2002 Microchip Technology Inc. DS21425B-page 1
MTC4467/TC4468/TC4469
Features
• High Peak Output Current: 1.2 A
• Wide Operating Range:
- 4.5 V to 18 V
• Symmetrical Rise/Fall Times: 25 nsec
• Short, Equal Delay Times: 75 nsec
• Latch-proof. Will Withstand 500 mA Inductive
Kickback
• 3 Input Logic Choices:
- AND / NAND / AND + Inv
• ESD Protection on All Pins: 2 kV
Applications
• General Purpose CMOS Logic Buffer
• Driving All Four MOSFETs in an H-Bridge
• Direct Small Motor Driver
• Relay or Peripheral Drivers
• CCD Driver
• Pin-Switching Network Driver
Package Types
General Description
The TC4467/TC4468/TC4469 devices are a family of
four-output CMOS buffers/MOSFET drivers with 1.2 A
peak drive capability. Unlike other MOSFET drivers,
these devices have two inputs for each output. The
inputs are configured as logic gates: NAND (TC4467),
AND (TC4468) and AND/INV (TC4469).
The TC4467/TC4468/TC4469 drivers can continuously
source up to 250 mA into ground referenced loads.
These devices are ideal for direct driving low current
motors or driving MOSFETs in a H-bridge configuration
for higher current motor drive (see Section 5.0 for
details). Having the logic gates onboard the driver can
help to reduce component count in many designs.
The TC4467/TC4468/TC4469 devices are very robust
and highly latch-up resistant. They can tolerate up to
5 V of noise spiking on the ground line and can handle
up to 0.5 A of reverse current on the driver outputs.
The TC4467/4468/4469 devices are available in
commercial, industrial and military temperature ranges.
1
2
3
4
5
6
7
8
16
13
12
11
10
9
1A
1B
2A
2B
3A
3B
GND
GND
VDD
1Y
2Y
3Y
4Y
4B
4A
VDD
15
14
TC4467
TC4468
TC4469
16-Pin SOIC (Wide)
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1A
1B
2A
2B
3A
3B
GND
VDD
1Y
2Y
3Y
4Y
4B
4A
TC4467
TC4468
TC4469
14-Pin PDIP/CERDIP
Logic-Input CMOS Quad Drivers
TC4467/TC4468/TC4469
DS21425B-page 2 2002 Microchip Technology Inc.
Logic Diagrams
TC4468TC4467
Output
TC446X
VDD
14
7
1Y
13
1
2
1B
1A
2Y
12
3
4
2B
2A
3Y
11
5
6
3B
3A
4Y
10
8
9
4B
4A
GND
TC4469
14
7
1Y
13
1
2
1B
1A
2Y
12
3
4
2B
2A
3Y
11
5
6
3B
3A
4Y
10
8
9
4B
4A
14
7
1Y
13
1
2
1B
1A
2Y
12
3
4
2B
2A
3Y
11
5
6
3B
3A
4Y
10
8
9
4B
4A
GND
VDD VDD VDD
6
GND
2002 Microchip Technology Inc. DS21425B-page 3
TC4467/TC4468/TC4469
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage ...............................................................+20 V
Input Voltage ............................. (GND – 5 V) to (VDD + 0.3 V)
Package Power Dissipation: (TA ≤ 70°C)
PDIP...................................................................800 mW
CERDIP .............................................................840 mW
SOIC ..................................................................760 mW
Package Thermal Resistance:
CERDIP RθJ-A ...................................................100°C/W
CERDIP RθJ-C.....................................................23°C/W
PDIP RθJ-A ..........................................................80°C/W
PDIP RθJ-C ..........................................................35°C/W
SOIC RθJ-A ..........................................................95°C/W
SOIC RθJ-C..........................................................28°C/W
Operating Temperature Range:
