
V = -5V, I = -10mA
V = -5V, I = -2.0mA
I = 1.0uA
I = 10uA, V = 0
www.panjit.com
3/5/2009 Page 2
NPN ELECTRICAL CHARACTERISTICS (Note 2) T = 25°C Unless otherwise noted
J
C
Parameter Symbol Min Units
Collector-Emitter Breakdown Voltag
Conditions Typ Max
V(BR)CEO 45 - - V
C
50 - - V
EB 50 - - V
C
Note 2. Short duration test pulse used to minimize self-heating
V(BR)CES
(BR)CBO
V
Collector-Emitter Breakdown Voltag
Collector-Base Breakdown Voltag
I = 10mA
I = 10uA
E
Emitter-Base Breakdown Voltage (BR)EBO
V
V = 30V, I = 0
E
- - 15 nA
CB
ICBO
Collector Cutoff Current
6.0 - - V
--5uAT =150°C
J
V = 5V, I = 0
EB C
Emitter Cutoff Current IEBO
DC Current Gain hFE
- - 100 nA
- - 0.1 V
- - 0.4 V
V = 5V, I = 2.0mA
CE C200 - 450 -
Collector-Emitter Saturation Voltag
CE(SAT)
VI = 10mA, I = 0.5mA
CB
I = 100mA, I = 5mA
CB
Base-Emitter Saturation Voltage BE(SAT)
VBC
I = 10mA, I = 0.5mA - 0.75 - V
Base-Emitter Voltage BE
V 0.58 - 0.7 V
C
CE
V = 5V, I = 2.0mA
Gain-Bandwidth Product T
f100 - - MHz
Collector-Base Capacitance CBO
C - - 1.5 pF
CB
V = 10V, f =1.0MHz
C
V = 5V, I = 10mA
CE
f = 100MHz
Emitter-Base Capacitance EBO
C-7-pF
EB
V = 0.5V, f =1.0MHz
BC847BPN
PNP ELECTRICAL CHARACTERISTICS (Note 2) T = 25°C Unless otherwise noted
J
I = -1.0uA
I = -10uA, V = 0
C
Parameter Symbol Min Units
Collector-Emitter Breakdown Voltag
Conditions Typ Max
V(BR)CEO -45 - - V
C
-50 - - V
EB -50 - - V
C
V(BR)CES
(BR)CBO
V
Collector-Emitter Breakdown Voltag
Collector-Base Breakdown Voltag
I = -10mA
I = -10uA
E
Emitter-Base Breakdown Voltage (BR)EBO
V
V = -30V, I = 0
E
- - -15 nA
CB
ICBO
Collector Cutoff Current
-5.0 - - V
- - -4.0 uAT =150°C
J
V = -5V, I = 0
EB C
Emitter Cutoff Current IEBO
DC Current Gain hFE
- - -100 nA
- - -0.3 V
- - -0.65 V
V = -5V, I = -2.0mA
CE C200 - 475
Collector-Emitter Saturation Voltag
CE(SAT)
VI = -10mA, I = -0.5mA
CB
I = -100mA, I = -5mA
CB
Base-Emitter Saturation Voltage BE(SAT)
VC
I = -10mA, I = -0.5mA - -0.7 - V
Base-Emitter Voltage BE
V -0.6 - -0.75 V
C
CE
Gain-Bandwidth Product T
f100 - - MHz
Collector-Base Capacitance CBO
C - - 4.5 pF
CB
V = -10V, f =1.0MHz
C
CE
f = 100MHz
Emitter-Base Capacitance EBO
C - 11 - pF
EB
V = -0.5V, f =1.0MHz
B