CD214A-B1100R - BOURNS - Datasheet.Directory

Features

n RoHS compliant*

n Low proﬁle

n Low power loss, high efﬁciency

n UL 94V-0 classiﬁcation

Applications

n Switch Mode Power Supplies

n Portable equipment batteries

n High frequency rectiﬁcation

n DC/DC Converters

n Telecommunications

CD214A-B1xR Series Schottky Barrier Rectiﬁer Chip Diode

*RoHS Directive 2015/863, Mar 31, 2015 and Annex.

Speciﬁcations are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.

Users should verify actual device performance in their speciﬁc applications.

General Information

Portable communications, computing and video equipment manufacturers are challenging the

semiconductor industry to develop increasingly smaller electronic components.

Bourns offers Schottky Rectier Diodes for rectication applications, in a compact chip

package compatible with DO-214AC (SMA) size format. The Schottky Rectier Diodes offer a

forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V.

Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)

Parameter Symbol CD214A- Unit

B120R B120LR B140R B140LR B160R B1100R

Maximum Repetitive Peak Reverse Voltage VRRM 20 20 40 40 60 100 V

Maximum Average Forward Current IF(AV) 1 A

Maximum Peak Forward Surge Current

(8.3 ms Single Half Sine-Wave) IFSM 30 A

Operating Junction Temperature Range TOPR -55 to +125 -55 to +150 °C

Storage Temperature Range TSTG -55 to +150 °C

*RoHS COMPLIANT

LEAD FREE

*RoHS COMPLIANT

VERSIONS

AVAILABLE

LEAD FREE

VERSIONS ARE

RoHS COMPLIANT*

Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)

Parameter Symbol Condition or Model Min. Typ. Max. Unit

Maximum Instantaneous Forward Voltage

@1 A (NOTE 1) VF

CD214A-B120LR

CD214A-B140LR 0.37 0.38

CD214A-B120R

CD214A-B140R 0.47 0.50

CD214A-B160R 0.60 0.70

CD214A-B1100R 0.76 0.85

DC Reverse Current IRVR =

VRRM

CD214A-B120LR

CD214A-B140LR 0.35 1.0 mA

CD214A-B120R

CD214A-B140R

CD214A-B160R

CD214A-B1100R

0.02 0.2 mA

Typical Junction Capacitance CJVR = 4 V, f = 1.0 MHz 110 pF

Typical Thermal Resistance

(NOTE 2)

Junction to

Ambient RθJA

CD214A-B120R

CD214A-B140R

CD214A-B160R

CD214A-B1100R

°C/W

CD214A-B120LR

CD214A-B140LR 55

Junction to

Lead RθJL

CD214A-B120R

CD214A-B140R

CD214A-B160R

CD214A-B1100R

CD214A-B120LR

CD214A-B140LR 17

NOTES: (1) Pulse width 300 microsecond, 1 % duty cycle. (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas.

3312 - 2 mm SMD Trimming Potentiometer

Speciﬁcations are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different

applications and actual device performance may vary over time.

Users should verify actual device performance in their speciﬁc applications.

CD214A-B1xR Series Schottky Barrier Rectiﬁer Chip Diode

Performance Graphs

Forward Current Derating Curve Maximum Peak Forward Surge Current

Typical Instantaneous Forward Characteristics Typical Reverse Characteristics

Typical Junction Capacitance

1.0

0.5

0255075 100 125 150

Average Forward Rectified Current (Amps)

Lead Temperature (°C)

Resistive or

Inductive Load

PCB Mounted on

5.0 x 5.0 mm

(0.2 x 0.2 inch)

Copper Pad Areas

010 100

Peak Forward Surge Current (Amps)

Number of Cycles @ 60 Hz

8.3 ms

Single Half

Sine-Wave

(JEDEC Method)

0.01

0.10

0.001

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (Volts)

0.01

0.1

100

0.001

02040 60 80 100

Instantaneous Reverse Current (mA)

Percent of Rated Peak Reverse Voltage (%)

TJ = 100 °C

400

100

0.1 1.0 10 100

Junction Capacitance (pF)

Reverse Voltage (Volts)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVP-P

CD214A-B120R, -B140R,

CD214A-B120LR, -B140LR

CD214A-B160R, -B1100R

CD214A-B120LR, -B140LR

CD214A-B120R, -B140R

CD214A-B160R, -B1100R

CD214A-B120LR, -B140LR

CD214A-B120R, -B140R

CD214A-B160R

CD214A-B1100R

CD214A-B120LR, -B140LR

CD214A-B120R, -B140R,

-B160R, -B1100R

TJ = 25 °C

TJ = 100 °C

CD214A-B1xL SERIES

1.0

0.5

02550 75 100 125 150

Average Forward Rectified Current (Amps)

Lead Temperature (°C)

Resistive or

Inductive Load

PCB Mounted on

5.0 x 5.0 mm

(0.2 x 0.2 inch)

Copper Pad Areas

010 100

Peak Forward Surge Current (Amps)

Number of Cycles @ 60 Hz

8.3 ms

Single Half

Sine-Wave

(JEDEC Method)

0.01

0.10

0.001

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (Volts)

0.01

0.1

100

0.001

02040 60 80 100

Instantaneous Reverse Current (mA)

Percent of Rated Peak Reverse Voltage (%)

TJ = 100 °C

400

100

0.1 1.0 10 100

Junction Capacitance (pF)

