MITSUBISHI FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ID(rms) .......................................................... 100A VDSS ............................................................. 100V Insulated Type 6-elements in a pack Thermistor inside UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION AC motor control of forklift (battery power source), UPS OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 110 97 0.25 70.9 32 6.5 16 16 36 36 10 35 1.0 10 30 6.5 V (SCREWING DEPTH) B 25 4 P U 90 14 20 32 CIRCUIT DIAGRAM (8)GVP (2)SVP 80 14 20 32 A (7)GUP (1)SUP 75 W 14 20 16.5 4 22.57 U 14 7-M6NUTS 3.96 9.2 5-6.5 38 6 (6) 12 3 (8.7) 67 0.25 9.1 13 1 14 4-6.5 MOUNTINGHOLES 11.5 (6) P (15.8) 3 6.5 7 (14.5) (14.5) (6) 7 N (17.5) 7 22.75 26 1.0 -0.5 30 L A B E L 15.2 16.5 Tc measured point Housing Type of A and B (Tyco Electronics P/N:) A: 917353-1 B: 179838-1 (9)GWP (3)SWP V W (10)GUN (11)GVN (12)GWN (4)SUN N (5)SVN (6)SWN (13) (14) (1)SUP (2)SVP (3)SWP (7)GUP (8)GVP (9)GWP (10)GUN (11)GVN (12)GWN (13)TH1 (14)TH2 (4)SUN (5)SVN (6)SWN A B May 2006 MITSUBISHI FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE ABSOLUTE MAXIMUM RATINGS (Tch = 25C unless otherwise specified.) Symbol VDSS VGSS ID IDM IDA IS*1 ISM*1 PD*4 PD*4 Tch Tstg Viso Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage -- Mounting torque -- Weight Ratings 100 20 100 200 100 100 200 410 560 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 Conditions G-S Short D-S Short TC' = 137C*3 Pulse*2 L = 10H Pulse*2 Pulse*2 TC = 25C TC' = 25C*3 Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting M6 Typical value Unit V V A A A A A W W C C V N*m N*m g ELECTRICAL CHARACTERISTICS (Tch = 25C unless otherwise specified.) Symbol Item IDSS VGS(th) IGSS rDS(ON) (chip) VDS(ON) (chip) Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage R(lead) Lead resistance Ciss Coss Crss QG td(on) tr td(off) tf trr*1 Qrr*1 VSD*1 Rth(ch-c) Rth(ch-c') Rth(c-f) Rth(c'-f') Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance Conditions VDS = VDSS, VGS = 0V ID = 10mA, VDS = 10V VGS = VGSS, VDS = 0V ID = 100A VGS = 15V ID = 100A VGS = 15V ID = 100A terminal-chip Tch = 25C Tch = 125C Tch = 25C Tch = 125C Tch = 25C Tch = 125C VDS = 10V VGS = 0V VDD = 48V, ID = 100A, VGS = 15V VDD = 48V, ID = 100A, VGS1 = VGS2 = 15V RG = 13, Inductive load switching operation IS = 100A IS = 100A, VGS = 0V MOSFET part (1/6 module)*7 MOSFET part (1/6 module)*3 Case to fin, Thermal grease Applied*8 (1/6 module) Case to fin, Thermal grease Applied*3, *8 (1/6 module) Min. -- 4.7 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.4 4.1 0.24 0.41 1.2 1.68 -- -- -- 760 -- -- -- -- -- 3.6 -- -- -- 0.1 0.09 Max. 1 7.3 1.5 3.3 -- 0.33 -- -- -- 50 7 4 -- 400 300 450 300 250 -- 1.3 0.30 0.22 -- -- Min. -- -- Limits Typ. 100 4000 Max. -- -- Unit mA V A m V m nF nC ns ns C V C/W THERMISTOR PART Symbol RTH*6 B*6 Parameter Resistance B Constant Conditions 25C*5 TTH = Resistance at TTH = 25C, 50C*5 Unit k K *1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. *3: TC' measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5: TTH is thermistor temperature. *6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K) *7: TC measured point is shown