©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
TIP145F/146F/147F
PNP Epitaxial Darlin gton Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Emitter Volt age : TIP145F
: TIP146F
: TIP147F
- 60
- 80
- 100
V
V
V
VCEO Collector-Emitter Volt age : TIP145F
: TIP146F
: TIP147F
- 60
- 80
- 100
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 10 A
ICP Collector Current (Pulse) - 15 A
IB Base Current (DC) - 0.5 A
PC Collector Dissipati on (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP145F
: TIP146F
: TIP147F
IC = - 30mA, IB = 0 - 60
- 80
- 100
V
V
V
ICEO Collector Cut-off Current : TIP145F
: TIP146F
: TIP147F
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
- 2
- 2
- 2
mA
mA
mA
ICBO Collector Cut-of f Current : TIP145F
: TIP146F
: TIP147F
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
- 1
- 1
- 1
mA
mA
mA
IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 - 2 mA
hFE DC Current Gain VCE = - 4V, IC = - 5A
VCE = - 4V, IC = - 10A 1000
500
VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA
IC = - 10A, IB = - 40mA - 2
- 3 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V
VBE(on) Base-Emitter On Voltage VCE = - 4V, IC = - 10A - 3 V
tD Delay Time VCC = - 30V, IC = - 5A
IB1 = -20mA, IB2 = 20m A
RL = 6
0.15 µs
tR Rise Time 0.55 µs
tSTG St orage Time 2.5 µs
tf Fall Time 2.5 µs
TIP145F/146F/147F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (M in.)
Industrial Use
Complement to TIP140F/141F/142F
Equivalent Circuit
B
E
C
R1 R2
R
18
k
R
20.12
k
TO-3PF
1.Base 2.Collector 3.Emitter
1
©2002 Fairchild Semiconductor Corporation
TIP145F/146F/147F
Rev. B, December 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
IB = -2000µAIB = -1800µA
IB = -1600µA
IB = -1400µA
IB = -1200µA
IB = -1000µA
IB = -800µA
IB = -600µA
IB = -400µA
IC[A], COLLECTOR CURRENT
VCE[V], CO LLEC TO R- EMITT ER VO L TAG E
-0.1 -1 -10 -100
100
1000
10000
100000 VCE = -4V
hFE, DC CURRENT GAIN
IC[A], COLL EC T OR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10 IC=-500IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOL TAG E
IC[A], COL L EC TOR CURRENT
-1 -10 -100 -1000
-10
-100
-1000 f=0.1MHz
VCB[V], COLLECTOR-BA SE VOLTAGE
Cob[pF], CA PAC IT AN CE
-1 -10 -100 -1000
-0.1
-1
-10
-100
TIP146F
TIP147F
TIP145F
DC
IC[A], COL L ECTOR CU RRE NT
VCE[V], COL L EC TOR -EMITTER V O LTAG E
0 255075100125150175
0
10
20
30
40
50
60
70
80
PC[W], P O WER DIS S IPA T IO N
TC[oC], CASE TEMPERATURE
Package Dimensions
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
TIP145F/146F/147F
Dimensions in Millimeters
15.50
±0.20
ø3.60
±0.20
26.50
±0.20
4.50
±0.20
10.00
±0.20
16.50
±0.20
10°
16.50
±0.20
22.00
±0.20
23.00
±0.20
1.50
±0.20
14.50
±0.20
2.00
±0.20
2.00
±0.20
2.00
±0.20
0.85
±0.03
2.00
±0.20
5.50
±0.20
3.00
±0.20
(1.50)
3.30
±0.20
2.00
±0.20
4.00
±0.20
2.50
±0.20
14.80
±0.20
3.30
±0.20
2.00
±0.20
5.50
±0.20
0.75
+0.20
–0.10
0.90
+0.20
–0.10
5.45TYP
[5.45
±0.30
]5.45TYP
[5.45
±0.30
]
TO-3PF
©2002 Fairchild Semiconductor Corporation Rev. I1
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