C Version ................................................... 0°C to +70°C
E Version.................................................-40°C to +85°C
M Version ..............................................-55°C to +125°C
Maximum Chip Temperature....................................... +150°C
Storage Temperature Range.........................-65°C to +150°C
†Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, TA = +25°C, with 4.5 V ≤ VDD ≤ 18 V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic 1, High Input Voltage VIH 2.4 — VDD VNote 3
Logic 0, Low Input Voltage VIL ——0.8VNote 3
Input Current IIN -1.0 — +1.0 µA 0 V ≤ VIN ≤ VDD
Output
High Output Voltage VOH VDD – 0.025 — — V ILOAD = 100 µA (Note 1)
Low Output Voltage VOL — — 0.15 V ILOAD = 10 mA (Note 1)
Output Resistance RO—1015ΩIOUT = 10 mA, VDD = 18 V
Peak Output Current IPK —1.2—A
Continuous Output Current IDC — — 300 mA Single Output
— — 500 Total Package
Latch-Up Protection Withstand
Reverse Current
I—500—mA4.5V ≤ VDD ≤ 16 V
Switching Time (Note 1)
Rise Time tR— 15 25 nsec Figure 4-1
Fall Time tF— 15 25 nsec Figure 4-1
Delay Time tD1 — 40 75 nsec Figure 4-1
Delay Time tD2 — 40 75 nsec Figure 4-1
Power Supply
Power Supply Current IS—1.54mA
Power Supply Voltage VDD 4.5 — 18 V Note 2
Note 1: Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
2: When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt
will cause high-power dissipation in the device.
3: The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5µsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
TC4467/TC4468/TC4469
DS21425B-page 4 2002 Microchip Technology Inc.
ELECTRICAL SPECIFICATIONS (OPERATING TEMPERATURES)
TRUTH TABLE
Electrical Characteristics: Unless otherwise noted, over operating temperature range with 4.5 V ≤ VDD ≤ 18 V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic 1, High Input Voltage VIH 2.4 — — V Note 3
Logic 0, Low Input Voltage VIL ——0.8VNote 3
Input Current IIN -10 — 10 µA 0 V ≤ VIN ≤ VDD
Output
High Output Voltage VOH VDD – 0.025 — — V ILOAD = 100 µA (Note 1)
Low Output Voltage VOL — — 0.30 V ILOAD = 10 mA (Note 1)
Output Resistance RO—2030ΩIOUT = 10 mA, VDD = 18 V
Peak Output Current IPK —1.2—A
Continuous Output Current IDC — — 300 mA Single Output
— — 500 Total Package
Latch-Up Protection Withstand
Reverse Current
I—500—mA4.5V ≤ VDD ≤ 16 V
Switching Time (Note 1)
Rise Time tR— 15 50 nsec Figure 4-1
Fall Time tF— 15 50 nsec Figure 4-1
Delay Time tD1 — 40 100 nsec Figure 4-1
Delay Time tD2 — 40 100 nsec Figure 4-1
Power Supply
Power Supply Current IS——8mA
Power Supply Voltage VDD 4.5 — 18 V Note 2
Note 1: Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
2: When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt
will cause high-power dissipation in the device.
3: The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
Part No. TC4467 NAND TC4468 AND TC4469 AND/INV
Inputs A H H L L H H L L H H L L
Inputs B HLHLHLHLHLHL
Outputs TC446X L H H H H L L L L H L L
Legend: H = High L = Low
2002 Microchip Technology Inc. DS21425B-page 5
TC4467/TC4468/TC4469
2.0 TYPICAL PERFORMANCE CURVES
Note: TA = +25°C, with 4.5 V ≤ VDD ≤ 18 V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Rise/Fall Times vs.
Temperature.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-6: Propagation Delay Time vs.
