M TC4467/TC4468/TC4469 Logic-Input CMOS Quad Drivers Features General Description * High Peak Output Current: 1.2 A * Wide Operating Range: - 4.5 V to 18 V * Symmetrical Rise/Fall Times: 25 nsec * Short, Equal Delay Times: 75 nsec * Latch-proof. Will Withstand 500 mA Inductive Kickback * 3 Input Logic Choices: - AND / NAND / AND + Inv * ESD Protection on All Pins: 2 kV The TC4467/TC4468/TC4469 devices are a family of four-output CMOS buffers/MOSFET drivers with 1.2 A peak drive capability. Unlike other MOSFET drivers, these devices have two inputs for each output. The inputs are configured as logic gates: NAND (TC4467), AND (TC4468) and AND/INV (TC4469). Applications * * * * * * General Purpose CMOS Logic Buffer Driving All Four MOSFETs in an H-Bridge Direct Small Motor Driver Relay or Peripheral Drivers CCD Driver Pin-Switching Network Driver The TC4467/TC4468/TC4469 drivers can continuously source up to 250 mA into ground referenced loads. These devices are ideal for direct driving low current motors or driving MOSFETs in a H-bridge configuration for higher current motor drive (see Section 5.0 for details). Having the logic gates onboard the driver can help to reduce component count in many designs. The TC4467/TC4468/TC4469 devices are very robust and highly latch-up resistant. They can tolerate up to 5 V of noise spiking on the ground line and can handle up to 0.5 A of reverse current on the driver outputs. The TC4467/4468/4469 devices are available in commercial, industrial and military temperature ranges. Package Types 14-Pin PDIP/CERDIP 14 VDD 1A 1 1B 2 2A 3 2B 4 3A 5 13 1Y TC4467 TC4468 TC4469 12 2Y 11 3Y 10 4Y 3B 6 9 4B GND 7 8 4A 16-Pin SOIC (Wide) 16 15 14 13 VDD VDD 12 3Y 11 4Y 7 10 4B 8 9 4A 1A 1B 2A 2B 1 2 3 4 3A 5 3B 6 GND GND TC4467 TC4468 TC4469 2002 Microchip Technology Inc. 1Y 2Y DS21425B-page 1 TC4467/TC4468/TC4469 Logic Diagrams TC4467 TC4468 TC4469 VDD VDD VDD 14 14 1A 1 1B 2 1A 1B 1 2 13 2A 2B 3 4 12 2Y 3A 3B 5 6 11 3Y 2A 3 2B 4 3A 5 3B 6 4A 4B 8 9 10 4Y 4A 8 4B 9 7 GND DS21425B-page 2 1Y 12 2Y 11 10 GND VDD 14 13 1Y 7 TC446X 3Y 4Y 1A 1 1B 2 13 1Y 2A 3 2B 4 3A 5 3B 6 12 2Y 11 4A 8 4B 9 10 Output 3Y 4Y 7 GND 2002 Microchip Technology Inc. TC4467/TC4468/TC4469 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings Supply Voltage ...............................................................+20 V Input Voltage ............................. (GND - 5 V) to (VDD + 0.3 V) Package Power Dissipation: (TA 70C) PDIP...................................................................800 mW CERDIP .............................................................840 mW SOIC ..................................................................760 mW Package Thermal Resistance: CERDIP R J-A ...................................................100C/W CERDIP R J-C .....................................................23C/W PDIP R J-A ..........................................................80C/W PDIP R J-C ..........................................................35C/W SOIC RJ-A ..........................................................95C/W SOIC RJ-C ..........................................................28C/W Operating Temperature Range: C Version ................................................... 0C to +70C E Version.................................................-40C to +85C M Version ..............................................-55C to +125C Maximum Chip Temperature ....................................... +150C Storage Temperature Range.........................