voltage 200 v IR = 100 uA VE Forward Voltage 1.0 V Iz = 100 mA Cc Capacitance 5.0 pF Vp = 0,f = 1.0 MHz ter Reverse Recovery Time (Note 3) 50 ns if = ly = 30 mA, RL = 1008 RE Rectification Efficiency (Note 4) 35 % f = 100 MHz NOTES: 1. The maximum ralings are timiting values above which life or satisfactory performance may be impaired. 2, These are steady atate limits. The factory shoutd be consulted on applications involving pulsed or low duty-cycle operation. 3. Recovery to 1.0 mA. 4. Rectification efficiency is detinad a the ratio of de load voltaga to peak rf input voltage tothe detector circuit, measured with 2.0 V rms input fo the circuit. Load resistance: 5.0 kQ, toad capacitance 20 pF. 1N3070 and {N4936 are electrically and mechanically identical. . For product family characterislic curves, refer to Chapter 4, Ot. ee nen A 3-205FAIRCHILD SEMICONDUCTOR 84 DE fj 345674 qo274ab ? ay 3469674 FAIRCHILD SEMICONDUCTOR 84D 27486 Dum Pe | 2 of- 1N3595/6099 7? f- 07 FAIRCHILD a . FDLL3595/6099 A Schlumberger Compan High Conductance Low Leakage Diodes BV... .150-V. (MIN) @ 100 nA PACKAGES * Vp...1.,0 V @ 200 mA 4N3595 DO-35 : 1N6099 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) FDLL3595 LL-34 FDLL6099 LL-34 | Temperatures Storage Temperature Range 65C to +200C Max Junction Operating Temperature +175C e Lead Temperature +260C If you need this device in the | Power Dissipation (Note 2) SOT package, an electical Maximum Total Dissipation at 25C Ambient 500 mW equivalent is available. See | Linear Derating Factor (From 25C) 3.33 mW/C FDSO1500 family. Maximum Voltage and Currents wiv Working Inverse Voltage 125V lo Average Rectified Current 200 mA le Forward Current Steady State 500 mA if Peak Repetitive Forward Current 600 mA if (surge) Peak Forward Surge Current Pulse Width = 1.08 1.0A Pulse Width = 1.0 us 4.0A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) i SYMBOL CHARACTERISTIC MIN MAX UNITS TEST GONDITIONS I VE Forward Voltage 0.83 1.0 Vv Ip = 200 mA I 0.79 0,92 v Ip = 100 mA | 0.75 0.88 V Ip = 50 mA ' 0.65 0.80 V Ip = 10 mA 0.60 0,75 v Ip = 5.0mA ; 0.52 0.68 v Ip = 1.0 mA Iq Reverse Current 1.0 nA VR = 125 V : 300 nA VR = 30 V, Ta = 125C ! 00 nA VR = 125 V, Ta = 125C i 3.0 BA Va = 125 V, Ta = 150C i = ! ter Reverse Recovery Time 3.0 BS Ip = 10 mA, Vp = 3.5 V, RL = 1.0k2 i c Capacitance 8.0 pF VR = 0, f = 1.0 MHz : BY Breakdown Voltage 150 Vv IR = 100 vA NOTES: 1, The maximum ratings are limiting values above which life or satisfactory performance may be impaired. 2. These are ateady state limits. The factory should be consulted on applications involving pulsed or low duly-cycla operation. 3. 1N3595 and IN8099 are elactrically and mechanically identical. 4. For product family characteristic curves..reter to Chapter 4, 02. Ce3449674 OOe7487 4 i - LE FAIRCHILD a ae raniaeeae A Schlumberger Company 1N3600/FDLL3600 7-2 3~07 1N4150/FDLL4150 1N4450/FDLL4450 High Conductance Ultra Fast | Diodes trr...4.0 ns (MAX) PACKAGES Vp... .1.0 V (MAX) @ 200 mA 4N3600 DO-35 1N4150 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) 1N4450 DO-35 Temperatures FDLL3600 LL-34 Storage Temperature Range 65C to +200C FDLL4150 LL-34 Max Junction Operating Temperature +175C FDLL4450 LL-34 Lead Temperature +260C Power Dissipation (Note 2) Max Total Power Dissipation at 26C Ambient Linear Derating Factor (from 25C) Maximum Voltages and Currents 1N3600 WIV Working Inverse Voitage 50V lo Average Rectifled Current 200 mA IF DC Forward Current 400 mA if Recurrent Peak Forward Current 600 mA it(surge) Peak Forward Surge Current Pulse Width = 1.0 s 1.0A Pulse Width = 1.0 us 4.0A if you need this device in the soo mw SOT package, an electical 3.33 mW/C equivalent is available. See e FDS0Oi200 family. 1N4150 1N4450 50 V 30 V 200 mA 200 mA 400 mA 400 mA 600 mA 600 mA 1.0A 1.0A 4.0A 4.0A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) iN3600 1N4150 1N4450 t SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS MIN MAX MIN MAX BY Breakdown Voltage 756 Vv IR = 5.0 uA 40 v in = 5.0uA IR Reverse Current 100 nA VR = 50V 50 nA | VR =30V 100 uA VR = 50V, Ta = 160C 50 BA VR = 30 V, Ta = 180C VE Forward Voltage 0.42 0.54 Vv IF = 0.1 mA 0.64 0.62 0.52 0.64 Vv Ip = 1.0mA 0.66 0.74 0.64 0.76 Vv IF = 10 mA 0.76 | 0.86 Vv ip = 50 mA 0.82 0.92 0.80 0.92 v IF = 100 mA 0.87 1.0 1.0 v ip = 200 mA c Capacitance 2.6 4.0 pF VR = 0, f = 1.0 MHz trr Reverse Recovery Time 4.0 ns lt = |, = 10 mA fo 200 mA, (Note 3) RL = 1002 4.0 ns iy = Ip = 10 mA, Ry = 100 2 6.0 ns I; = fp = 200 mA to 400 mA, Rr = 100 tte Forward Recovery Time 10 ns if = 200 mA, ty = 0.4 ns, Vip = 1.0 V NOTES: 4. Maximum ratings are limiting values above which hfe or satisfactory performance may be impaired. 2. These are steady state limits. The factory shauld be consulted on applications invetving pulsed or low duty-cycle operation. 3. Recovery to 0.1 |. 4. For family characteristic curves, refer to Chapter 4, D4. a 3-207