in page OUTLINE DRAWING. *8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd "G-746". May 2006 MITSUBISHI FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) Chip OUTPUT CHARACTERISTICS (TYPICAL) Chip 200 VGS = 20V 12V 15V 160 VDS = 10V 10V 120 9V 80 40 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 200 150 Tch = 25C Tch = 125C 100 50 Tch = 25C 0 0 0.2 0.4 0.6 0.8 0 1.0 5 ID = 100A 5 VGS = 12V 4 VGS = 15V 3 2 1 40 60 80 100 120 140 160 GATE THRESHOLD VOLTAGE VGS(th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS(ON) (m) 6 20 13 15 7 6 5 VDS = 10V ID = 10mA 4 3 2 1 0 0 20 40 60 80 100 120 140 160 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS (TYPICAL) Chip 102 2.0 Tch = 25C CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 1.6 1.2 0.8 ID = 200A 0.4 0 ID = 100A 4 8 3 2 Ciss 101 7 5 3 2 VGS = 0V ID = 50A 0 CAPACITANCE (nF) DRAIN-SOURCE ON-STATE VOLTAGE VDS(ON) (V) 11 GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE VOLTAGE VS. TEMPERATURE (TYPICAL) Chip 0 9 GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE VOLTAGE VDS (V) 0 7 12 16 GATE-SOURCE VOLTAGE VGS (V) 20 100 -1 10 2 3 5 7 100 Coss Crss 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) May 2006 MITSUBISHI FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE GATE CHARGE CHARACTERISTICS (TYPICAL) 16 VDD = 24V VDD = 48V 12 8 4 0 103 ID = 100A 0 103 200 400 600 800 SOURCE CURRENT IS (A) GATE-SOURCE VOLTAGE VGS (V) 20 102 7 5 3 2 0.6 0.7 0.8 0.9 1.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 102 tf 7 5 Conditions: VDD = 48V VGS = 15V RG = 13 Tch = 125C Inductive load 3 2 3 5 7 102 2 3 SWITCHING TIME (ns) td(on) tr 2 td(off) 3 2 td(on) 103 tr 7 5 3 2 tf Conditions: VDD = 48V VGS = 15V ID = 100A Tch = 125C Inductive load 102 7 5 3 2 101 5 7 103 0 20 40 60 80 100 120 140 DRAIN CURRENT ID (A) GATE RESISTANCE RG () HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 7 5 3 2 100 7 5 Esw(off) Esw(on) 3 2 Err 10-1 7 5 3 2 2 3 5 7 102 Conditions: VDD = 48V VGS = 15V RG = 13 Tch = 125C Inductive load 2 3 DRAIN CURRENT ID (A) 5 7 103 101 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) Tch = 25C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 2 SWITCHING LOSS (mJ/pulse) Tch = 125C 2 SOURCE-DRAIN VOLTAGE VSD (V) 3 10-2 1 10 3 GATE CHARGE QG (nC) td(off) 101 VGS = 0V 7 5 101 0.5 1000 1200 7 5 101 1 10 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) Chip 7 5 Esw(on) 3 2 Esw(off) 100 7 5 Conditions: VDD = 48V VGS = 15V ID = 100A Tch = 125C Inductive load 3 2 10-1 Err 7 5 3 2 10-2 0 20 40 60 80 100 120 140 GATE RESISTANCE RG () May 2006 MITSUBISHI FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Irr (A), trr (ns) 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(ch-c) 7 5 trr 102 7 5 Irr 3 2 Conditions: VDD = 48V VGS = 15V RG = 13 Tch = 25C Inductive load 101 7 5 3 2 100 1 10 2 5 7 102 3 2 3 7 5 3 2 10-1 10-1 7 5 7 5 3 2 3 2 10-2 10-2 7 5 3 Single pulse 2 Tch = 25C Per unit base = Rth(ch-c) = 0.30C/W 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 10-3 5 7 103 7 5 3 2 TIME (s) SOURCE CURRENT IS (A) CHIP LAYOUT (110) (97) 90.6 57.6 24.6 P 48.4 29.6 N 7 1 TrUP 13 TrVP TrWP TrVN TrUN 12 (90) (80) (67) 14 TrWN LABEL SIDE 6 U V W 25.6 58.6 91.6 May 2006