-65C to +150C ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise noted, TA = +25C, with 4.5 V VDD 18 V. Parameters Sym Min Typ Max Units Conditions Input Logic 1, High Input Voltage VIH 2.4 -- VDD V Note 3 Logic 0, Low Input Voltage V IL -- -- 0.8 V Note 3 Input Current IIN -1.0 -- +1.0 A High Output Voltage VOH VDD - 0.025 -- -- V Low Output Voltage VOL -- -- 0.15 V ILOAD = 10 mA (Note 1) Output Resistance RO -- 10 15 IOUT = 10 mA, VDD = 18 V Peak Output Current IPK -- 1.2 -- A Continuous Output Current IDC -- -- 300 mA -- -- 500 I -- 500 -- mA 0 V VIN VDD Output Latch-Up Protection Withstand Reverse Current ILOAD = 100 A (Note 1) Single Output Total Package 4.5 V VDD 16 V Switching Time (Note 1) Rise Time tR -- 15 25 nsec Figure 4-1 Fall Time tF -- 15 25 nsec Figure 4-1 Delay Time tD1 -- 40 75 nsec Figure 4-1 Delay Time tD2 -- 40 75 nsec Figure 4-1 Power Supply Current IS -- 1.5 4 mA Power Supply Voltage VDD 4.5 -- 18 V Power Supply Note 1: 2: 3: Note 2 Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching times are ensured by design. When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt will cause high-power dissipation in the device. The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 sec to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device. 2002 Microchip Technology Inc. DS21425B-page 3 TC4467/TC4468/TC4469 ELECTRICAL SPECIFICATIONS (OPERATING TEMPERATURES) Electrical Characteristics: Unless otherwise noted, over operating temperature range with 4.5 V VDD 18 V. Parameters Sym Min Typ Max Units Conditions Logic 1, High Input Voltage VIH 2.4 -- -- V Logic 0, Low Input Voltage V IL -- -- 0.8 V Input Current IIN -10 -- 10 A High Output Voltage VOH VDD - 0.025 -- -- V Low Output Voltage VOL -- -- 0.30 V ILOAD = 10 mA (Note 1) Output Resistance RO -- 20 30 IOUT = 10 mA, VDD = 18 V Peak Output Current IPK -- 1.2 -- A Continuous Output Current IDC -- -- 300 mA Input Note 3 Note 3 0 V VIN VDD Output Latch-Up Protection Withstand Reverse Current -- -- 500 I -- 500 -- mA ILOAD = 100 A (Note 1) Single Output Total Package 4.5 V VDD 16 V Switching Time (Note 1) Rise Time tR -- 15 50 nsec Figure 4-1 Fall Time tF -- 15 50 nsec Figure 4-1 Delay Time tD1 -- 40 100 nsec Figure 4-1 Delay Time tD2 -- 40 100 nsec Figure 4-1 Power Supply Power Supply Current IS -- -- 8 mA Power Supply Voltage VDD 4.5 -- 18 V Note 1: 2: 3: Note 2 Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching times are ensured by design. When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt will cause high-power dissipation in the device. The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 sec to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device. TRUTH TABLE Part No. TC4467 NAND Inputs A H H L TC4468 AND L H H L TC4469 AND/INV L H H L L Inputs B H L H L H L H L H L H L Outputs TC446X L H H H H L L L L H L L Legend: H = High L = Low DS21425B-page 4 2002 Microchip Technology Inc. TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: TA = +25C, with 4.5 V VDD 18 V. 140 140 2200 0p pF 120 2200 pF 100 1600 pF p 80 1000 pF 100 tFALL (nsec) tRISE (nsec) 120 60 1000 pF 60 470 pF 40 470 pF 20 100 pF 20 100 pF p 3 5 7 FIGURE 2-1: Voltage. 