DSEP2x91-06A HiPerFRED VRRM = I FAV = 2x 90 A t rr = 35 ns 600 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DSEP2x91-06A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160920b DSEP2x91-06A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C 600 V IR reverse current, drain current VF forward voltage drop min. typ. VR = 600 V TVJ = 25C 1 mA VR = 600 V TVJ = 150C 4 mA IF = TVJ = 25C 2.05 V 2.35 V 1.39 V 90 A I F = 180 A IF = TVJ = 150 C 90 A I F = 180 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case max. Unit 600 V TC = 60 C rectangular 1.72 V T VJ = 150 C 90 A TVJ = 150 C 1.08 V 3.4 m d = 0.5 for power loss calculation only 0.6 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C 107 pF I RM max. reverse recovery current TVJ = 25 C 18 A TVJ = 100 C 30 A t rr reverse recovery time TVJ = 25 C 30 ns TVJ = 100 C 100 ns 0.10 TC = 25C IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 90 A; VR = 300 V -di F /dt = 600 A/s Data according to IEC 60747and per semiconductor unless otherwise specified 200 W 1.00 kA 20160920b DSEP2x91-06A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 100 Unit A -40 150 C -40 125 C 150 C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Part No. Logo XXXXX (R) Zyyww abcd Assembly Line DateCode Ordering Standard Assembly Code Ordering Number DSEP2x91-06A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP2x91-06A * on die level Delivery Mode Tube Code No. 476277 T VJ = 150 C Fast Diode V 0 max threshold voltage 1.08 V R0 max slope resistance * 2.4 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20160920b DSEP2x91-06A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160920b DSEP2x91-06A Fast Diode 150 3.0 125 60 2.5 100 VR = 300 V VR = 300 V 2.0 IF [nC] 50 1.0 25 0.5 0 0 1 IRM IF = 180 A 90 A 45 A 1.5 100C 25C [A] 40 Qr TVJ = 150C 75 20 0 1000 VF [V] Fig. 1 Forward current IF versus VF 0 600 800 1000 Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current IRM versus -diF /dt 20 TVJ = 100C 1.2 TVJ = 100C VR = 300 V 140 IF = 90 A 1.5 IF = 180 A 90 A 45 A 130 trr 120 15 0.9 10 0.6 VFR tfr [s] [V] [ns] 110 IRM 5 0.3 0.0 90 40 80 120 160 tfr VFR 100 Qr 0 400 -diF /dt [A/s] 150 Kf 1.0 200 -diF /dt [A/s] Qr versus -diF /dt 2.0 0.5 IF = 180 A 90 A 45 A [A] 0.0 100 2 TVJ = 100C TVJ = 100C 0 0 200 400 600 800 1000 0 200 Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 600 800 0.0 1000 -diF /dt [A/s] -diF /dt [A/s] TVJ [C] 400 Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1 0.1 Constants for ZthJC calculation: ZthJC 0.01 i Rthi (K/W) ti (s) 1 0.212 0.0055 [K/W] 2 0.248 0.0092 0.001 3 0.063 0.0007 4 0.077 0.0391 0.0001 0.00001 DSEP 2x91-06A 0.0001 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160920b