Supply Voltage.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
14
0
12
0
1
00
80
60
4
0
2
0
0
3
5
9
11
1
3
1
5
17
1
9
2200 pF
0
p
p
1600
pF
1000
pF
470
pF
100
pF
t
R
I
SE
(
nsec
)
V
SU
PPL
Y
(
V
)
14
0
12
0
1
00
80
60
4
0
2
0
0
1
00
1
000
10
,
00
0
10 V
15 V
V
V
V
5
V
t
R
I
SE
(
nsec
)
C
L
O
A
D
(
pF
)
0
-
50
TIME
(
nsec
)
5
1
0
1
5
2
0
2
5
-2
5
0
2
5
50
7
5
1
00
12
5
t
FALL
tRISE
V
SU
PPL
Y
= 17.
5
V
C
L
O
A
D
= 470
pF
TEMPERATURE
(
°
C
)
14
0
12
0
1
00
80
60
4
0
2
0
0
3
5
7
9
11
1
3
1
5
17
1
9
p
100
pF
470
pF
1000
pF
1500
p
F
2200
pF
t
FALL
(
nsec
)
V
SU
PPL
Y
(V
)
14
0
12
0
1
00
80
60
4
0
2
0
0
100
0
0
1
000
10
,
00
0
V
V
V
5
V
10 V
15 V
t
FALL
(
nsec
)
C
L
O
A
D
(
pF
)
0
4
D
ELAY TIME
(
nsec
)
2
0
4
0
60
80
8
1
2
14
1
6
1
8
6
1
0
V
SU
PPL
Y
(
V
)
t
t
D1
t
D2
C
C
L
O
A
D
4
70
pF
=
4
TC4467/TC4468/TC4469
DS21425B-page 6 2002 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: TA = +25°C, with 4.5 V ≤ VDD ≤ 18 V.
FIGURE 2-7: Input Amplitude vs. Delay
Times.
FIGURE 2-8: Quiescent Supply Current
vs. Supply Voltage.
FIGURE 2-9: High-State Output
Resistance.
FIGURE 2-10: Propagation Delay Times
vs. Temperatures.
FIGURE 2-11: Quiescent Supply Current
vs. Temperature.
FIGURE 2-12: Low-State Output
Resistance.
14
0
12
0
1
00
80
60
4
0
2
0
0
1
9
1
0
D
ELAY TIME
(
nsec
)
2
3
4
5
6
7
8
INP
U
T FALLIN
G
INP
U
T RI
S
IN
G
V
DRIVE
(
V
)
t
D1
tD2
V
DD
V
=
12 V
0
4
0
.
5
1.
0
1.
5
2.
0
2.
5
6
8
1
0
12
14
1
6
1
8
OU
TP
U
T
S
=
1
OUTPUTS = 0
V
SU
PPL
Y
(V
)
I
Q
UIESCENT
(
mA
)
0
4
6
8
1
0
12
14
1
6
1
8
V
SU
PPL
Y
(
V
)
5
1
0
1
5
2
0
2
5
30
35
R
D
S
(
ON
)
(
Ω
)
T
J
= +1
50
°
C
TJ = +25°C
7
0
2
0
1
00
12
0
D
ELAY TIME
(
nsec
)
-4
0
-2
0
0
2
0
4
0
60
80
30
4
0
50
60
-
60
°
C
)
V
DD
= 17.
5
V
= 470
pF
V
IN
t
D1
tD2
3
.
5
0
1
00
12
0
-4
0
-2
0
0
2
0
4
0
60
80
3
.
0
2.
5
2.
0
1.
5
1.
0
0
.
5
OU
TP
U
T
S
=
1
OUTPUTS = 0
-
60
I
Q
UIESCENT
(mA)
T
J
U
N
C
TI
ON
(
°
C
)
V
V
DD
= 17.
5
V
0
4
6
8
1
0
12
1
4
1
6
1
8
5
1
0
1
5
2
0
2
5
30
35
V
SU
PPL
Y
(
V
)
R
D
S
(
ON
)
(
Ω
)
TJ = +150°
C
T
J
= +2
5
°
C
2002 Microchip Technology Inc. DS21425B-page 7
TC4467/TC4468/TC4469
2.0 TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: (Load on single output only).
FIGURE 2-13: Supply Current vs.