9 11 13 VSUPPLY (V) 15 0 19 17 5 7 9 11 13 VSUPPLY (V) 15 19 17 Fall Time vs. Supply 140 120 5V 120 5V 100 tFALL (nsec) 100 80 10 V 15 V 60 80 40 20 20 0 100 FIGURE 2-2: Load. 0 100 10,000 1000 CLOAD (pF) 10 V 15 V 60 40 10,000 1000 CLOAD (pF) FIGURE 2-5: Load. Rise Time vs. Capacitive 25 Fall Time vs. Capacitive 80 VSUPPLY = 17.5 V CLOAD = 470 pF CLOAD = 4 470 pF DELAY TIME (nsec) 20 3 FIGURE 2-4: Voltage. Rise Time vs. Supply 140 tRISE (nsec) 80 40 0 TIME (nsec) 1500 pF tFALL 15 tRISE 10 60 tD1 40 tD2 20 5 0 -50 0 -25 0 25 50 75 100 125 4 6 TEMPERATURE (C) FIGURE 2-3: Temperature. Rise/Fall Times vs. 2002 Microchip Technology Inc. 8 10 12 14 16 18 VSUPPLY (V) FIGURE 2-6: Supply Voltage. Propagation Delay Time vs. DS21425B-page 5 TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: TA = +25C, with 4.5 V VDD 18 V. 140 70 VDD = 12 V VDD = 17.5 V = 470 pF VIN DELAY TIME (nsec) DELAY TIME (nsec) 120 INPUT RISING 100 tD2 80 60 tD1 INPUT FALLING 40 tD1 50 tD2 40 30 20 0 60 1 2 3 4 FIGURE 2-7: Times. 5 6 VDRIVE (V) 7 8 20 -60 10 9 -40 -20 0 FIGURE 2-10: vs. Temperatures. Input Amplitude vs. Delay 20 40 60 C) 80 100 120 Propagation Delay Times 3.5 2.5 VDD = 17.5 V 2.0 IQUIESCENT (mA) IQUIESCENT (mA) 3.0 OUTPUTS = 0 1.5 1.0 OUTPUTS = 1 0.5 6 8 10 12 VSUPPLY (V) 14 16 OUTPUTS = 1 1.0 -40 -20 0 FIGURE 2-11: vs. Temperature. 20 40 60 TJUNCTION (C) 80 100 120 Quiescent Supply Current 35 35 30 30 TJ = +150C 25 RDS(ON) () 25 RDS(ON) () 1.5 0 -60 18 FIGURE 2-8: Quiescent Supply Current vs. Supply Voltage. 20 TJ = +25C 15 20 10 5 5 4 6 FIGURE 2-9: Resistance. DS21425B-page 6 8 10 12 V SUPPLY (V) 14 High-State Output 16 18 TJ = +150C 15 10 0 OUTPUTS = 0 2.0 0.5 0 4 2.5 0 TJ = +25C 4 6 FIGURE 2-12: Resistance. 8 10 12 V (V) SUPPLY 14 16 18 Low-State Output 2002 Microchip Technology Inc. TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: (Load on single output only). 60 60 VDD = 18 V VDD = 18 V 2 MH Hz 50 2200 pF 50 1 MH MHz ISUPPLY (mA) ISUPPLY (mA) 1000 pF 40 30 50 00 kHz 20 200 kHz 10 0 100 FIGURE 2-13: Capacitive Load. 20 100 pF p 0 10 10,000 100 1000 FREQUENCY (kHz) FIGURE 2-16: Frequency. Supply Current vs. 60 2 MHz Supply Current vs. 2200 pF VDD = 12 V 50 50 ISUPPLY (mA) 40 1 MHz 30 20 500 kHz 10 FIGURE 2-14: Capacitive Load. 40 1000 pF p 30 20 100 pF 10 200 kHz 0 100 20 kHz 0 10,000 1000 CLOAD (pF) 10 100 FREQUENCY (kHz) FIGURE 2-17: Frequency. Supply Current vs. 60 1000 10,000 Supply Current vs. 60 VDD = 6 V VDD = 6 V 50 50 40 40 30 ISUPPLY (mA) ISUPPLY (mA) 10,000 60 VDD = 12 V ISUPPLY (mA) 30 10 20 kHz 1000 CLOAD (pF) 40 2 MHz 20 1 MHz 500 kHz 200 kHz 20 kHz 10 0 100 FIGURE 2-15: Capacitive Load. 1000 CLOAD (pF) Supply Current vs. 2002 Microchip Technology Inc. 2200 pF 30 20 1000 pF 10 100 pF 10,000 0 10 FIGURE 2-18: Frequency. 100 1000 FREQUENCY (kHz) 10,000 Supply Current vs. DS21425B-page 7 TC4467/TC4468/TC4469 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE 14-Pin PDIP, CERDIP 16-Pin SOIC (Wide) Symbol Symbol 1A 1A Input A for Driver 1, TTL/CMOS Compatible Input 1B 1B Input B for Driver 1, TTL/CMOS Compatible Input 2A 2A Input A for Driver 2, TTL/CMOS Compatible Input 2B 2B Input B for Driver 2, TTL/CMOS Compatible Input 3A 3A Input A for Driver 3, TTL/CMOS Compatible Input Input B for Driver 3, TTL/CMOS Compatible Input Description 3B 3B GND GND Ground -- GND Ground 4A 4A Input A for Driver 4, TTL/CMOS Compatible Input 4B 4B Input B for Driver 4, TTL/CMOS Compatible Input 4Y 4Y Output for Driver 4, CMOS Push-Pull Output 3Y 3Y Output for Driver 3, CMOS Push-Pull Output 2Y 2Y Output for Driver 2, CMOS Push-Pull Output 1Y 1Y Output for Driver 1, CMOS Push-Pull Output VDD VDD Supply Input, 4.5 V to 18 V -- VDD Supply Input, 4.5 V to 18 V DS21425B-page 8 2002 Microchip Technology Inc. TC4467/TC4468/TC4469 4.0 DETAILED