BAV23C www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES * Silicon epitaxial planar diode 3 * Fast switching dual diode with common cathode * AEC-Q101 qualified available 1 * Base P/N-E3 - RoHS-compliant, commercial grade 2 * Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified 18108_1 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART BAV23C ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS Common cathode KT6 Tape and reel SYMBOL VALUE UNIT VR 200 V VRRM 250 V IFSM 9 A BAV23C-E3-08 or BAV23C-E3-18 BAV23C-HE3-08 or BAV23C-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Continuous reverse voltage Repetitive peak reverse voltage Non-repetitive peak forward current t = 1 s Non-repetitive peak forward surge current t=1s IFSM 0.5 A IF(AV) 200 mA IF 400 mA Repetitive peak forward current IFRM 625 mA Power dissipation (2) Ptot 350 mW SYMBOL VALUE UNIT RthJA 357 K/W Maximum average forward rectified current (1) Forward continuous current (2) Notes (1) Measured under pulse conditions; pulse time = t 0.3 ms p (2) Device on fiberglass substrate THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air (1) TEST CONDITION Tj 150 C Storage temperature range Tstg -65 to +150 C Operating temperature range Top -55 to +150 C Junction temperature Note (1) Device on fiberglass substrate Rev. 1.5, 13-Feb-18 Document Number: 81902 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV23C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Reverse breakdown voltage TEST CONDITION SYMBOL MIN. IR = 100 A, tp = 300 ms V(BR) 250 IF = 100 mA VF 1 IF = 200 mA VF 1.25 V VR = 200 V IR 100 nA VR = 200 V, Tj = 150 C IR 100 A IF = 10 mA rf VR = 0 V, f = 1 MHz CD 5 pF IF = IR = 30 mA, RL = 100 iR = 3 mA trr 50 ns Forward voltage Reverse current Dynamic forward resistance Diode capacitance Reverse recovery time TYP. MAX. UNIT V V 5 500 450 400 Ptot (mW) 350 300 250 200 150 100 50 0 0 50 100 150 Tamb (C) Fig. 1 - Ptot - Admissible Power Dissipation vs. Ambient Temperature 100 IFSM (A) 10 1 Tj = 25 C - prior to surge 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 Test pulse tp (s) Fig. 2 - IFSM - Non-Repetitive Peak Forward Current vs. Pulse Duration - Maximum Admissible Values of Square Pulses Rev. 1.5, 13-Feb-18 Document Number: 81902 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV23C www.vishay.com Vishay Semiconductors 1.0E+0 100.0E-3 Tamb = 150 C 10.0E-3 IF (A) Tamb = 125 C Tamb = 100 C 1.0E-3 Tamb = 75 C Tamb = 50 C 100.0E-6 Tamb = 25 C 10.0E-6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF (V) Fig. 3 - VF - Typical Forward Current vs. Forward Voltage vs. Various Temperatures 1.00E-03 1.00E-04 Tamb = 150 C 1.00E-05 Tamb = 125 C IR (A) Tamb = 100 C 1.00E-06 Tamb = 75 C Tamb = 50 C 1.00E-07 Tamb = 25 C 1.00E-08 1.00E-09 0 50 100 150 200 250 300 VR (V) Fig. 4 - IR - Typical Reverse Current vs. Reverse Voltage vs. Various Temperatures Rev. 1.5, 13-Feb-18 Document Number: 81902 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV23C www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 0 t o8 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.5 (0.020) 0.45 (0.018) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Rev. 1.5, 13-Feb-18 Document Number: 81902 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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