Capacitive Load.
FIGURE 2-14: Supply Current vs.
Capacitive Load.
FIGURE 2-15: Supply Current vs.
Capacitive Load.
FIGURE 2-16: Supply Current vs.
Frequency.
FIGURE 2-17: Supply Current vs.
Frequency.
FIGURE 2-18: Supply Current vs.
Frequency.
60
0
1
00
1
000
10
,
00
0
50
4
0
30
2
0
1
0
2MH
Hz
1 MHz
1 MHz
1MH
50
00
kH
z
2
00
kH
z
2
0
kH
z
I
SU
PPLY
(
mA
)
C
L
O
A
D
(
pF
)
V
DD
= 1
8
V
60
0
1
00
1
000
10
,
00
0
50
4
0
30
2
0
1
0
2MHz
2MHz
1 MHz
5
00
kH
z
2
00
kH
z
2
0
kH
z
C
L
O
A
D
(
pF
)
I
SU
PPLY
(
mA
)
V
DD
V
=
12 V
60
50
4
0
30
2
0
1
0
0
1
00
1
000
10
,
00
0
1 MHz
500
kH
z
2
00
kH
z
2
0
kH
z
2 MHz
I
SU
PPLY
(
mA
)
C
L
O
A
D
(p
F
)
V
V
DD
V
=
6
V
60
0
1
00
1
000
FREQUENCY
(
kHz
)
50
4
0
30
2
0
1
0
2200
pF
1
1
000
pF
p
100
pF
1
0
10
,
00
0
V
DD
= 1
8
V
I
SU
PPLY
(
mA
)
60
0
1
0
1
00
FREQUENCY
(
kHz
)
50
4
0
30
2
0
1
0
1
000
2200
pF
p
p
1000
pF
100
pF
10
,
00
0
I
SU
PPLY
(
mA
)
V
DD
V
=
12 V
60
0
1
0
1
000
1
00
FREQUENCY
(
kHz
)
50
4
0
30
2
0
1
0
2200
pF
1000
pF
100
pF
10
,
00
0
I
SU
PPLY
(
mA
)
V
V
DD
=
6
V
TC4467/TC4468/TC4469
DS21425B-page 8 2002 Microchip Technology Inc.
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
14-Pin PDIP,
CERDIP
16-Pin SOIC
(Wide) Description
Symbol Symbol
1A 1A Input A for Driver 1, TTL/CMOS Compatible Input
1B 1B Input B for Driver 1, TTL/CMOS Compatible Input
2A 2A Input A for Driver 2, TTL/CMOS Compatible Input
2B 2B Input B for Driver 2, TTL/CMOS Compatible Input
3A 3A Input A for Driver 3, TTL/CMOS Compatible Input
3B 3B Input B for Driver 3, TTL/CMOS Compatible Input
GND GND Ground
— GND Ground
4A 4A Input A for Driver 4, TTL/CMOS Compatible Input
4B 4B Input B for Driver 4, TTL/CMOS Compatible Input
4Y 4Y Output for Driver 4, CMOS Push-Pull Output
3Y 3Y Output for Driver 3, CMOS Push-Pull Output
2Y 2Y Output for Driver 2, CMOS Push-Pull Output
1Y 1Y Output for Driver 1, CMOS Push-Pull Output
VDD VDD Supply Input, 4.5 V to 18 V
—V
DD Supply Input, 4.5 V to 18 V
2002 Microchip Technology Inc. DS21425B-page 9
TC4467/TC4468/TC4469
4.0 DETAILED DESCRIPTION
4.1 Supply Bypassing
Large currents are required to charge and discharge
large capacitive loads quickly. For example, charging a
1000 pF load to 18 V in 25 nsec requires 0.72 A from
the device's power supply.
To ensure low supply impedance over a wide frequency
range, a 1 µF film capacitor in parallel with one or two
low-inductance, 0.1 µF ceramic disk capacitors with
short lead lengths (<0.5 in.) normally provide adequate
bypassing.
