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D-

PMPB11EN

30 V N-channel Trench MOSFET

14 January 2014 Product data sheet

Scan or click this QR code to view the latest information for this product

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

2. Features and benefits

•Trench MOSFET technology

•Very fast switching

•Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

•Exposed drain pad for excellent thermal conduction

•Tin-plated 100 % solderable side pads for optical solder inspection

3. Applications

•Charging switch for portable devices

•DC-to-DC converters

•Power management in battery-driven portables

•Hard disk and computing power management

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - 30 V

VGS gate-source voltage

Tj = 25 °C

-20 - 20 V

IDdrain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - - 13 A

Static characteristics

RDSon drain-source on-state

resistance

VGS = 10 V; ID = 9 A; Tj = 25 °C - 12 14.5 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 2 / 15

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 D drain

2 D drain

3 G gate

4 S source

5 D drain

6 D drain

7 D drain

8 S source

Transparent top view

DFN2020MD-6 (SOT1220)

017aaa253

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMPB11EN DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline

package; no leads; 6 terminals

SOT1220

7. Marking

Table 4. Marking codes

Type number Marking code

PMPB11EN 1C

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 3 / 15

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 30 V

VGS gate-source voltage

Tj = 25 °C

-20 20 V

VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 13 A

VGS = 10 V; Tamb = 25 °C [1] - 9 A

IDdrain current

VGS = 10 V; Tamb = 100 °C [1] - 5.7 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 34 A

Tamb = 25 °C [1] - 1.7 W

Tamb = 25 °C; t ≤ 5 s [1] - 3.5 W

Ptot total power dissipation

Tsp = 25 °C - 12.5 W

Tjjunction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

ISsource current Tamb = 25 °C [1] - 2.2 A

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

Tj(°C)

- 75 17512525 75- 25

017aaa123

120

Pder

(%)

Fig. 1. Normalized total power dissipation as a

function of junction temperature

Tj(°C)

- 75 17512525 75- 25

017aaa124

120

Ider

(%)

Fig. 2. Normalized continuous drain current as a

function of junction temperature

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 4 / 15

017aaa553

10-1

102

(A)

10-2

VDS (V)

10-1 102

101

Limit RDSon = VDS/IDtp = 10 µs

tp = 100 µs

tp = 1 ms

tp = 10 ms

DC; Tsp = 25 °C tp = 100 ms

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1] - 235 270 K/W

[2] - 67 74 K/W

Rth(j-a) thermal resistance

from junction to

ambient

in free air

[3] - 33 36 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

- 5 10 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 5 / 15

017aaa542

tp (s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33 0.25

0.2

0.1

0.05

0.02

0.01 0

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa543

tp (s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33 0.25

0.2 0.1

0.05

0.02

0.01

FR4 PCB, mounting pad for drain 6 cm2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V

VGSth gate-source threshold

voltage

ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2 V

VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current

VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 20 µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA

VGS = 10 V; ID = 9 A; Tj = 25 °C - 12 14.5 mΩ

VGS = 10 V; ID = 9 A; Tj = 150 °C - 18 20.5 mΩ

RDSon drain-source on-state

resistance

VGS = 4.5 V; ID = 3.7 A; Tj = 25 °C - 14 16.5 mΩ

gfs forward

transconductance

VDS = 10 V; ID = 9 A; Tj = 25 °C - 20 - S

RGgate resistance f = 1 MHz - 1.6 - Ω

Dynamic characteristics

QG(tot) total gate charge - 13.7 20.6 nC

QGS gate-source charge - 1.73 - nC

QGD gate-drain charge

VDS = 15 V; ID = 6 A; VGS = 10 V;

Tj = 25 °C

- 1.71 - nC

Ciss input capacitance - 840 - pF

Coss output capacitance - 155 - pF

Crss reverse transfer

capacitance

VDS = 15 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

- 65 - pF

td(on) turn-on delay time - 9 - ns

trrise time - 10 - ns

td(off) turn-off delay time - 17 - ns

tffall time

VDS = 15 V; ID = 5 A; VGS = 4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

