05/2011
AWT6307R
HELP2TM Cellular CDMA 3.4 V/28 dBm
Linear Power Amplier Module
Data Sheet - Rev 2.2
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
FEATURES
• InGaP HBT Technology
• High Efciency:
• 40 % @ +28 dBm output
• 21 % @ +16 dBm output
• Low Quiescent Current: 15 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Internal Voltage Regulation
• Optimized for a 50 Ω System
• Low Prole Surface Mount Package: 1 mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
• RoHS Compliant Package, 250 oC MSL-3
• Suitable for BC10 (806-824 MHz) applications
APPLICATIONS
• CDMA/EVDO Cell-band Wireless Handsets and
Data Devices
PRODUCT DESCRIPTION
The AWT6307R meets the increasing demands
for higher efciency and smaller footprint in CDMA
1X handsets. The package pinout was chosen to
enable handset manufacturers to switch from a
4 mm x 4 mm PA module with few layout changes
while reducing board area requirements by 44 %.
The AWT6307R uses ANADIGICS’ exclusive InGaP-
Plus™ technology, which combines HBT and pHEMT
devices on the same die, to enable state-of-the-art
reliability, temperature stability, and ruggedness. The
AWT6307R is part of ANADIGICS’ High-Efciency-
at-Low-Power (HELP™) family of CDMA power
ampliers, which deliver low quiescent currents and
signicantly greater efciency without a costly external
DAC or DC-DC converter. Through selectable bias
modes, the AWT6307 achieves optimal efciency
across different output power levels, specifically
at low- and mid-range power levels where the PA
typically operates, thereby dramatically increasing
handset talk-time and standby-time. Its built-in
voltage regulator eliminates the need for external
voltage regulation components. The 3 mm x 3 mm x
1 mm surface mount package incorporates matching
networks optimized for output power, efciency and
linearity in a 50 Ω system. Figure 1: Block Diagram
Bias Control
VBATT
VEN
RFIN
RFOU
GND
VMODE
1
7
8
6
GND at slug (pad)
3
4
2
VCC
GND
5