DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK2135 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2135 is N-channel Power MOS Field Effect Tran- PACKAGE DIMENSIONS sistor designed for high voltage switching applications. tin millimeters) FEATURES 10.0403 @ Low On-state Resistance Roston} = 0.18 Q MAX. (Ves = 10 V, Ip = 7.0 A) Low Ciss Ciss = 1 100 pF TYP. @ High Avalanche Capability Ratings 15.0403 12.00.2 QUALITY GRADE Standard Please referto Quality grade on NEC Semiconductor Devices (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) 73502 o6st0in | 25401 Drain to Source Voltage Vpss 200 Vv 1.5+0.2 Gate to Source Voltage Vess +30 V 2.54 TYP, Drain Current (DC) lowe} +14 A Drain Current (pulse) ID(pulse)* +56 A 1. Gate ~ Single Avalanche Current las** 14 A 2. Drain Single Avalanche Energy Eas** 392 md 12 3 3. Source Total Power Dissipation (Tc = 25 C) Pri 35 W Total Power Dissipation (Ta = 25 C) Pra 2.0 Ww Drain (D) Storage Temperature Tstg -55 to+150 C ** Starting Teh = 25 C, Ra = 25 Q, Ves = 20 V 5 0 Channel Temperature Teh 150 C < < i * PW 10 us, Duty Cycle 31% Gate (G)c body diode Source (S) Document No. TC-2467 (0.D. No. TC-7998) Date Published November 1993 M NEC Corporation 1993 Printed in JapanNEC 2SK2135 ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain to Source On-state Resistance Roston) 0.18 Q Ves=10V,lo=7A Gate to Source Cutoff Voltage Vestoth 2.0 4.0 v Vos = 10V, lo=1mA Forward Transfer Admittance | yts | 4.0 Ss Vos = 10V,lb=7A Drain Leakage Current loss 100 HA Vos = 200 V, Ves = 0 Gate to Source Leakage Current less +100 nA Ves = +30 V, Vos = 0 Input Capacitance Ciss 1100 pF Vos = 10 V Output Capacitance Coss 540 pF Ves = 0 Reverse Transfer Capacitance Crss 190 pF f= 1 MHz Turn-On Delay Time td (on) 20 ns Ves = 10 V Rise Time tr 50 ns Von = 100 V Turn-Off Delay Time ta tom 65 ns b= 7 A, Ra = 102 . Ris 14.3.0 Fall Time tr 25 ns Total Gate Charge Qe 30 nc Ves = 10 V Gate to Source Charge Qes 7.0 nc ID=14A Gate to Drain Charge Qep 15 nc Von = 160 V Diode Forward Voltage VFis-D) 1.0 Vv lr = 14A, Ves = 0 Reverse Recovery Time ter 170 ns Ins 144A Reverse Recovery Charge Orr 0.6 uc di/dt = 50 A/us Test Circuit 1: Avalanche Capability Test Circuit 2 : Switching Time DUT D.U.T. Re = 25 2 L Rt 9 Ves fon} PG PG Re Ves = 20 0V 50 & I @) Re=102 Jvc Ves 0 FPomram| te tont tre te ton tr T T=1uS Duty Cycle 1 % Test Circuit 3 : Gate Charge D.U.T. Ie=2 mA Ri PG. 50 Q NEC 2SK2135 TYPICAL CHARACTERISTICS (Ta = 25 C) DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs. SAFE OPERATING AREA CASE TEMPERATURE = 400 = \ 3 N\ 5 a 99 N = 3 a 2 Ne & & NN Fal 5 60 N : WN a oO gs oa 5 40 NX 3 5 ce Ee & 20 ~ ' IN & 5 N 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tc Case Temperature C Tc Case Temperature C DRAIN CURRENT vs. FORWARD BIAS SAFE OPERATING AREA DRAIN TO SOURCE VOLTAGE 100 Pulsed 10 c <x I ! 10 2 5 5 oO oO < & o 1.0 o 2 2 c = 25 C 0.1 Single 1 10 100 1 000 0 5 10 15 Vos Drain to Source Voltage V Vos - Drain to Source Voltage V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 < Ta = -25 125 3 = | g a I 2 0.1 5 10 15 Ves ~- Gate to Source Voltage VNEC 2SK2135 | ys |~ Forward Transfer Admittance S oO Lo Rosion - Drain to Source On-State Resistance Q DRAIN CURRENT 100 10 oO TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH = 3! 000 I 8 100 S B @ 10 a 5 1 = e & 0.1 wn * 0.01 S Tc = 25C Fo.001 Single Pulse = 104 1004u Im 10m 100m 1 10 100 1 000 PW - Pulse Width -s FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 ps = 10 Pulsed Pulsed Oo 2S oa Roston) - Drain to Source On-State Resistance - Q 1.0 10 100 0 10 20 30 lo Drain Current-A Ves Gate to Source Voltage V DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs. RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE ps = 10 Vestn - Gate to Source Cutoff Voltage - V 10 100 ~50 0 50 100 150 Ip Drain Current-A Ten ~ Channel Temperature CNEC 2SK2135 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ~50 0 50 100 150 Ten Channel Temperature C Rosten) ~ Drain to Source On-State Resistance - Q CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 tance pF 1 000 i 100 Ciss, Coss, Crss Capac = OQ 10 100 7 000 Vos ~ Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 200 16 lDb=14A 14 12 = ai oO 10 8 6 4 qi Qo 2 Vos Drain to Source Voltage V a oO 0 4 8 12 16 20 24 Qg - Gate Charge nC 28 32 Vos Gate to Source Voltage - V Iso Diode Forward Current - A 1 000 taton}, tr, toot, tt - Switching Time - ns 10 000 tr Reverse Recovery Diode ns 1 000 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 1.0 0.1 0 04 08 412 16 20 24 28 Vso Source to Drain Voltage ~ V SWITCHING CHARACTERISTICS 100 10 DD = es = 10V 0.1 1.0 10 100 lo Drain Current -A REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 10 0.1 1.0 10 100 lo Drain Current - ANEC 2SK2135 SINGLE AVALANCHE ENERGY vs. SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD STARTING CHANNEL TEMPERATURE 100 400 > Vop = 150 V x= E ' 1 = > 3 S 300 i 10 5 o Oo 5 5 & 200 a 2 @ 10 a 2 100 a a I = 150V | 3 =20V70 2 9 100 yt Im 10m 100 m 25 50 75 100 125 150 L- Inductive Load -H Starting Ten - Starting Channel Temperature CNEC 2SK2135 [MEMO]Reference Application note name No. Safe operating area of Power MOS FET. TEA-1034 Application circuit using Power MOS FET. TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. IEl-1207 2SK2135 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 Se