4.2 Grounding
The TC4467 and TC4469 contain inverting drivers.
Potential drops developed in common ground
impedances from input to output will appear as
negative feedback and degrade switching speed
characteristics. Instead, individual ground returns for
input and output circuits, or a ground plane, should be
used.
4.3 Input Stage
The input voltage level changes the no-load or
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 2.5 mA current source
load. With logic “0” outputs, maximum quiescent supply
current is 4 mA. Logic “1” output level signals reduce
quiescent current to 1.4 mA, maximum. Unused driver
inputs must be connected to VDD or VSS. Minimum
power dissipation occurs for logic “1” outputs.
The drivers are designed with 50 mV of hysteresis,
which provides clean transitions and minimizes output
stage current spiking when changing states. Input volt-
age thresholds are approximately 1.5 V, making any
voltage greater than 1.5 V, up to VDD, a logic “1” input.
Input current is less than 1 µA over this range.
4.4 Power Dissipation
The supply current versus frequency and supply
current versus capacitive load characteristic curves will
aid in determining power dissipation calculations.
Microchip Technology's CMOS drivers have greatly
reduced quiescent DC power consumption.
Input signal duty cycle, power supply voltage and load
type influence package power dissipation. Given power
dissipation and package thermal resistance, the maxi-
mum ambient operating temperature is easily
calculated. The 14-pin plastic package junction-to-
ambient thermal resistance is 83.3°C/W. At +70°C, the
package is rated at 800 mW maximum dissipation.
Maximum allowable chip temperature is +150°C.
Three components make up total package power
dissipation:
1. Load-caused dissipation (PL).
2. Quiescent power (PQ).
3. Transition power (PT).
A capacitive-load-caused dissipation (driving MOSFET
gates), is a direct function of frequency, capacitive load
and supply voltage. The power dissipation is:
EQUATION
A resistive-load-caused dissipation for ground-
referenced loads is a function of duty cycle, load
current and load voltage. The power dissipation is:
EQUATION
PLfCVS
2
=
VSSupply Voltage=
C Capacitive Load=
f Switching Frequency=
PLDV
SVL
–()IL
=
ILLoad Current=
DDuty Cycle=
VSSupply Voltage=
VLLoad Voltage=
TC4467/TC4468/TC4469
DS21425B-page 10 2002 Microchip Technology Inc.
A resistive-load-caused dissipation for supply-
referenced loads is a function of duty cycle, load
current and output voltage. The power dissipation is
EQUATION
Quiescent power dissipation depends on input signal
duty cycle. Logic HIGH outputs result in a lower power
dissipation mode, with only 0.6 mA total current drain
(all devices driven). Logic LOW outputs raise the
current to 4 mA maximum. The quiescent power
dissipation is:
EQUATION
Transition power dissipation arises in the complimen-
tary configuration (TC446X) because the output stage
N-channel and P-channel MOS transistors are ON
simultaneously for a very short period when the output
changes. The transition power dissipation is
approximately:
EQUATION
Package power dissipation is the sum of load,
quiescent and transition power dissipations. An
example shows the relative magnitude for each term:
Maximum operating temperature is:
EQUATION
FIGURE 4-1: Switching Time Test Circuit.
PLDVOIL
=
ILLoad Current=
VODevice Output Voltage=
DDuty Cycle=
PQVSDI
H
() 1D–()IL
+()=
ILQuiescent Current with all outputs HIGH=
IHQuiescent Current with all outputs LOW=
DDuty Cycle=
VSSupply Voltage=
(4 mA max.)
(0.6 mA max.)
Note: Ambient operating temperature should not
exceed +85°C for "EJD" device or +125°C
for "MJD" device.