DESCRIPTION 4.4 4.1 Supply Bypassing The supply current versus frequency and supply current versus capacitive load characteristic curves will aid in determining power dissipation calculations. Microchip Technology's CMOS drivers have greatly reduced quiescent DC power consumption. Large currents are required to charge and discharge large capacitive loads quickly. For example, charging a 1000 pF load to 18 V in 25 nsec requires 0.72 A from the device's power supply. To ensure low supply impedance over a wide frequency range, a 1 F film capacitor in parallel with one or two low-inductance, 0.1 F ceramic disk capacitors with short lead lengths (<0.5 in.) normally provide adequate bypassing. 4.2 Grounding The TC4467 and TC4469 contain inverting drivers. Potential drops developed in common ground impedances from input to output will appear as negative feedback and degrade switching speed characteristics. Instead, individual ground returns for input and output circuits, or a ground plane, should be used. 4.3 Input Stage Power Dissipation Input signal duty cycle, power supply voltage and load type influence package power dissipation. Given power dissipation and package thermal resistance, the maximum ambient operating temperature is easily calculated. The 14-pin plastic package junction-toambient thermal resistance is 83.3C/W. At +70C, the package is rated at 800 mW maximum dissipation. Maximum allowable chip temperature is +150C. Three components make up total package power dissipation: 1. 2. 3. Load-caused dissipation (PL). Quiescent power (PQ). Transition power (PT). A capacitive-load-caused dissipation (driving MOSFET gates), is a direct function of frequency, capacitive load and supply voltage. The power dissipation is: The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transistor drives a 2.5 mA current source load. With logic "0" outputs, maximum quiescent supply current is 4 mA. Logic "1" output level signals reduce quiescent current to 1.4 mA, maximum. Unused driver inputs must be connected to V DD or VSS. Minimum power dissipation occurs for logic "1" outputs. EQUATION The drivers are designed with 50 mV of hysteresis, which provides clean transitions and minimizes output stage current spiking when changing states. Input voltage thresholds are approximately 1.5 V, making any voltage greater than 1.5 V, up to VDD, a logic "1" input. Input current is less than 1 A over this range. A resistive-load-caused dissipation for groundreferenced loads is a function of duty cycle, load current and load voltage. The power dissipation is: 2 P L = fCV S f = Switching Frequency C = Capacitive Load V S = Supply Voltage EQUATION P L = D ( V S - V L )I L D = Duty Cycle V S = Supply Voltage V L = Load Voltage I L = Load Current 2002 Microchip Technology Inc. DS21425B-page 9 TC4467/TC4468/TC4469 EQUATION A resistive-load-caused dissipation for supplyreferenced loads is a function of duty cycle, load current and output voltage. The power dissipation is -9 P T = fV s ( 10 x 10 ) C = 1000 pF Capacitive Load V S = 15 V D = 50% f = 200 kHz EQUATION P L = DV O I L D = Duty Cycle V O = Device Output Voltage I L = Load Current PD = = = = Quiescent power dissipation depends on input signal duty cycle. Logic HIGH outputs result in a lower power dissipation mode, with only 0.6 mA total current drain (all devices driven). Logic LOW outputs raise the current to 4 mA maximum. The quiescent power dissipation is: Package Power Dissipation PL + PQ + PT 45mW + 35mW + 30mW 110mW