Reverse Voltage (Volts)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVP-P

CD214A-B120R, -B140R,

CD214A-B120LR, -B140LR

CD214A-B160R, -B1100R

CD214A-B120LR, -B140LR

CD214A-B120R, -B140R

CD214A-B160R, -B1100R

CD214A-B120LR, -B140LR

CD214A-B120R, -B140R

CD214A-B160R

CD214A-B1100R

CD214A-B120LR, -B140LR

CD214A-B120R, -B140R,

-B160R, -B1100R

TJ = 25 °C

TJ = 100 °C

CD214A-B1xL SERIES

1.0

0.5

02550 75 100 125 150

Average Forward Rectified Current (Amps)

Lead Temperature (°C)

Resistive or

Inductive Load

PCB Mounted on

5.0 x 5.0 mm

(0.2 x 0.2 inch)

Copper Pad Areas

010 100

Peak Forward Surge Current (Amps)

Number of Cycles @ 60 Hz

8.3 ms

Single Half

Sine-Wave

(JEDEC Method)

0.01

0.10

0.001

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (Volts)

0.01

0.1

100

0.001

02040 60 80 100

Instantaneous Reverse Current (mA)

Percent of Rated Peak Reverse Voltage (%)

TJ = 100 °C

400

100

0.1 1.0 10 100

Junction Capacitance (pF)

Reverse Voltage (Volts)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVP-P

CD214A-B120R, -B140R,

CD214A-B120LR, -B140LR

CD214A-B160R, -B1100R

CD214A-B120LR, -B140LR

CD214A-B120R, -B140R

CD214A-B160R, -B1100R

CD214A-B120LR, -B140LR

CD214A-B120R, -B140R

CD214A-B160R

CD214A-B1100R

CD214A-B120LR, -B140LR

CD214A-B120R, -B140R,

-B160R, -B1100R

TJ = 25 °C

TJ = 100 °C

CD214A-B1xL SERIES

3312 - 2 mm SMD Trimming Potentiometer

DIA. G

D D

Speciﬁcations are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.

Users should verify actual device performance in their speciﬁc applications.

CD214A-B1xR Series Schottky Barrier Rectiﬁer Chip Diode

Product Dimensions Recommended Pad Layout

DIMENSIONS: MM

(INCHES)

Dimension CD214A-B1 Series

A4.5 ± 0.10

(0.177 ± 0.004)

B2.20 ± 0.10

(0.087 ± 0.004)

C (Dia.) 0.50

(0.020)

D0.95 ± 0.20

(0.037 ± 0.008)

E0.96 +0.20/-0.10

(0.038 +0.008/-0.004)

DIMENSIONS: MM

(INCHES)

Typical Part Marking

Dimension CD214A-B1 Series

F2.60

(0.102) MAX.

G1.47

(0.058) MIN.

H1.27

(0.050) MIN.

I5.14

(0.202) REF.

DEVICE CODE:

102 = CD214A-B120R

102L = CD214A-B120LR

104 = CD214A-B140R

104L = CD214A-B140LR

106 = CD214A-B160R

110 = CD214A-B1100R

102

YWW

DATE CODE:

Y = LAST

DIGIT OF

YEAR

WW = WEEK

NUMBER

How to Order

CD 214A - B 1 20 L R

Common Code

CD = Chip Diode

Package

214A = SMA/DO-214AC Compatible

Model

B = Schottky Barrier Series

Maximum Average Forward Rectied Current

1 = 1 A

Maximum Repetitive Peak Reverse Voltage

20 = 20 V

40 = 40 V

60 = 60 V

100 = 100 V

Forward Voltage Sufx

L = Low Forward Voltage

Environmental Specications

Moisture Sensitivity Level ................................................................1

ESD Classication (HBM)............................................................. 3B

3312 - 2 mm SMD Trimming Potentiometer

Speciﬁcations are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in

different applications and actual device performance may vary over time.

Users should verify actual device performance in their speciﬁc applications.

CD214A-B1xR Series Schottky Barrier Rectiﬁer Chip Diode

Packaging Information

.......

....... ..............

P A

120 °

Index Hole

30 pitches

Direction of Feed

30 pitches

End

Trailer Device Leader

Start

The product is dispensed in tape and reel format (see diagram below).

DIMENSIONS: MM

(INCHES)

Item Symbol CD214A-B1 Series

Carrier Width A 2.45 ± 0.10

(0.096 ± 0.004)

Carrier Length B4.75 ± 0.10

(0.187 ± 0.004)

Carrier Depth C 1.51 ± 0.10

(0.059 ± 0.004)

Sprocket Hole d1.50 ± 0.10

(0.059 ± 0.004)

Reel Outside Diameter D 178 ± 2.0

(7.008 ± 0.079)

Reel Inner Diameter D1 50.0

(1.969) MIN.

Feed Hole Diameter D2 13.0 ± 0.50

(0.512 ± 0.020)

Sprocket Hole Position E 1.75 ± 0.10

(0.069 ± 0.004)

Punch Hole Position F 5.50 ± 0.05

(0.217 ± 0.002)

Punch Hole Pitch P 4.00 ± 0.10

(0.157 ± 0.004)

Sprocket Hole Pitch P0 4.00 ± 0.10

(0.157 ± 0.004)

Embossment Center P1 2.00 ± 0.10

(0.079 ± 0.004)

Overall Tape Thickness T 0.40

(0.016) MAX.

Tape Width W 12.00 ± 0.30

(0.472 ± 0.012)

Reel Width W118.7

(0.736) MAX.

Quantity per Reel -- 3,000

01/18

Asia-Pacic:

Tel: +886-2 2562-4117

Email: asiacus@bourns.com

Europe:

Tel: +36 88 520 390

Email: eurocus@bourns.com

The Americas:

Tel: +1-951 781-5500

Email: americus@bourns.com