- 9 - ns

Source-drain diode

VSD source-drain voltage IS = 2.2 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 7 / 15

VDS (V)

0 431 2

017aaa554

(A)

VGS = 5 V

3 V

2.7 V

2.5 V

2.3 V

2.1 V

2.9 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

017aaa555

10-4

10-5

10-3

(A)

10-6

VGS (V)

0.0 2.52.01.0 1.50.5

min typ max

Tj = 25 °C; VDS = 5 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

ID (A)

0 252010 155

017aaa556

RDSon

(mΩ)

VGS = 2.75 V

2.5 V 3.0 V

3.25 V

3.5 V

4.0 V

5.0 V

4.5 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

VGS (V)

0 862 4

017aaa557

RDSon

(mΩ)

Tj= 25 °C

Tj= 150 °C

ID = 8 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 8 / 15

017aaa558

VGS (V)

0 321

(A)

Tj= 25 °CTj= 150 °C

VDS > ID × RDSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60 1801200 60

017aaa559

1.0

1.4

1.8

0.6

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

Tj (°C)

-60 1801200 60

017aaa560

1.0

1.5

0.5

2.0

2.5

VGS(th)

(V)

0.0

min

typ

max

ID = 0.25 mA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

VDS (V)

10-1 102

101

017aaa561

103

102

104

(pF)

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 9 / 15

017aaa562

QG (nC)

0 15105

VGS

(V)

ID = 5 A; VDS = 15 V; Tamb = 25 °C

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

Fig. 15. Gate charge waveform definitions

VSD (V)

0.0 1.00.80.4 0.60.2

017aaa552

1.0

1.5

0.5

2.0

2.5

(A)

0.0

Tj= 25 °CTj= 150 °C

VGS = 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 10 / 15

11. Test information

006aaa812

duty cycle δ =

Fig. 17. Duty cycle definition

12. Package outline

12-04-30Dimensions in mm

1.1

1.3

1.9

2.1

1.9

2.1 1.0

1.2

0.51

0.61

0.2

0.3

0.65

0.25

0.35

0.2

0.3

Fig. 18. Package outline DFN2020MD-6 (SOT1220)

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 11 / 15

13. Soldering

1.35

1.25

1.05

0.9

1.1

1.2

2.5

0.935 0.935

SOT1220Footprint information for reflow soldering of DFN2020MD-6 package

sot1220_fr

occupied area

solder land

solder resist

solder land plus solder paste

solder paste deposit

Dimensions in mm

0.33 (6×) 0.76

0.66

0.56

0.25 0.35 0.45

0.25 (6×)

0.35 (6×)

0.65

0.45 (6×)

0.43 (6×)

0.53 (6×)

2.06

0.775

0.285

Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 12 / 15

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PMPB11EN v.2 20140114 Product data sheet - PMPB11EN v.1

Modifications: •Table 7: parameter value of VDS corrected from 10 V to 15 V in capacitance condition.

•Figure 16: VSD parameter corrected.

PMPB11EN v.1 20120516 Product data sheet - -

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 13 / 15

15. Legal information

15.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

15.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

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with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Characteristics sections of this document is not warranted. Constant or

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the quality and reliability of the device.

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No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 14 / 15

grant, conveyance or implication of any license under any copyrights, patents

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In the event that customer uses the product for design-in and use in

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Translations — A non-English (translated) version of a document is for

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15.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors PMPB11EN

30 V N-channel Trench MOSFET

Product data sheet 14 January 2014 15 / 15

16. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information ............................................. 2

7 Marking ................................................................... 2

8 Limiting values .......................................................3

9 Thermal characteristics .........................................4

10 Characteristics ....................................................... 6

11 Test information ................................................... 10

12 Package outline ................................................... 10

13 Soldering .............................................................. 11

14 Revision history ................................................... 12

15 Legal information .................................................13

15.1 Data sheet status ............................................... 13

15.2 Definitions ...........................................................13

15.3 Disclaimers .........................................................13

15.4 Trademarks ........................................................ 14

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 14 January 2014