Package power dissipation is the sum of load, quiescent and transition power dissipations. An example shows the relative magnitude for each term: Maximum operating temperature is: EQUATION EQUATION P Q = V S ( D ( IH ) + ( 1 - D )I L ) T J - JA ( P D ) = 141C I H = Quiescent Current with all outputs LOW (4 mA max.) I L = Quiescent Current with all outputs HIGH (0.6 mA max.) D = Duty Cycle V S = Supply Voltage T J = Maximum allowable junction temperature (+150C ) JA = Junction-to-ambient thernal resistance (83.3C/W) 14-pin plastic package Note: Ambient operating temperature should not exceed +85C for "EJD" device or +125C for "MJD" device. Transition power dissipation arises in the complimentary configuration (TC446X) because the output stage N-channel and P-channel MOS transistors are ON simultaneously for a very short period when the output changes. The transition power dissipation is approximately: VDD 1 F Film Input: 100 kHz, square wave, tRISE = tFALL 10 nsec 0.1 F Ceramic 14 1A 1B 2A 2B 3A 3B 4A 4B 1 2 13 3 4 12 5 6 11 8 9 10 VOUT 470 pF +5 V 90% Input (A, B) 0V VDD 10% tD1 90% tR Output 0V 10% tD2 90% tF 10% 7 FIGURE 4-1: DS21425B-page 10 Switching Time Test Circuit. 2002 Microchip Technology Inc. TC4467/TC4468/TC4469 5.0 APPLICATIONS INFORMATION +12 V 14 TC4469 1 13 Red 2 Motor 3 A B Airpax #M82102-P2 7.5/Step 12 4 Gray 5 11 Yel 6 8 10 Blk 9 7 FIGURE 5-1: Stepper Motor Drive. +5 V to +15 V 14 18 V Direction Fwd Rev PWM Speed 1 2 TC4469 13 3 4 12 5 6 11 8 9 10 M Motor 7 FIGURE 5-2: Quad Driver For H-bridge Motor Control. 2002 Microchip Technology Inc. DS21425B-page 11 TC4467/TC4468/TC4469 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 14-Lead PDIP (300 mil) Example: TC4467CPD XXXXXXXXXXXXXX XXXXXXXXXXXXXX YYWWNNN 14-Lead CERDIP (300 mil) YYWWNNN Example: XXXXXXXXXXXXXX XXXXXXXXXXXXXX YYWWNNN 16-Lead SOIC (300 mil) XXXXXXXXXXX XXXXXXXXXXX XXXXXXXXXXX YYWWNNN Legend: XX...X YY WW NNN Note: * TC4468EJD YYWWNNN Example: TC4469COE YYWWNNN Customer specific information* Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. Standard OTP marking consists of Microchip part number, year code, week code, facility code, mask rev#, and assembly code. DS21425B-page 12 2002 Microchip Technology Inc. TC4467/TC4468/TC4469 14-Lead Plastic Dual In-line (P) - 300 mil (PDIP) E1 D 2 n 1 E A2 A L c A1 eB B1 p B Units Dimension Limits n p MIN INCHES* NOM 14 .100 .155 .130 MAX MILLIMETERS NOM 14 2.54 3.56 3.94 2.92 3.30 0.38 7.62 7.94 6.10 6.35 18.80 19.05 3.18 3.30 0.20 0.29 1.14 1.46 0.36 0.46 7.87 9.40 5 10 5 10 MIN Number of Pins Pitch Top to Seating Plane A .140 .170 Molded Package Thickness A2 .115 .145 Base to Seating Plane A1 .015 Shoulder to Shoulder Width E .300 .313 .325 Molded Package Width E1 .240 .250 .260 Overall Length D .740 .750 .760 Tip to Seating Plane L .125 .130 .135 c Lead Thickness .008 .012 .015 Upper Lead Width B1 .045 .058 .070 Lower Lead Width B .014 .018 .022 Overall Row Spacing eB .310 .370 .430 Mold Draft Angle Top 5 10 15 Mold Draft Angle Bottom 5 10 15 * Controlling Parameter Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-005 2002 Microchip Technology Inc. MAX 4.32 3.68 8.26 6.60 19.30 3.43 0.38 1.78 0.56 10.92 15 15 DS21425B-page 13 TC4467/TC4468/TC4469 14-Lead Ceramic Dual In-line - 300 mil (CERDIP) 14-Pin CERDIP (Narrow) PIN 1 .300 (7.62) .230 (5.84) .098 (2.49) MAX. .030 (0.76) MIN. .780 (19.81) .740 (18.80) .320 (8.13) .290 (7.37) .040 (1.02) .020 (0.51) .200 (5.08) .160 (4.06) .015 (0.38) .150 (3.81) .008 (0.20) MIN. .200 (5.08) .125 (3.18) .110 (2.79) .090 (2.29) DS21425B-page 14 .065 (1.65) .045 (1.14) .020 (0.51) .016 (0.41) 3 MIN. .400 (10.16) .320 (8.13) Dimensions: inches (mm) 2002 Microchip Technology Inc. TC4467/TC4468/TC4469 16-Lead Plastic Small Outline (SO) - Wide, 300 mil (SOIC) E p E1 D 2 1 n B h 45 c A2 A L Units Dimension Limits n p Number of Pins Pitch Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter Significant Characteristic A A2 A1 E E1 D h L c B MIN .093 .088 .004 .394 .291 .398 .010 .016 0 .009 .014 0 0 A1 INCHES* NOM 16 .050 .099 .091 .008 .407 .295 .406 .020 .033 4 .011 .017 12 12 MAX .104 .094 .012 .420 .299 .413 .029 .050 8 .013 .020 15 15 MILLIMETERS NOM 16 1.27 2.36 2.50 2.24 2.31 0.10 0.20 10.01 10.34 7.39 7.49 10.10 10.30 0.25 0.50 0.41 0.84 0 4 0.23 0.28 0.36 0.42 0 12 0 12 MIN MAX 2.64 2.39 0.30 10.67 7.59 10.49 0.74 1.27 8 0.33 0.51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: MS-013 Drawing No. C04-102 2002 Microchip Technology Inc. DS21425B-page 15 TC4467/TC4468/TC4469 NOTES: DS21425B-page 16 2002 Microchip Technology Inc. TC4467/TC4468/TC4469 ON-LINE SUPPORT Microchip provides on-line support on the Microchip World Wide Web (WWW) site. The web site is used by Microchip as a means to make files and information easily available to customers. To view the site, the user must have access to the Internet and a web browser, such as Netscape or Microsoft Explorer. Files are also available for FTP download from our FTP site. Connecting to the Microchip Internet Web Site Systems Information and Upgrade Hot Line The Systems Information and Upgrade Line provides system users a listing of the latest versions of all of Microchip's development systems software products. Plus, this line provides information on how customers can receive any currently available upgrade kits.The Hot Line Numbers are: 1-800-755-2345 for U.S. and most of Canada, and 1-480-792-7302 for the rest of the world. 013001 The Microchip web site is available by using your favorite Internet browser to attach to: www.microchip.com The file transfer site is available by using an FTP service to connect to: ftp://ftp.microchip.com The web site and file transfer site provide a variety of services. Users may download files for the latest Development Tools, Data Sheets, Application Notes, User's Guides, Articles and Sample Programs. A variety of Microchip specific business information is also available, including listings of Microchip sales offices, distributors and factory representatives. Other data available for consideration is: * Latest Microchip Press Releases * Technical Support Section with Frequently Asked Questions * Design Tips * Device Errata * Job Postings * Microchip Consultant Program Member Listing * Links to other useful web sites related to Microchip Products * Conferences for products, Development Systems, technical information and more * Listing of seminars and events 2002 Microchip Technology Inc. DS21425B-page17 TC4467/TC4468/TC4469 READER RESPONSE It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150. Please list the following information, and use this outline to provide us with your comments about this Data Sheet. To: Technical Publications Manager RE: Reader Response Total Pages Sent From: Name Company Address City / State / ZIP / Country Telephone: (_______) _________ - _________ FAX: (______) _________ - _________ Application (optional): Would you like a reply? Y Device: TC4467/TC4468/TC4469 N Literature Number: DS21425B Questions: 1. What are the best features of this document? 