PTfVs10 10 9–
×()=
VS15 V=
C 1000 pF Capacitive Load=
D 50%=
f200kHz=
PDPackage Power Dissipation=
PLPQPT
++=
45mW 35mW 30mW++=
110mW=
TJθJA PD
()–141°C=
θJA Junction-to-ambient thernal resistance=
TJMaximum allowable junction temperature=
(+150°C)
(83.3°C/W) 14-pin plastic package
VOUT
470 pF
1B
1A
2B
2A
3B
3A
4B
4A
1 µF Film 0.1 µF Ceramic
90%
10%
10% 10%
90%
+5 V
Input
(A, B)
VDD
Output
0V
0V
90%
1
2
3
4
5
6
8
9
7
10
11
12
13
14
VDD
tR
tD1 tF
tD2
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 nsec
2002 Microchip Technology Inc. DS21425B-page 11
TC4467/TC4468/TC4469
5.0 APPLICATIONS INFORMATION
FIGURE 5-1: Stepper Motor Drive.
FIGURE 5-2: Quad Driver For H-bridge Motor Control.
+12 V
14
TC4469
13
12
11
10
7
9
8
6
5
4
3
2
1Red
Gray
Yel
Blk
Motor
B
A
Airpax
#M82102-P2
7.5/Step
5
13
+5 V to +15 V
14
TC4469
Direction
PWM Speed
18 V
Fwd
13
12
11
10
7
9
8
6
5
4
3
2
1
Rev
Motor
M
TC4467/TC4468/TC4469
DS21425B-page 12 2002 Microchip Technology Inc.
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
14-Lead PDIP (300 mil) Example:
14-Lead CERDIP (300 mil) Example:
Legend: XX...X Customer specific information*
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
*Standard OTP marking consists of Microchip part number, year code, week code, facility code, mask
rev#, and assembly code.
16-Lead SOIC (300 mil) Example:
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
XXXXXXXXXXX YYWWNNN
TC4469COE
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
TC4467CPD
YYWWNNN
TC4468EJD
YYWWNNN
2002 Microchip Technology Inc. DS21425B-page 13
TC4467/TC4468/TC4469
14-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
n
D
1
2
eB
β
E
c
A
A1
B
B1
L
A2
p
α
Units INCHES* MILLIMETERS
Dimension Limits MIN NOM MAX MIN NOM MAX
Number of Pins n14 14
Pitch p.100 2.54
Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32
Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68
Base to Seating Plane A1 .015 0.38
Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26
Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60
Overall Length D .740 .750 .760 18.80 19.05 19.30
Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43
Lead Thickness c.008 .012 .015 0.20 0.29 0.38
Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78
Lower Lead Width B .014 .018 .022 0.36 0.46 0.56
Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92
Mold Draft Angle Top α5 10 15 5 10 15
β5 10 15 5 10 15
Mold Draft Angle Bottom
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-005
§ Significant Characteristic
TC4467/TC4468/TC4469
DS21425B-page 14 2002 Microchip Technology Inc.
14-Lead Ceramic Dual In-line – 300 mil (CERDIP)
.780 (19.81)
.740 (18.80)
.300 (7.62)
.230 (5.84)
.200 (5.08)
.160 (4.06)
.200 (5.08)
.125 (3.18)
.110 (2.79)
.090 (2.29)
.065 (1.65)
.045 (1.14)
.020 (0.51)
.016 (0.41)
.040 (1.02)
.020 (0.51)
.098 (2.49) MAX.
.030 (0.76) MIN.
14-Pin CERDIP (Narrow)
.400 (10.16)
.320 (8.13)
.015 (0.38)
.008 (0.20)
3° MIN.
PIN 1
.320 (8.13)
.290 (7.37)
.150 (3.81)
MIN.