2. How does this document meet your hardware and software development needs? 3. Do you find the organization of this data sheet easy to follow? If not, why? 4. What additions to the data sheet do you think would enhance the structure and subject? 5. What deletions from the data sheet could be made without affecting the overall usefulness? 6. Is there any incorrect or misleading information (what and where)? 7. How would you improve this document? 8. How would you improve our software, systems, and silicon products? DS21425B-page18 2002 Microchip Technology Inc. TC4467/TC4468/TC4469 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X XX Temperature Range Package Examples: a) b) c) Device: TC4467: TC4468: TC4469: 1.2A Quad MOSFET Driver, NAND 1.2A Quad MOSFET Driver, AND 1.2A Quad MOSFET Driver, AND/INV C E M 0C to +70C -40C to +85C (CERDIP only) -55C to +125C (CERDIP only) a) b) Temperature Range: = = = a) b) Package: PD JD OE OE713 = = = = Plastic DIP, (300 mil body), 14-lead Ceramic DIP, (300 mil body), 14-lead SOIC (Wide), 16-lead SOIC (Wide), 16-lead (Tape and Reel) TC4467COE: Commerical Temperature, SOIC package. TC4467CPD: Commercial Temperature, PDIP package. TC4467MJD: Military Temperature, Ceramic DIP package. TC4468COE713: Tape and Reel, Commerical Temp., SOIC package. TC4468CPD: Commercial Temperature, PDIP package. TC4469COE: Commercial Temperature, SOIC package. TC4469CPD: Commercial Temperature, PDIP package. Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2002 Microchip Technology Inc. DS21425B-page19 TC4467/TC4468/TC4469 NOTES: DS21425B-page 20 2002 Microchip Technology Inc. TC4467/TC4468/TC4469 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. 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Trademarks The Microchip name and logo, the Microchip logo, FilterLab, KEELOQ, microID, MPLAB, MXDEV, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company's quality system processes and procedures are QS-9000 compliant for its PICmicro(R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001 certified. 2002 Microchip Technology Inc. DS21425B-page 21 M WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC Corporate Office Australia 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Rocky Mountain China - Beijing 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-4338 Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. 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B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 China - Shenzhen 150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335 Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086 San Jose China - Hong Kong SAR Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 New York Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O'Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 Japan Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan Microchip Technology (Barbados) Inc., Taiwan Branch 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 EUROPE Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 France Microchip Technology SARL Parc d'Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany Microchip Technology GmbH Gustav-Heinemann Ring 125 D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 Austria Microchip Technology Austria GmbH Durisolstrasse 2 A-4600 Wels Austria Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 05/16/02 DS21425B-page 22 2002 Microchip Technology Inc.