Dimensions: inches (mm)
2002 Microchip Technology Inc. DS21425B-page 15
TC4467/TC4468/TC4469
16-Lead Plastic Small Outline (SO) – Wide, 300 mil (SOIC)
Foot Angle φ048048
1512015120
β
Mold Draft Angle Bottom
1512015120
α
Mold Draft Angle Top
0.510.420.36.020.017.014BLead Width
0.330.280.23.013.011.009
c
Lead Thickness
1.270.840.41.050.033.016LFoot Length
0.740.500.25.029.020.010hChamfer Distance
10.4910.3010.10.413.406.398DOverall Length
7.597.497.39.299.295.291E1Molded Package Width
10.6710.3410.01.420.407.394EOverall Width
0.300.200.10.012.008.004A1Standoff §
2.392.312.24.094.091.088A2Molded Package Thickness
2.642.502.36.104.099.093AOverall Height
1.27.050
p
Pitch
1616
n
Number of Pins
MAXNOMMINMAXNOMMINDimension Limits
MILLIMETERSINCHES*Units
L
β
c
φ
h
45°
1
2
D
p
n
B
E1
E
α
A2
A1
A
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-013
Drawing No. C04-102
§ Significant Characteristic
TC4467/TC4468/TC4469
DS21425B-page 16 2002 Microchip Technology Inc.
NOTES:
2002 Microchip Technology Inc. DS21425B-page17
TC4467/TC4468/TC4469
ON-LINE SUPPORT
Microchip provides on-line support on the Microchip
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The web site is used by Microchip as a means to make
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Connecting to the Microchip Internet Web Site
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The file transfer site is available by using an FTP ser-
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The web site and file transfer site provide a variety of
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available for consideration is:
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The Systems Information and Upgrade Line provides
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Plus, this line provides information on how customers
can receive any currently available upgrade kits.The
Hot Line Numbers are:
1-800-755-2345 for U.S. and most of Canada, and
1-480-792-7302 for the rest of the world.
013001
TC4467/TC4468/TC4469
DS21425B-page18 2002 Microchip Technology Inc.
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod-
uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation
can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this Data Sheet.
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To : Technical Publications Manager
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DS21425B
TC4467/TC4468/TC4469
2002 Microchip Technology Inc. DS21425B-page19
TC4467/TC4468/TC4469
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
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Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
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PART NO. XXX
PackageTemperature
Range
Device
Device: TC4467: 1.2A Quad MOSFET Driver, NAND
TC4468: 1.2A Quad MOSFET Driver, AND
TC4469: 1.2A Quad MOSFET Driver, AND/INV
Temperature Range: C = 0°C to +70°C
E= -40°C to +85°C (CERDIP only)
M= -55°C to +125°C (CERDIP only)
Package: PD = Plastic DIP, (300 mil body), 14-lead
JD = Ceramic DIP, (300 mil body), 14-lead
OE = SOIC (Wide), 16-lead
OE713 = SOIC (Wide), 16-lead (Tape and Reel)
Examples:
a) TC4467COE: Commerical Temperature,
SOIC package.
b) TC4467CPD: Commercial Temperature,
PDIP package.
c) TC4467MJD: Military Temperature,
Ceramic DIP package.
a) TC4468COE713: Tape and Reel,
Commerical Temp., SOIC package.
b) TC4468CPD: Commercial Temperature,
PDIP package.
a) TC4469COE: Commercial Temperature,
SOIC package.
b) TC4469CPD: Commercial Temperature,
PDIP package.
TC4467/TC4468/TC4469
DS21425B-page 20 2002 Microchip Technology Inc.
NOTES:
2002 Microchip Technology Inc. DS21425B-page 21
TC4467/TC4468/TC4469
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
KEELOQ, microID, MPLAB, MXDEV, PIC, PICmicro,
PICMASTER, PICSTART, PRO MATE, SEEVAL and The
Embedded Control Solutions Company are registered trade-
marks of Microchip Technology Incorporated in the U.S.A. and
other countries.
dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense,
FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,
ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,
MPLINK, MPSIM, MXLAB, PICC, PICDEM, PICDEM.net,
rfPIC, Select Mode and Total Endurance are trademarks of
Microchip Technology Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
DS21425B-page 22 2002 Microchip Technology Inc.
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